Tongbo Wei

Summary

Publications

  1. doi request reprint Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
    Tongbo Wei
    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
    Opt Express 19:1065-71. 2011
  2. doi request reprint Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface
    Bo Sun
    State Key Laboratory of Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    Opt Express 20:18537-44. 2012
  3. doi request reprint Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes
    Yiyun Zhang
    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    Opt Express 20:6808-15. 2012
  4. doi request reprint Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography
    Zhuo Xiong
    Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
    Nanotechnology . 2017
  5. pmc Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy
    Tongbo Wei
    State Key Laboratory of Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
    Sci Rep 6:28620. 2016

Collaborators

  • Guodong Yuan
  • Bo Sun
  • Zhuo Xiong
  • Jinmin Li
  • Yiyun Zhang
  • Zhiqiang Liu
  • Yonghui Zhang
  • Xiang Zhang
  • Junxi Wang
  • Chao Yang
  • Xiangyang Song
  • Guohong Wang
  • Hua Yang
  • Haizhong Xie
  • Haiyang Zheng
  • Jing Li
  • Xiaoyan Yi

Detail Information

Publications6

  1. doi request reprint Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
    Tongbo Wei
    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
    Opt Express 19:1065-71. 2011
    ..3%, respectively. Additionally, the extraction enhancement factor can be further improved by increasing the size of CsCl nano-island. The economic and rapid method puts forward great potential for high performance lighting devices...
  2. doi request reprint Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface
    Bo Sun
    State Key Laboratory of Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    Opt Express 20:18537-44. 2012
    ....
  3. doi request reprint Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes
    Yiyun Zhang
    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    Opt Express 20:6808-15. 2012
    ..Numerical simulation results show that the multi-LSD process has little thermal damages to the multiple quantum wells (MQWs) of the LEDs...
  4. doi request reprint Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography
    Zhuo Xiong
    Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
    Nanotechnology . 2017
    ..In addition, a broad yellow emission in photoluminescence and cathodoluminescence spectra were observed. This phenomena showed the potential of nanopyramid light-emitting diodes to realize long wavelength visible emissions...
  5. pmc Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy
    Tongbo Wei
    State Key Laboratory of Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
    Sci Rep 6:28620. 2016
    ..It is expected that the efficient, low cost and mass-producible technique may enable new applications for CNTs in nitride optoelectronic fields. ..