David A B Miller

Summary

Affiliation: Stanford University
Country: USA

Publications

  1. doi How complicated must an optical component be?
    David A B Miller
    Ginzton Laboratory, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305, USA
    J Opt Soc Am A Opt Image Sci Vis 30:238-51. 2013
  2. doi All linear optical devices are mode converters
    David A B Miller
    Ginzton Laboratory, Stanford University, 348 Via Pueblo Mall, Stanford, CA 94305 4088, USA
    Opt Express 20:23985-93. 2012
  3. doi Energy consumption in optical modulators for interconnects
    David A B Miller
    Ginzton Laboratory, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 4088, USA
    Opt Express 20:A293-308. 2012
  4. ncbi Communicating with waves between volumes: evaluating orthogonal spatial channels and limits on coupling strengths
    D A Miller
    Ginzton Laboratory, 450 Via Palou, Stanford University, Stanford, California 94305 4085, USA
    Appl Opt 39:1681-99. 2000
  5. doi Optical interconnects to electronic chips
    David A B Miller
    Ginzton Laboratory, Stanford University, Stanford California 94305, USA
    Appl Opt 49:F59-70. 2010
  6. doi Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths
    Krishna C Balram
    Edward L Ginzton Laboratory, Stanford University, CA 94305, USA
    Opt Express 21:10228-33. 2013
  7. doi Self-aligned silicon fins in metallic slits as a platform for planar wavelength-selective nanoscale resonant photodetectors
    Krishna C Balram
    Department of Electrical Engineering, Edward L Ginzton Laboratory, Stanford University, California 94305, USA
    Opt Express 20:22735-42. 2012
  8. doi Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon
    Elizabeth H Edwards
    Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
    Opt Express 21:867-76. 2013
  9. doi Design methodology for compact photonic-crystal-based wavelength division multiplexers
    Victor Liu
    Department of Electrical Engineering, Stanford University, Stanford, California, USA
    Opt Lett 36:591-3. 2011
  10. ncbi Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
    Yu Hsuan Kuo
    Solid State and Photonics Laboratory, Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
    Nature 437:1334-6. 2005

Collaborators

  • Stephanie A Claussen
  • Krishna C Balram
  • Elizabeth H Edwards
  • Victor Liu
  • Yang Jiao
  • Shanhui Fan
  • James S Harris
  • Theodore I Kamins
  • Edward T Fei
  • Yu Hsuan Kuo
  • Robert W Kelsall
  • Leon Lever
  • Zoran Ikonić
  • Rebecca K Schaevitz
  • Ross M Audet
  • Emel Tasyurek
  • Yiwen Rong
  • Yong Kyu Lee
  • Shen Ren
  • Yangsi Ge
  • Jonathan E Roth

Detail Information

Publications15

  1. doi How complicated must an optical component be?
    David A B Miller
    Ginzton Laboratory, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305, USA
    J Opt Soc Am A Opt Image Sci Vis 30:238-51. 2013
    ....
  2. doi All linear optical devices are mode converters
    David A B Miller
    Ginzton Laboratory, Stanford University, 348 Via Pueblo Mall, Stanford, CA 94305 4088, USA
    Opt Express 20:23985-93. 2012
    ..As illustrations, we use this approach to derive a general expression for the alignment tolerance of an efficient mode coupler and to prove that loss-less combining of orthogonal modes is impossible...
  3. doi Energy consumption in optical modulators for interconnects
    David A B Miller
    Ginzton Laboratory, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 4088, USA
    Opt Express 20:A293-308. 2012
    ....
  4. ncbi Communicating with waves between volumes: evaluating orthogonal spatial channels and limits on coupling strengths
    D A Miller
    Ginzton Laboratory, 450 Via Palou, Stanford University, Stanford, California 94305 4085, USA
    Appl Opt 39:1681-99. 2000
    ..In general, the approach gives a rigorous basis for handling problems related to volume sources and receivers. It may be especially applicable in near-field problems and in situations in which volume is an intrinsic part of the problem...
  5. doi Optical interconnects to electronic chips
    David A B Miller
    Ginzton Laboratory, Stanford University, Stanford California 94305, USA
    Appl Opt 49:F59-70. 2010
    ..This paper summarizes the progress toward and prospects for the penetration of optics all the way to the silicon chip...
  6. doi Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths
    Krishna C Balram
    Edward L Ginzton Laboratory, Stanford University, CA 94305, USA
    Opt Express 21:10228-33. 2013
    ..This approach is promising for the development of CMOS-compatible devices suitable for integrated, high-speed, and energy-efficient photodetection at telecommunications wavelengths...
  7. doi Self-aligned silicon fins in metallic slits as a platform for planar wavelength-selective nanoscale resonant photodetectors
    Krishna C Balram
    Department of Electrical Engineering, Edward L Ginzton Laboratory, Stanford University, California 94305, USA
    Opt Express 20:22735-42. 2012
    ..This approach is promising for the development of multispectral imaging sensors and low-capacitance photodetectors for short-range optical interconnects...
  8. doi Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon
    Elizabeth H Edwards
    Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
    Opt Express 21:867-76. 2013
    ....
  9. doi Design methodology for compact photonic-crystal-based wavelength division multiplexers
    Victor Liu
    Department of Electrical Engineering, Stanford University, Stanford, California, USA
    Opt Lett 36:591-3. 2011
    ..Our method is based on the Dirichlet-to-Neumman simulation method and uses low rank updates to the system to efficiently scan through many device designs...
  10. ncbi Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
    Yu Hsuan Kuo
    Solid State and Photonics Laboratory, Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
    Nature 437:1334-6. 2005
    ..This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture...
  11. doi Ultra-compact photonic crystal waveguide spatial mode converter and its connection to the optical diode effect
    Victor Liu
    Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
    Opt Express 20:28388-97. 2012
    ..We also present an extremely compact optical diode device and clarify its general properties and its relation to spatial mode converters. Finally, we connect the results here to a general theory on the complexity of optical designs...
  12. ncbi Demonstration of systematic photonic crystal device design and optimization by low-rank adjustments: an extremely compact mode separator
    Yang Jiao
    Ginzton Laboratory, Department of Electrical Engineering, Stanford University, Stanford, California 94305 4088, USA
    Opt Lett 30:141-3. 2005
    ..2 microm x 13.3 microm in size that demultiplexes the three modes of an input photonic crystal multimode waveguide into three single-mode output waveguides. We verify the method with finite-difference time-domain calculations...
  13. doi Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells
    Stephanie A Claussen
    Edward L Ginzton Laboratory, Stanford University, 348 Via Pueblo Mall, Stanford, CA 94305, USA
    Opt Express 18:25596-607. 2010
    ..We model this field screening by incorporating carrier escape from the quantum wells, drift across the intrinsic region, and recovery of the applied voltage through diffusive conduction...
  14. doi Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators
    Elizabeth H Edwards
    Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
    Opt Express 20:29164-73. 2012
    ..5 dB. For 60 ?m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization...
  15. ncbi Photonic crystal device sensitivity analysis with Wannier basis gradients
    Yang Jiao
    Ginzton Laboratory, Department of Electrical Engineering, Stanford University, Stanford, California 94305 4088, USA
    Opt Lett 30:302-4. 2005
    ..The method permits fast analysis of a large number of dielectric perturbation situations for multiple devices in a photonic crystal. We verify the method with finite-difference time-domain and plane-wave expansion calculations...