- Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wellsStephanie A Claussen
Edward L Ginzton Laboratory, Stanford University, 348 Via Pueblo Mall, Stanford, CA 94305, USA
Opt Express 18:25596-607. 2010..We model this field screening by incorporating carrier escape from the quantum wells, drift across the intrinsic region, and recovery of the applied voltage through diffusive conduction...
- Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulatorsElizabeth H Edwards
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
Opt Express 20:29164-73. 2012..5 dB. For 60 ?m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization...