Joshua A Robinson

Summary

Affiliation: Pennsylvania State University
Country: USA

Publications

  1. doi request reprint Nucleation of epitaxial graphene on SiC(0001)
    Joshua Robinson
    The Electro Optics Center, Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    ACS Nano 4:153-8. 2010
  2. doi request reprint Epitaxial graphene materials integration: effects of dielectric overlayers on structural and electronic properties
    Joshua A Robinson
    Department of Materials Science and Engineering, The Pennsylvania State University, The Electro Optics Center, University Park, Pennsylvania 16802, USA
    ACS Nano 4:2667-72. 2010
  3. doi request reprint Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures
    Yu Chuan Lin
    Department of Materials Science and Engineering and Center for 2 Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
    Nanoscale 8:8947-54. 2016
  4. doi request reprint Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale
    Joshua A Robinson
    Electro Optics Center and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    Nano Lett 9:2873-6. 2009
  5. doi request reprint Large-scale synthesis and functionalization of hexagonal boron nitride nanosheets
    Ganesh R Bhimanapati
    Center for 2 Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16803, USA
    Nanoscale 6:11671-5. 2014
  6. doi request reprint Raman topography and strain uniformity of large-area epitaxial graphene
    Joshua A Robinson
    Electro Optics Center, Materials Research Institute, and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    Nano Lett 9:964-8. 2009
  7. doi request reprint Epitaxial graphene transistors: enhancing performance via hydrogen intercalation
    Joshua A Robinson
    Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3875-80. 2011
  8. doi request reprint Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices
    Michael S Bresnehan
    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    ACS Nano 6:5234-41. 2012
  9. doi request reprint Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition
    Sarah M Eichfeld
    Department of Materials Science and Engineering, Center for Two Dimensional and Layered Materials, and Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Nano 9:2080-7. 2015
  10. doi request reprint Growth and Tunable Surface Wettability of Vertical MoS2 Layers for Improved Hydrogen Evolution Reactions
    Ganesh R Bhimanapati
    The Department of Material Science and Engineering, Center for 2 Dimensional Layered Materials, and NSF I UCRC Center for Atomically Thin Multifunctional Coatings, Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Appl Mater Interfaces 8:22190-5. 2016

Collaborators

  • Moon J Kim
  • Ke Wang
  • Simin Feng
  • Joshua D Caldwell
  • Yu Liu
  • Mauricio Terrones
  • Yu Chuan Lin
  • Matthew J Hollander
  • Sarah M Eichfeld
  • Robert M Wallace
  • Ganesh R Bhimanapati
  • Suman Datta
  • Michael S Bresnehan
  • David W Snyder
  • Kehao Zhang
  • Rafik Addou
  • Ning Lu
  • Michael Labella
  • Randall M Feenstra
  • Zakaria Y Al Balushi
  • Rafael A Vilá
  • Jun Hong Park
  • Joan M Redwing
  • Ram Krishna Ghosh
  • Angelica Azcatl
  • Jie Li
  • Xin Peng
  • Theresa S Mayer
  • Casey A Howsare
  • Randal Cavalero
  • Kathleen A Trumbull
  • Mark A Fanton
  • Sergio C de la Barrera
  • Roman Engel-Herbert
  • Kursti DeLello
  • Susan K Fullerton-Shirey
  • Greg Stone
  • Shruti Subramanian
  • Andrew C Kummel
  • Debdeep Jena
  • Huili Grace Xing
  • Zhong Lin
  • Yifan Nie
  • Hai Tian Zhang
  • Suresh Vishwanath
  • Ian Fuller
  • Jacek Furdyna
  • Yu Lei
  • Patrick C Mende
  • Xinyu Liu
  • Dennis F Paul
  • Trevor Hankins
  • Paul A Desario
  • Jun Li
  • Huawei Zhou
  • Kyeongjae Cho
  • Xiaoye Qin
  • Li jun Li
  • Vincent Bojan
  • Nan Wang
  • Lorraine Hossain
  • Stephen McDonnell
  • Aleksander F Piasecki
  • Yu Ping Sun
  • Jordan Lerach
  • Chanjing Zhou
  • Junjie Wang
  • Benjamin Kupp
  • Jun Zhu
  • Long Qing Chen
  • A Glen Birdwell
  • Wen jian Lu
  • Robert A Burke
  • Lain Jong Li
  • Bogdan Diaconescu
  • Daniel Kozuch
  • Chih Yuan S Chang
  • Taisuke Ohta
  • Hui Zhu
  • Maxwell Wetherington
  • Xiaojun Weng
  • Vince Bojan
  • David Snyder
  • Conor Puls
  • Joseph Stitt
  • Kathleen Trumbull
  • Xiaojun Wang
  • MICHAEL ZHU
  • Zachary R Hughes
  • Casey Howsare

Detail Information

Publications20

  1. doi request reprint Nucleation of epitaxial graphene on SiC(0001)
    Joshua Robinson
    The Electro Optics Center, Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    ACS Nano 4:153-8. 2010
    ..Addressing the presence of non-uniform graphene that may contain structural defects at terrace step edges will be key to the development of a large-scale graphene technology derived from silicon carbide...
  2. doi request reprint Epitaxial graphene materials integration: effects of dielectric overlayers on structural and electronic properties
    Joshua A Robinson
    Department of Materials Science and Engineering, The Pennsylvania State University, The Electro Optics Center, University Park, Pennsylvania 16802, USA
    ACS Nano 4:2667-72. 2010
    ..Finally, we discuss the potential of dielectric stack engineering for improved transistor performance...
  3. doi request reprint Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures
    Yu Chuan Lin
    Department of Materials Science and Engineering and Center for 2 Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
    Nanoscale 8:8947-54. 2016
    ..The results indicate that WSe2-EG(FH) displays ohmic behavior at small biases due to a large hole density in the WSe2, whereas WSe2-EG(PH) forms a Schottky barrier junction...
  4. doi request reprint Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale
    Joshua A Robinson
    Electro Optics Center and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    Nano Lett 9:2873-6. 2009
    ..Additionally, we achieve high mobility epitaxial graphene (18100 cm(2)/(V s) at room temperature) on SiC(0001) and show that carrier mobility depends strongly on the graphene layer stacking...
  5. doi request reprint Large-scale synthesis and functionalization of hexagonal boron nitride nanosheets
    Ganesh R Bhimanapati
    Center for 2 Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16803, USA
    Nanoscale 6:11671-5. 2014
    ..The exfoliated hBN nanosheets were crystalline as confirmed from X-ray diffraction and they also exhibited an optically active defect related to sulfur functionalization at 320 nm (3.9 ± 0.1 eV). ..
  6. doi request reprint Raman topography and strain uniformity of large-area epitaxial graphene
    Joshua A Robinson
    Electro Optics Center, Materials Research Institute, and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    Nano Lett 9:964-8. 2009
    ..We show that graphene strain can vary over a distance shorter than 300 nm and may be uniform only over roughly 1 microm. We show that nearly strain-free graphene is possible even in epitaxial graphene...
  7. doi request reprint Epitaxial graphene transistors: enhancing performance via hydrogen intercalation
    Joshua A Robinson
    Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3875-80. 2011
    ..Finally, we report a 10× improvement in the extrinsic current gain response of graphene transistors with optimal extrinsic current-gain cutoff frequencies of 24 GHz...
  8. doi request reprint Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices
    Michael S Bresnehan
    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    ACS Nano 6:5234-41. 2012
    ..Graphene transistors utilizing h-BN gates exhibit peak intrinsic cutoff frequencies >30 GHz (2.4× that of HfO(2)-based devices)...
  9. doi request reprint Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition
    Sarah M Eichfeld
    Department of Materials Science and Engineering, Center for Two Dimensional and Layered Materials, and Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Nano 9:2080-7. 2015
    ..Finally, TEM and vertical current/voltage transport provide evidence that a pristine van der Waals gap exists in WSe2/graphene heterostructures. ..
  10. doi request reprint Growth and Tunable Surface Wettability of Vertical MoS2 Layers for Improved Hydrogen Evolution Reactions
    Ganesh R Bhimanapati
    The Department of Material Science and Engineering, Center for 2 Dimensional Layered Materials, and NSF I UCRC Center for Atomically Thin Multifunctional Coatings, Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Appl Mater Interfaces 8:22190-5. 2016
    ..Hydrogen evolution reaction (HER) measurements indicate that the surface treated with UV-ozone showed a reduction in the Tafel slope from 185 to 54 mV/dec, suggesting an increase in the amount of reactive surface to generate hydrogen. ..
  11. doi request reprint Two-dimensional gallium nitride realized via graphene encapsulation
    Zakaria Y Al Balushi
    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    Nat Mater 15:1166-1171. 2016
    ..0 eV), 2D buckled structure. Our results provide a foundation for discovery and stabilization of 2D nitrides that are difficult to prepare via traditional synthesis...
  12. doi request reprint Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition
    Mark A Fanton
    The Electro Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Nano 5:8062-9. 2011
    ..Field effect transistors fabricated from this material had a typical current density of 200 mA/mm and transconductance of 40 mS/mm indicating that material performance may be comparable to graphene on SiC...
  13. doi request reprint Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers
    Michael S Bresnehan
    Department of Materials Science and Engineering, Electro Optics Center, Center for 2 Dimensional and Layered Materials, Materials Research Institute, and Department of Chemical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Appl Mater Interfaces 6:16755-62. 2014
    ....
  14. doi request reprint Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers
    Jun Hong Park
    Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Nano 10:4258-67. 2016
    ..73 eV in the Fermi level toward the valence band. However, after air exposure, the band gap of the oxidized WSe2 edges became about 1.08 eV larger than that of the WSe2 terraces, resulting in the electronic passivation of the WSe2. ..
  15. ncbi request reprint Substrate considerations for graphene synthesis on thin copper films
    Casey A Howsare
    Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
    Nanotechnology 23:135601. 2012
    ..As a result, we investigate the choice of a sapphire substrate and present evidence that it is a robust substrate for synthesis and processing of high quality, transfer-free graphene...
  16. ncbi request reprint Photoluminescence of monolayer transition metal dichalcogenides integrated with VO2
    Yu Chuan Lin
    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA Center for Two Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
    J Phys Condens Matter 28:504001. 2016
    ....
  17. doi request reprint Electrically driven reversible insulator-metal phase transition in 1T-TaS2
    Matthew J Hollander
    Electrical Engineering Department, Materials Science and Engineering Department, and Center for 2 Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 15:1861-6. 2015
    ..These results suggest that the transition is facilitated by a carrier driven collapse of the Mott gap in 1T-TaS2, which results in fast (3 ns) switching. ..
  18. ncbi request reprint Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene
    Matthew J Hollander
    Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3601-7. 2011
    ..The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport...
  19. doi request reprint Atomically thin heterostructures based on single-layer tungsten diselenide and graphene
    Yu Chuan Lin
    Department of Materials Science and Engineering and Center for 2 Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 14:6936-41. 2014
    ....
  20. doi request reprint Manganese Doping of Monolayer MoS2: The Substrate Is Critical
    Kehao Zhang
    Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
    Nano Lett 15:6586-91. 2015
    ..The results presented here demonstrate that tailoring the substrate surface could be the most significant factor in substitutional doping of TMDs with non-TMD elements. ..