Stuart S P Parkin

Summary

Affiliation: IBM Research
Country: USA

Publications

  1. doi Magnetic domain-wall racetrack memory
    Stuart S P Parkin
    IBM Almaden Research Center, San Jose, CA 95120 6099, USA
    Science 320:190-4. 2008
  2. ncbi Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
    Stuart S P Parkin
    IBM Research Division, IBM Almaden Research Center, IBM Infineon MRAM Development Alliance, 650 Harry Road, San Jose, California 95120, USA
    Nat Mater 3:862-7. 2004
  3. doi Suppression of ionic liquid gate-induced metallization of SrTiO3(001) by oxygen
    Mingyang Li
    IBM Almaden Research Center, San Jose, California, United States
    Nano Lett 13:4675-8. 2013
  4. doi Facet-Independent Electric-Field-Induced Volume Metallization of Tungsten Trioxide Films
    Simone G Altendorf
    IBM Almaden Research Center, San Jose, CA, 95120, USA
    Adv Mater 28:5284-92. 2016
  5. pmc Giant thermal spin-torque-assisted magnetic tunnel junction switching
    Aakash Pushp
    IBM Almaden Research Center, San Jose, CA 95120
    Proc Natl Acad Sci U S A 112:6585-90. 2015
  6. ncbi Oscillatory dependence of current-driven magnetic domain wall motion on current pulse length
    Luc Thomas
    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA
    Nature 443:197-200. 2006
  7. doi Crystal-facet-dependent metallization in electrolyte-gated rutile TiO2 single crystals
    Thomas D Schladt
    IBM Almaden Research Center, San Jose, California 95120, United States
    ACS Nano 7:8074-81. 2013
  8. doi Enhanced stochasticity of domain wall motion in magnetic racetracks due to dynamic pinning
    Xin Jiang
    IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120, USA
    Nat Commun 1:25. 2010
  9. ncbi Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide
    Justin S Brockman
    1 IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120 6099, USA 2 Department of Applied Physics, Stanford University, 348 Via Pueblo, Stanford, California 94305, USA
    Nat Nanotechnol 9:453-8. 2014
  10. pmc Giant facet-dependent spin-orbit torque and spin Hall conductivity in the triangular antiferromagnet IrMn3
    Weifeng Zhang
    IBM Research Almaden, San Jose, CA 95120, USA Department of Materials Science Engineering, Stanford University, Stanford, CA 94305, USA
    Sci Adv 2:e1600759. 2016

Collaborators

  • Yang Zhang
  • Xin Jiang
  • Jaewoo Jeong
  • Mahesh G Samant
  • See Hun Yang
  • Wei Han
  • Luc Thomas
  • Mingyang Li
  • Charles Rettner
  • Thomas D Schladt
  • Donata Passarello
  • Simone G Altendorf
  • Weifeng Zhang
  • Rai Moriya
  • Aakash Pushp
  • Tanja Graf
  • Li Gao
  • Pengfa Xu
  • Amir Capua
  • Kai Uwe Demasius
  • Timothy Phung
  • Brian P Hughes
  • Nagaphani B Aetukuri
  • Ivan Knez
  • Justin S Brockman
  • Kwang Su Ryu
  • Charles T Rettner
  • Philip M Rice
  • Masamitsu Hayashi
  • Igor V Maznichenko
  • Katayoon Mohseni
  • Arthur Ernst
  • Holger L Meyerheim
  • Sergey Ostanin
  • Ingrid Mertig
  • Eberhard K U Gross
  • Binghai Yan
  • Sergey V Faleev
  • Yan Sun
  • Claudia Felser
  • Andrew Kellock
  • Yari Ferrante
  • Brian Hughes
  • Lingjie Du
  • Kevin P Roche
  • Gerard Sullivan
  • Rui Rui Du
  • Adam Kajdos
  • Andrea Fantini
  • Nagaphani Aetukuri
  • Susanne Stemmer
  • Bastiaan Bergman
  • Teya Topuria

Detail Information

Publications23

  1. doi Magnetic domain-wall racetrack memory
    Stuart S P Parkin
    IBM Almaden Research Center, San Jose, CA 95120 6099, USA
    Science 320:190-4. 2008
    ..This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices...
  2. ncbi Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
    Stuart S P Parkin
    IBM Research Division, IBM Almaden Research Center, IBM Infineon MRAM Development Alliance, 650 Harry Road, San Jose, California 95120, USA
    Nat Mater 3:862-7. 2004
    ..Such high values of spin polarization and TMR in readily manufactureable and highly thermally stable devices (up to 400 degrees C) will accelerate the development of new families of spintronic devices...
  3. doi Suppression of ionic liquid gate-induced metallization of SrTiO3(001) by oxygen
    Mingyang Li
    IBM Almaden Research Center, San Jose, California, United States
    Nano Lett 13:4675-8. 2013
    ..The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced carrier annihilation. ..
  4. doi Facet-Independent Electric-Field-Induced Volume Metallization of Tungsten Trioxide Films
    Simone G Altendorf
    IBM Almaden Research Center, San Jose, CA, 95120, USA
    Adv Mater 28:5284-92. 2016
    ..The migration of oxygen ions along open volume channels is the underlying mechanism. ..
  5. pmc Giant thermal spin-torque-assisted magnetic tunnel junction switching
    Aakash Pushp
    IBM Almaden Research Center, San Jose, CA 95120
    Proc Natl Acad Sci U S A 112:6585-90. 2015
    ....
  6. ncbi Oscillatory dependence of current-driven magnetic domain wall motion on current pulse length
    Luc Thomas
    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA
    Nature 443:197-200. 2006
    ..This dynamic amplification effect could be exploited in magnetic nanodevices based on domain wall motion...
  7. doi Crystal-facet-dependent metallization in electrolyte-gated rutile TiO2 single crystals
    Thomas D Schladt
    IBM Almaden Research Center, San Jose, California 95120, United States
    ACS Nano 7:8074-81. 2013
    ..These effects take place at even relatively modest gate voltages. ..
  8. doi Enhanced stochasticity of domain wall motion in magnetic racetracks due to dynamic pinning
    Xin Jiang
    IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120, USA
    Nat Commun 1:25. 2010
    ..As a result, the DW periodically releases energy and thereby becomes more susceptible to pinning by local imperfections in the racetrack...
  9. ncbi Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide
    Justin S Brockman
    1 IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120 6099, USA 2 Department of Applied Physics, Stanford University, 348 Via Pueblo, Stanford, California 94305, USA
    Nat Nanotechnol 9:453-8. 2014
    ..We show that these incubation times can be accounted for by purely thermal effects and that intrinsic electronic-switching mechanisms may only be revealed using larger electric fields at even shorter timescales...
  10. pmc Giant facet-dependent spin-orbit torque and spin Hall conductivity in the triangular antiferromagnet IrMn3
    Weifeng Zhang
    IBM Research Almaden, San Jose, CA 95120, USA Department of Materials Science Engineering, Stanford University, Stanford, CA 94305, USA
    Sci Adv 2:e1600759. 2016
    ....
  11. doi Reversible Formation of 2D Electron Gas at the LaFeO3 /SrTiO3 Interface via Control of Oxygen Vacancies
    Pengfa Xu
    IBM Research Almaden, 650 Harry Road, San Jose, CA, 95120, USA
    Adv Mater . 2017
    ..The 2DEG is exquisitely sensitive to cation intermixing and oxygen nonstoichiometry. It is shown that the latter thus allows the controllable formation of the 2DEG via ionic liquid gating, thereby forming a nonvolatile switch...
  12. ncbi Discrete Domain Wall Positioning Due to Pinning in Current Driven Motion along Nanowires
    Xin Jiang
    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
    Nano Lett 11:96-100. 2011
    ..This results from DW relaxation after the end of the current pulse into local energy minima, likely derived from imperfections in the nanowire...
  13. doi Dynamics of magnetic domain walls under their own inertia
    Luc Thomas
    IBM Almaden Research Center, 650 Harry Road, San Jose, CA, USA
    Science 330:1810-3. 2010
    ..Thus, independent of its inertia, a domain wall can be accurately positioned using properly timed current pulses...
  14. doi Metallization of Epitaxial VO2 Films by Ionic Liquid Gating through Initially Insulating TiO2 Layers
    Donata Passarello
    IBM Research Almaden, San Jose, California 95120, United States
    Nano Lett 16:5475-81. 2016
    ..Ionic liquid gating of the VO2 films through initially insulating TiO2 layers is not consistent with conventional models that have assumed the gate induced carriers are of electrostatic origin. ..
  15. pmc Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy
    Jaewoo Jeong
    IBM Almaden Research Center, San Jose, California 95120, USA
    Nat Commun 7:10276. 2016
    ..We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible...
  16. pmc Enhanced spin-orbit torques by oxygen incorporation in tungsten films
    Kai Uwe Demasius
    IBM Almaden Research Center, San Jose, California 95120, USA
    Nat Commun 7:10644. 2016
    ....
  17. doi Chiral spin torque arising from proximity-induced magnetization
    Kwang Su Ryu
    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA
    Nat Commun 5:3910. 2014
    ..High domain velocities are found where there are large proximity-induced magnetizations in the interfaced metal layers. ..
  18. doi Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique
    Wei Han
    IBM Almaden Research Center, San Jose, California 95120, USA
    Nat Commun 4:2134. 2013
    ..Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material...
  19. doi Suppression of metal-insulator transition in VO2 by electric field-induced oxygen vacancy formation
    Jaewoo Jeong
    IBM Almaden Research Center, San Jose, CA 95120, USA
    Science 339:1402-5. 2013
    ..This mechanism should be taken into account in the interpretation of ionic liquid gating experiments...
  20. doi Parametric Harmonic Generation as a Probe of Unconstrained Spin Magnetization Precession in the Shallow Barrier Limit
    Amir Capua
    IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA
    Phys Rev Lett 116:047204. 2016
    ..Moreover, our approach may be used as a model system for the study of phase transitions in the field of nonlinear dynamics. ..
  21. ncbi Observation of edge transport in the disordered regime of topologically insulating InAs/GaSb quantum wells
    Ivan Knez
    IBM Research Almaden, San Jose, California 95120, USA
    Phys Rev Lett 112:026602. 2014
    ..Both quantized and self-averaged transport show resilience to magnetic fields, and are temperature independent for temperatures between 20 mK and 1 K...
  22. ncbi Role of percolation in the conductance of electrolyte-gated SrTiO3
    Mingyang Li
    IBM Almaden Research Center, San Jose, California, USA
    Phys Rev Lett 109:196803. 2012
    ..We postulate that this derives from nonpercolative transport due to inhomogeneous electric fields from imperfectly ordered ions at the electrolyte-oxide interface...
  23. ncbi Increased Tunneling Magnetoresistance Using Normally bcc CoFe Alloy Electrodes Made Amorphous without Glass Forming Additives
    Li Gao
    IBM Research Division, Almaden Research Center, San Jose, California 95120, USA and Department of Applied Physics, Stanford University, Stanford, California 94305, USA
    Phys Rev Lett 102:247205. 2009
    ..Indeed, x-ray emission spectroscopy shows a significant increase in the Fe, but not the Co, 3d density of states at the Fermi energy for thin amorphous CoFe layers...