Solomon Assefa

Summary

Affiliation: IBM Research
Country: USA

Publications

  1. ncbi request reprint Silicon-nitride surface passivation of submicrometer silicon waveguides for low-power optical switches
    Joris Van Campenhout
    IBM Research, T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Lett 34:1534-6. 2009
  2. ncbi request reprint Transmission of slow light through photonic crystal waveguide bends
    Solomon Assefa
    IBM TJ Watson Research Center Yorktown Heights, New York 10536, USA
    Opt Lett 31:745-7. 2006
  3. doi request reprint Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
    Solomon Assefa
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nature 464:80-4. 2010
  4. doi request reprint CMOS-integrated high-speed MSM germanium waveguide photodetector
    Solomon Assefa
    IBM TJ Watson Research Center, Yorktown Heights, NY 10536, USA
    Opt Express 18:4986-99. 2010
  5. ncbi request reprint High-order dispersion in photonic crystal waveguides
    Solomon Assefa
    IBM TJ Watson Research Center, Yorktown Heights, NY 10536, USA
    Opt Express 15:17562-9. 2007
  6. doi request reprint Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer
    Mackenzie A Van Camp
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA
    Opt Express 20:28009-16. 2012
  7. doi request reprint High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier
    Huapu Pan
    IBM Thomas J Watson Research Center, Yorktown Heights, NY 10598, USA
    Opt Express 20:18145-55. 2012
  8. doi request reprint Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks
    Joris Van Campenhout
    IBM T J Watson Research Center, Yorktown Heights, NY 10598, USA
    Opt Express 17:24020-9. 2009
  9. doi request reprint Non-blocking 4x4 electro-optic silicon switch for on-chip photonic networks
    Min Yang
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Express 19:47-54. 2011
  10. doi request reprint Drive-noise-tolerant broadband silicon electro-optic switch
    Joris Van Campenhout
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Express 19:11568-77. 2011

Collaborators

  • Huapu Pan
  • Ying Zhang
  • Xiaoping Liu
  • Fengnian Xia
  • Joris Van Campenhout
  • William M J Green
  • Yurii A Vlasov
  • Mackenzie A Van Camp
  • Min Yang
  • Philip M Rice
  • Steven M Shank
  • Douglas M Gill
  • Teya Topuria
  • Tymon Barwicz
  • Jeffrey A Kash
  • Fuad E Doany
  • Benjamin G Lee
  • Christopher V Jahnes
  • Clint L Schow
  • Richard M Osgood

Detail Information

Publications11

  1. ncbi request reprint Silicon-nitride surface passivation of submicrometer silicon waveguides for low-power optical switches
    Joris Van Campenhout
    IBM Research, T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Lett 34:1534-6. 2009
    ..Carrier lifetimes of up to 70 ns were obtained in waveguides passivated with a 45-nm-thick Si(3)N(4) coating. Such surface passivation is essential for low-power operation of optical switches based on carrier injection...
  2. ncbi request reprint Transmission of slow light through photonic crystal waveguide bends
    Solomon Assefa
    IBM TJ Watson Research Center Yorktown Heights, New York 10536, USA
    Opt Lett 31:745-7. 2006
    ..A general strategy is presented and experimentally verified to optimize the bend design for improved slow-light transmission...
  3. doi request reprint Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
    Solomon Assefa
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nature 464:80-4. 2010
    ..Monolithic integration of such a device into computer chips might enable applications beyond computer optical interconnects-in telecommunications, secure quantum key distribution, and subthreshold ultralow-power transistors...
  4. doi request reprint CMOS-integrated high-speed MSM germanium waveguide photodetector
    Solomon Assefa
    IBM TJ Watson Research Center, Yorktown Heights, NY 10536, USA
    Opt Express 18:4986-99. 2010
    ..Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal...
  5. ncbi request reprint High-order dispersion in photonic crystal waveguides
    Solomon Assefa
    IBM TJ Watson Research Center, Yorktown Heights, NY 10536, USA
    Opt Express 15:17562-9. 2007
    ..The results emphasize the importance of taking into consideration the effect of TOD and FOD on pulse broadening in the slow-light regime...
  6. doi request reprint Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer
    Mackenzie A Van Camp
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA
    Opt Express 20:28009-16. 2012
    ....
  7. doi request reprint High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier
    Huapu Pan
    IBM Thomas J Watson Research Center, Yorktown Heights, NY 10598, USA
    Opt Express 20:18145-55. 2012
    ..4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm...
  8. doi request reprint Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks
    Joris Van Campenhout
    IBM T J Watson Research Center, Yorktown Heights, NY 10598, USA
    Opt Express 17:24020-9. 2009
    ..The utilization of standard CMOS metallization results in a low drive voltage (approximately 1 V) and a record-low V(pi)L (approximately 0.06 V x mm). The wide optical bandwidth is maintained for temperature variations up to 30 K...
  9. doi request reprint Non-blocking 4x4 electro-optic silicon switch for on-chip photonic networks
    Min Yang
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Express 19:47-54. 2011
    ..High-speed 40 Gbps data transmission experiments verify optical data integrity for all input-output channels...
  10. doi request reprint Drive-noise-tolerant broadband silicon electro-optic switch
    Joris Van Campenhout
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Express 19:11568-77. 2011
    ..45 dB) than that of the single-stage switch. The noise-tolerant, low-crosstalk switch can thus play a key role within CMOS-integrated reconfigurable optical networks operating under noisy on-chip conditions...
  11. doi request reprint Integrated NiSi waveguide heaters for CMOS-compatible silicon thermo-optic devices
    Joris Van Campenhout
    IBM Research, T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Lett 35:1013-5. 2010
    ..The time constant of the thermo-optic response was less than 2.8 mus. Simulations suggest that a further reduction in the power consumption P(pi) is feasible...