Z Y Zhang

Summary

Affiliation: University of Sheffield
Country: UK

Publications

  1. ncbi Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process
    Z Y Zhang
    Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
    Opt Lett 33:1210-2. 2008
  2. pmc 1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser
    Z Y Zhang
    EPSRC National Centre for III V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom
    Sci Rep 2:477. 2012
  3. doi A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap
    Z Y Zhang
    Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
    Nanotechnology 20:055204. 2009
  4. doi Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes
    Z Y Zhang
    Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, UK
    Opt Express 18:7055-63. 2010
  5. doi Quantum dot selective area intermixing for broadband light sources
    K J Zhou
    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nano Science and Technology, Broad Lane, Sheffield, UK
    Opt Express 20:26950-7. 2012

Collaborators

  • Q Wang
  • K J Zhou
  • S J Matcher
  • Q Jiang
  • H Y Liu
  • Z H Lu
  • K Kennedy
  • R A Hogg
  • S M Chen

Detail Information

Publications5

  1. ncbi Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process
    Z Y Zhang
    Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
    Opt Lett 33:1210-2. 2008
    ..The device exhibits a 3 dB emission bandwidth of 146 nm centered at 984 nm with cw output power as high as 15 mW at room temperature corresponding to an extremely small coherence length of 6.6 microm...
  2. pmc 1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser
    Z Y Zhang
    EPSRC National Centre for III V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom
    Sci Rep 2:477. 2012
    ..With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices...
  3. doi A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap
    Z Y Zhang
    Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
    Nanotechnology 20:055204. 2009
    ....
  4. doi Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes
    Z Y Zhang
    Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, UK
    Opt Express 18:7055-63. 2010
    ..A selective area intermixed QD-SLED is demonstrated, and with optimized differential intermixing, such structures should allow ultra-broadband sources to be realized...
  5. doi Quantum dot selective area intermixing for broadband light sources
    K J Zhou
    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nano Science and Technology, Broad Lane, Sheffield, UK
    Opt Express 20:26950-7. 2012
    ..This corresponds to an axial resolution of 2.4μm. Such a small predicted axial resolution is highly desirable in optical coherence tomography system and other coherence-based systems applications...