D J H C Maas

Summary

Affiliation: Swiss Federal Institute of Technology
Country: Switzerland

Publications

  1. ncbi request reprint Growth parameter optimization for fast quantum dot SESAMs
    D J H C Maas
    Department of Physics, Institute of Quantum Electronics, ETH Zurich, Zurich, Switzerland
    Opt Express 16:18646-56. 2008
  2. doi request reprint High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power
    B Rudin
    Department of Physics, Institute for Quantum Electronics, ETH Zurich, Zurich, Switzerland
    Opt Express 18:27582-8. 2010
  3. ncbi request reprint Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode
    B Rudin
    Department of Physics, Institute of Quantum Electronics, ETH Zurich, Zurich, Switzerland
    Opt Lett 33:2719-21. 2008
  4. ncbi request reprint Femtosecond thin disk laser oscillator with pulse energy beyond the 10-microjoule level
    S V Marchese
    Department of Physics, Institute of Quantum Electronics, ETH Zurich, 8093 Zurich, Switzerland
    Opt Express 16:6397-407. 2008

Collaborators

  • S V Marchese
  • B Rudin
  • U Keller
  • T Sudmeyer
  • M Hoffmann
  • Y Barbarin
  • O D Sieber
  • M Golling
  • V J Wittwer
  • E Gini
  • A Rutz
  • A R Bellancourt

Detail Information

Publications4

  1. ncbi request reprint Growth parameter optimization for fast quantum dot SESAMs
    D J H C Maas
    Department of Physics, Institute of Quantum Electronics, ETH Zurich, Zurich, Switzerland
    Opt Express 16:18646-56. 2008
    ..We present design guidelines for QD-SESAMs with low saturation fluence and fast recovery, which are for example important for modelocking of vertical external cavity surface emitting lasers (VECSELs)...
  2. doi request reprint High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power
    B Rudin
    Department of Physics, Institute for Quantum Electronics, ETH Zurich, Zurich, Switzerland
    Opt Express 18:27582-8. 2010
    ..The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser...
  3. ncbi request reprint Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode
    B Rudin
    Department of Physics, Institute of Quantum Electronics, ETH Zurich, Zurich, Switzerland
    Opt Lett 33:2719-21. 2008
    ..1) at 960 nm. The laser is highly efficient with a slope efficiency of 49%, a pump threshold of 4.4 W, and an overall optical-to-optical efficiency of 43%...
  4. ncbi request reprint Femtosecond thin disk laser oscillator with pulse energy beyond the 10-microjoule level
    S V Marchese
    Department of Physics, Institute of Quantum Electronics, ETH Zurich, 8093 Zurich, Switzerland
    Opt Express 16:6397-407. 2008
    ..56-nm-broad spectrum centered at 1030 nm. The laser is operated in a helium atmosphere to eliminate the air nonlinearity inside the resonator that previously limited the pulse energy...