Heon Jin Choi

Summary

Affiliation: Yonsei University
Country: Korea

Publications

  1. doi request reprint Synthesis of Si nanosheets by a chemical vapor deposition process and their blue emissions
    Ungkil Kim
    School of Advanced Materials Science and Engineering, Yonsei University, Seoul 120 749, South Korea
    ACS Nano 5:2176-81. 2011
  2. pmc Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts
    Ryong Ha
    Department of Materials Science and Engineering, Yonsei University, Seoul 120 749, South Korea
    Nanoscale Res Lett 8:299. 2013
  3. pmc Vertical nanowire probes for intracellular signaling of living cells
    Ki Young Lee
    Department of Materials Science and Engineering, Yonsei University, Seoul 120 749, Republic of Korea
    Nanoscale Res Lett 9:56. 2014
  4. pmc Combinatorial growth of Si nanoribbons
    Tae Eon Park
    Department of Materials Science and Engineering, Yonsei University, Seoul 120 749, South Korea
    Nanoscale Res Lett 6:476. 2011
  5. ncbi request reprint Self-organized growth of Si/Silica/Er2Si2O7 core-shell nanowire heterostructures and their luminescence
    Heon Jin Choi
    School of Advanced Materials Science and Engineering, Yonsei University, Seoul 120 749, Korea
    Nano Lett 5:2432-7. 2005
  6. pmc Platinum assisted vapor-liquid-solid growth of er-si nanowires and their optical properties
    Myoung Ha Kim
    Department of Materials Science and Engineering, Yonsei University, Seoul, 120 749, Korea
    Nanoscale Res Lett 5:286-90. 2009
  7. pmc Large current difference in Au-coated vertical silicon nanowire electrode array with functionalization of peptides
    Ilsoo Kim
    Department of Materials Science and Engineering, Yonsei University, Seoul 120 749, Republic of Korea
    Nanoscale Res Lett 8:502. 2013
  8. doi request reprint Exchange-induced electron transport in heavily phosphorus-doped si nanowires
    Tae Eon Park
    Department of Materials Science and Engineering, Yonsei University, Seoul 120 749, Republic of Korea
    Nano Lett 11:4730-5. 2011
  9. pmc Coupling of semiconductor nanowires with neurons and their interfacial structure
    Ki Young Lee
    Department of Materials Science and Engineering, Yonsei University, Seoul, 120 749, South Korea
    Nanoscale Res Lett 5:410-5. 2009
  10. doi request reprint A ZnO nanowire-based photo-inverter with pulse-induced fast recovery
    Syed Raza Ali Raza
    Department of Physics, Yonsei University, Seoul 120 749, Korea
    Nanoscale 5:10829-34. 2013

Collaborators

  • Seung Cheol Lee
  • Ryong Ha
  • Ilsoo Kim
  • Young Tack Lee
  • Tae Eon Park
  • Ki Young Lee
  • Syed Raza Ali Raza
  • Seongil Im
  • Sung Wook Kim
  • Jaehyung Lee
  • Youn Ho Park
  • Pyo Jin Jeon
  • Ju Jin Kim
  • Seung Han Park
  • Ungkil Kim
  • Sanghun Han
  • Yong beom Lim
  • Du Won Jeong
  • So Eun Kim
  • Jae Pyeong Ahn
  • Kwang H Lee
  • Hyewhon Rhim
  • Joonyeon Chang
  • Boram Ryu
  • Myoung Ha Kim
  • Il Soo Kim
  • Han Kyu Seong
  • Jukwan Na
  • Min Ho Hong
  • Yong Joon Kwon
  • Dongjea Seo
  • Tea Eon Park
  • Jae Hoon Kim
  • Byoung Wook Kwon
  • Youn Gyoung Chang
  • Won Kook Choi
  • Seyed Hossein Hosseini Shokouh
  • Hyungsuk Kim
  • Sang Youp Yim
  • Jae Gwan Park
  • Yonghee Park
  • Ji Hoon Park
  • Byoung Chul Min
  • Jee Eun Yang
  • Hong Gyu Ahn
  • Moon Ho Jo
  • Peter Voorhees
  • Jung H Shin
  • Sojung Shim
  • Hwangyou Oh
  • Sunoh Kim
  • Yong Hee Park
  • Jae Young Kim
  • So Ra Kim

Detail Information

Publications20

  1. doi request reprint Synthesis of Si nanosheets by a chemical vapor deposition process and their blue emissions
    Ungkil Kim
    School of Advanced Materials Science and Engineering, Yonsei University, Seoul 120 749, South Korea
    ACS Nano 5:2176-81. 2011
    ..346 ns, also indicates the enhanced direct band gap transition in these Si NSs. These outcomes indicate that dimensionality of Si nanostructures may affect the band gap transition and, in turn, the optical properties...
  2. pmc Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts
    Ryong Ha
    Department of Materials Science and Engineering, Yonsei University, Seoul 120 749, South Korea
    Nanoscale Res Lett 8:299. 2013
    ..These vertically aligned GaN/InGaN heterostructure nanowires may be useful for the development of high-performance optoelectronic devices. ..
  3. pmc Vertical nanowire probes for intracellular signaling of living cells
    Ki Young Lee
    Department of Materials Science and Engineering, Yonsei University, Seoul 120 749, Republic of Korea
    Nanoscale Res Lett 9:56. 2014
    ..It successfully measured the action potential, which rapidly reached a steady state with average peak amplitude of approximately 10 mV, duration of approximately 140 ms, and period of 0.9 Hz. ..
  4. pmc Combinatorial growth of Si nanoribbons
    Tae Eon Park
    Department of Materials Science and Engineering, Yonsei University, Seoul 120 749, South Korea
    Nanoscale Res Lett 6:476. 2011
    ..These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twin-assisted VS mechanism for lateral growth...
  5. ncbi request reprint Self-organized growth of Si/Silica/Er2Si2O7 core-shell nanowire heterostructures and their luminescence
    Heon Jin Choi
    School of Advanced Materials Science and Engineering, Yonsei University, Seoul 120 749, Korea
    Nano Lett 5:2432-7. 2005
    ..The luminescence lifetime at room temperature was found to be 70 micros. The self-organized Si nanowires show great potential as the material basis for developing an Si-based Er light source...
  6. pmc Platinum assisted vapor-liquid-solid growth of er-si nanowires and their optical properties
    Myoung Ha Kim
    Department of Materials Science and Engineering, Yonsei University, Seoul, 120 749, Korea
    Nanoscale Res Lett 5:286-90. 2009
    ..Pt would be used as a VLS catalyst for high performance optically active Er-SiNWs...
  7. pmc Large current difference in Au-coated vertical silicon nanowire electrode array with functionalization of peptides
    Ilsoo Kim
    Department of Materials Science and Engineering, Yonsei University, Seoul 120 749, Republic of Korea
    Nanoscale Res Lett 8:502. 2013
    ..These results indicate that Au-coated VSENA is highly effective device to detect peptides compared to conventional thin-film electrodes. Au-coated VSNEA can also be used as a divergent biosensor platform in many applications. ..
  8. doi request reprint Exchange-induced electron transport in heavily phosphorus-doped si nanowires
    Tae Eon Park
    Department of Materials Science and Engineering, Yonsei University, Seoul 120 749, Republic of Korea
    Nano Lett 11:4730-5. 2011
    ..The analysis on the MR reveals that the localized spins are coupled antiferromagnetically at low temperature via the exchange interaction...
  9. pmc Coupling of semiconductor nanowires with neurons and their interfacial structure
    Ki Young Lee
    Department of Materials Science and Engineering, Yonsei University, Seoul, 120 749, South Korea
    Nanoscale Res Lett 5:410-5. 2009
    ..The results showed that the processes of neuron were adhered well on the nanowire without cleft...
  10. doi request reprint A ZnO nanowire-based photo-inverter with pulse-induced fast recovery
    Syed Raza Ali Raza
    Department of Physics, Yonsei University, Seoul 120 749, Korea
    Nanoscale 5:10829-34. 2013
    ..We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output. ..
  11. doi request reprint Long single ZnO nanowire for logic and memory circuits: NOT, NAND, NOR gate, and SRAM
    Young Tack Lee
    Department of Physics, Yonsei University, Seoul 120 749, Korea
    Nanoscale 5:4181-5. 2013
    ..We thus conclude that our long single NW approach is quite promising to extend the field of nano-electronics...
  12. doi request reprint Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors
    Syed Raza Ali Raza
    Institute of Physics and Applied Physics, Yonsei University, Seoul 120 749, Korea
    Phys Chem Chem Phys 15:2660-4. 2013
    ..3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights...
  13. ncbi request reprint Ferroelectric Nonvolatile Nanowire Memory Circuit Using a Single ZnO Nanowire and Copolymer Top Layer
    Young Tack Lee
    Institute of Physics and Applied Physics, Yonsei University, 262 Seongsanno, Seodaemun gu, Seoul 120 749, Republic of Korea
    Adv Mater 24:3020-5. 2012
    ..One part of the ZnO nanowire forms the channel of a top-gate ferroelectric field-effect transistor with a ferroelectric polymer while the rest is used as resistors...
  14. doi request reprint Synthesis of p-type GaN nanowires
    Sung Wook Kim
    Department of Materials Science and Engineering, Yonsei University, Seoul, 120 749, Korea
    Nanoscale 5:8550-4. 2013
    ..A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs. ..
  15. ncbi request reprint Room-temperature ferromagnetism in Cu doped GaN nanowires
    Han Kyu Seong
    Department of Materials Science and Engineering, Yonsei University, Seoul 120 749, Korea
    Nano Lett 7:3366-71. 2007
    ..These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor...
  16. pmc Magnetic In x Ga 1 - x N nanowires at room temperature using Cu dopant and annealing
    Youn Ho Park
    Department of Materials Science and Engineering, Yonsei University, Seoul, 120 749, Republic of Korea
    Nanoscale Res Lett 10:2501. 2015
    ..It possessed a small trivalent component, and thus, the n-type behavior of electrical property is measured at room temperature. ..
  17. ncbi request reprint Photostable dynamic rectification of one-dimensional schottky diode circuits with a ZnO nanowire doped by H during passivation
    Boram Ryu
    Institute of Physics and Applied Physics, Yonsei University, Seoul 120 749, Korea
    Nano Lett 11:4246-50. 2011
    ..We thus conclude that our results promisingly appoached one-dimensional nanoelectronics...
  18. pmc Sensitive and Selective Detection of HIV-1 RRE RNA Using Vertical Silicon Nanowire Electrode Array
    Jaehyung Lee
    Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, South Korea
    Nanoscale Res Lett 11:341. 2016
    ..The high sensitivity and selectivity of VSNEA for the detection of HIV-1 RRE RNA may be attributed to the high surface-to-volume ratio and total overlap diffusion mode of ions of the one-dimensional nanowire electrodes. ..
  19. pmc Efficient Direct Reduction of Graphene Oxide by Silicon Substrate
    Su Chan Lee
    Nano Electro Mechanical Device Laboratory, School of Mechanical Engineering, Yonsei University, Seoul 120 749, South Korea
    Sci Rep 5:12306. 2015
    ..By this process, a pure rGO film can be formed without the impurities that normally come from chemical reducing agents. This is an easy and environmentally friendly method to prepare large scale graphene films on Si substrates. ..