Ki Ha Hong

Summary

Affiliation: Sungkyunkwan University School of Medicine
Country: Korea

Publications

  1. doi Strain-driven electronic band structure modulation of si nanowires
    Ki Ha Hong
    Samsung Advanced Institute of Technology, Mt 14 1, Nongseo Dong, Giheung gu, Yongin si, Gyeonggi Do, 446 712, Korea
    Nano Lett 8:1335-40. 2008
  2. doi Asymmetric doping in silicon nanostructures: the impact of surface dangling bonds
    Ki Ha Hong
    Samsung Advanced Institute of Technology, Mt 14, Gyeonggi Do, Korea
    Nano Lett 10:1671-6. 2010
  3. ncbi Understanding of the formation of shallow level defects from the intrinsic defects of lead tri-halide perovskites
    Jongseob Kim
    Samsung Advanced Institute of Technology, Samsung Electronics Co, Ltd, Yongin si, Gyeonggi do 446 712, Korea
    Phys Chem Chem Phys 18:27143-27147. 2016
  4. doi Systematic analysis of the unique band gap modulation of mixed halide perovskites
    Jongseob Kim
    Samsung Advanced Institute of Technology, Samsung Electronics Co, Ltd, Yongin si, Gyeonggi do 446 712, Korea
    Phys Chem Chem Phys 18:4423-8. 2016
  5. doi Surface ferromagnetic p-type ZnO nanowires through charge transfer doping
    Sung Hoon Lee
    Samsung Advanced Institute of Technology, Yongin 446 712, Korea
    ACS Appl Mater Interfaces 4:1365-70. 2012
  6. doi Retarded dopant diffusion by moderated dopant-dopant interactions in Si nanowires
    Jongseob Kim
    Samsung Advanced Institute of Technology, Samsung Electronics Co, Ltd, Mt 14 1, Nongseo Dong, Giheung gu, Yongin si, Gyeonggi do 446 712, Korea
    Phys Chem Chem Phys 17:1575-9. 2015

Collaborators

  • Jongseob Kim
  • Sung Hoon Lee
  • Choong Heui Chung
  • KiNam Kim
  • Jaikwang Shin
  • Sungjin Kim

Detail Information

Publications6

  1. doi Strain-driven electronic band structure modulation of si nanowires
    Ki Ha Hong
    Samsung Advanced Institute of Technology, Mt 14 1, Nongseo Dong, Giheung gu, Yongin si, Gyeonggi Do, 446 712, Korea
    Nano Lett 8:1335-40. 2008
    ..We discuss the origin of this strain dependence based on the band features of bulk silicon and the wave functions of SiNWs. These results could be helpful for band structure engineering and analysis of SiNWs in nanoscale devices...
  2. doi Asymmetric doping in silicon nanostructures: the impact of surface dangling bonds
    Ki Ha Hong
    Samsung Advanced Institute of Technology, Mt 14, Gyeonggi Do, Korea
    Nano Lett 10:1671-6. 2010
    ..On the basis of our results, we show that the control of the growth direction of silicon nanowire as well as surface passivation is very important in preventing dopant deactivation...
  3. ncbi Understanding of the formation of shallow level defects from the intrinsic defects of lead tri-halide perovskites
    Jongseob Kim
    Samsung Advanced Institute of Technology, Samsung Electronics Co, Ltd, Yongin si, Gyeonggi do 446 712, Korea
    Phys Chem Chem Phys 18:27143-27147. 2016
    ..Additionally, our study shows that the formation of shallow level defects does not change even when the lattice structures of the perovskites do not reach their equilibrium structures...
  4. doi Systematic analysis of the unique band gap modulation of mixed halide perovskites
    Jongseob Kim
    Samsung Advanced Institute of Technology, Samsung Electronics Co, Ltd, Yongin si, Gyeonggi do 446 712, Korea
    Phys Chem Chem Phys 18:4423-8. 2016
    ..It is also presented that the band gap of mixed halide thin films can be significantly affected by the distribution of halide composition. ..
  5. doi Surface ferromagnetic p-type ZnO nanowires through charge transfer doping
    Sung Hoon Lee
    Samsung Advanced Institute of Technology, Yongin 446 712, Korea
    ACS Appl Mater Interfaces 4:1365-70. 2012
    ..The present results suggest that postgrowth engineering of surface states has high potential in manipulating ZnO nanostructures useful for both electronics and spintronics...
  6. doi Retarded dopant diffusion by moderated dopant-dopant interactions in Si nanowires
    Jongseob Kim
    Samsung Advanced Institute of Technology, Samsung Electronics Co, Ltd, Mt 14 1, Nongseo Dong, Giheung gu, Yongin si, Gyeonggi do 446 712, Korea
    Phys Chem Chem Phys 17:1575-9. 2015
    ..Thus, we suggest that an additional annealing process is indispensable to make a desired dopant profile in the nanoscale semiconductor devices. ..