Masahiro Nomura

Summary

Affiliation: University of Tokyo
Country: Japan

Publications

  1. ncbi request reprint Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate
    Katsuaki Tanabe
    Institute for Nano Quantum Information Electronics, University of Tokyo, Tokyo, Japan
    Opt Express 17:7036-42. 2009
  2. ncbi request reprint Photonic band-edge micro lasers with quantum dot gain
    Masahiro Nomura
    Institute for Nano Quantum Information Electronics, Research Center for Advanced Science and Technology, Institute of Industrial Science, The University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 17:640-8. 2009
  3. doi request reprint High-Q design of semiconductor-based ultrasmall photonic crystal nanocavity
    Masahiro Nomura
    Institute for Nano Quantum Information Electronics, The University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 18:8144-50. 2010
  4. doi request reprint Photonic crystal nanocavity laser with a single quantum dot gain
    Masahiro Nomura
    Institute for Nano Quantum Information Electronics, Institute of Industrial Science, The University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 17:15975-82. 2009
  5. doi request reprint GaAs-based air-slot photonic crystal nanocavity for optomechanical oscillators
    Masahiro Nomura
    Institute of Industrial Science, The University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 20:5204-12. 2012
  6. ncbi request reprint Circularly polarized light emission from semiconductor planar chiral nanostructures
    Kuniaki Konishi
    Photon Science Center, The University of Tokyo, 7 3 1 Hongo, Bunkyo ku, Tokyo 113 8656, Japan and Department of Applied Physics, The University of Tokyo and CREST JST, Hongo, Tokyo 113 8656, Japan
    Phys Rev Lett 106:057402. 2011

Collaborators

  • Katsuaki Tanabe
  • Kuniaki Konishi
  • Makoto Kuwata-Gonokami
  • Naoto Kumagai
  • Yasuhiko Arakawa
  • Satoshi Iwamoto

Detail Information

Publications6

  1. ncbi request reprint Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate
    Katsuaki Tanabe
    Institute for Nano Quantum Information Electronics, University of Tokyo, Tokyo, Japan
    Opt Express 17:7036-42. 2009
    ..This surface-emitting laser exhibited emission at 1.3 microm with a threshold absorbed power of 2 microW, the lowest out of any type of lasers on silicon...
  2. ncbi request reprint Photonic band-edge micro lasers with quantum dot gain
    Masahiro Nomura
    Institute for Nano Quantum Information Electronics, Research Center for Advanced Science and Technology, Institute of Industrial Science, The University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 17:640-8. 2009
    ..Extremely low laser thresholds of approximately 80 nW at 6 K was achieved. Lasing was observed in a defect-free photonic crystal as small as approximately 7 microm square...
  3. doi request reprint High-Q design of semiconductor-based ultrasmall photonic crystal nanocavity
    Masahiro Nomura
    Institute for Nano Quantum Information Electronics, The University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 18:8144-50. 2010
    ..This high-Q cavity design is applicable to Si and GaAs semiconductor materials...
  4. doi request reprint Photonic crystal nanocavity laser with a single quantum dot gain
    Masahiro Nomura
    Institute for Nano Quantum Information Electronics, Institute of Industrial Science, The University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 17:15975-82. 2009
    ....
  5. doi request reprint GaAs-based air-slot photonic crystal nanocavity for optomechanical oscillators
    Masahiro Nomura
    Institute of Industrial Science, The University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 20:5204-12. 2012
    ..This high mechanical quality factor of a GaAs-based structure stems from low thermoelastic loss and leads to more effective optical control of nanomechanical oscillators...
  6. ncbi request reprint Circularly polarized light emission from semiconductor planar chiral nanostructures
    Kuniaki Konishi
    Photon Science Center, The University of Tokyo, 7 3 1 Hongo, Bunkyo ku, Tokyo 113 8656, Japan and Department of Applied Physics, The University of Tokyo and CREST JST, Hongo, Tokyo 113 8656, Japan
    Phys Rev Lett 106:057402. 2011
    ..A strong circular anisotropy of the vacuum field modes inside the chiral nanostructure is visualized using numerical simulation. The results of the simulation agree well with experimental results...