Shinji Yuasa

Summary

Affiliation: National Institute of Advanced Industrial Science and Technology
Country: Japan

Publications

  1. ncbi request reprint Spin-polarized resonant tunneling in magnetic tunnel junctions
    S Yuasa
    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305 8568, Japan
    Science 297:234-7. 2002
  2. ncbi request reprint Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
    Shinji Yuasa
    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology AIST, Tsukuba, Ibaraki 305 8568, Japan
    Nat Mater 3:868-71. 2004

Collaborators

Detail Information

Publications2

  1. ncbi request reprint Spin-polarized resonant tunneling in magnetic tunnel junctions
    S Yuasa
    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305 8568, Japan
    Science 297:234-7. 2002
    ..The oscillation period depends on the applied bias voltage, reflecting the energy band structure of Cu. The results are encouraging for the development of spin-dependent resonant tunneling devices...
  2. ncbi request reprint Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
    Shinji Yuasa
    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology AIST, Tsukuba, Ibaraki 305 8568, Japan
    Nat Mater 3:868-71. 2004
    ..The coherent TMR effect is a key to making spintronic devices with novel quantum-mechanical functions, and to developing gigabit-scale MRAM...