- Spin-polarized resonant tunneling in magnetic tunnel junctionsS Yuasa
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305 8568, Japan
Science 297:234-7. 2002..The oscillation period depends on the applied bias voltage, reflecting the energy band structure of Cu. The results are encouraging for the development of spin-dependent resonant tunneling devices...
- Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctionsShinji Yuasa
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology AIST, Tsukuba, Ibaraki 305 8568, Japan
Nat Mater 3:868-71. 2004..The coherent TMR effect is a key to making spintronic devices with novel quantum-mechanical functions, and to developing gigabit-scale MRAM...