- A 340-nm-band ultraviolet laser diode composed of GaN well layersYoji Yamashita
Hamamatsu Photonics K K, 5000 Hirakuchi, Hamamatsu 434 8601, Japan
Opt Express 21:3133-7. 2013..1 lower than that of the underlying layer which was used for the previously reported 342 nm laser diode. These results provide a chance to the next step for a shorter-wavelength ultraviolet laser diode...