Simone Tisa

Summary

Affiliation: Politecnico di Milano
Country: Italy

Publications

  1. ncbi request reprint Variable-load quenching circuit for single-photon avalanche diodes
    Simone Tisa
    Politecnico di Milano, Dip Elettronica e Informazione piazza Leonardo da Vinci 32, I 20133 Milano, Italy
    Opt Express 16:2232-44. 2008
  2. ncbi request reprint Complete single-photon counting and timing module in a microchip
    Franco Zappa
    Politecnico di Milano, Dipartimento di Elettronica e Informazione, Piazza Leonardo da Vinci 32, 20133 Milano, Italy
    Opt Lett 30:1327-9. 2005
  3. doi request reprint Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm
    Carmelo Scarcella
    Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo da Vinci 32, I 20133 Milano, Italy
    Rev Sci Instrum 84:123112. 2013
  4. ncbi request reprint Sub-Rayleigh imaging via N-photon detection
    Fabrizio Guerrieri
    Dipartimento di Elettronica e Informazione, Politecnico di Milano, 20133 Milano, Italy
    Phys Rev Lett 105:163602. 2010

Collaborators

  • Alberto Tosi
  • Franco Zappa
  • Carmelo Scarcella
  • Fabrizio Guerrieri
  • Federica Villa
  • Franco N C Wong
  • Jeffrey H Shapiro
  • Lorenzo Maccone
  • Sergio Cova
  • Andrea Gallivanoni
  • Angelo Gulinatti

Detail Information

Publications4

  1. ncbi request reprint Variable-load quenching circuit for single-photon avalanche diodes
    Simone Tisa
    Politecnico di Milano, Dip Elettronica e Informazione piazza Leonardo da Vinci 32, I 20133 Milano, Italy
    Opt Express 16:2232-44. 2008
    ..The cell enables the development of large-dimension dense arrays of SPADs, for two-dimensional imaging at the photon counting level with photon-timing jitter better than 40 ps...
  2. ncbi request reprint Complete single-photon counting and timing module in a microchip
    Franco Zappa
    Politecnico di Milano, Dipartimento di Elettronica e Informazione, Piazza Leonardo da Vinci 32, 20133 Milano, Italy
    Opt Lett 30:1327-9. 2005
    ..With a 5-V overvoltage the photon detection efficiency peaks above 40% around 500 nm, and the dark-counting rate is lower than 600 counts/s at room temperature. The overall counting dead time is 33 ns...
  3. doi request reprint Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm
    Carmelo Scarcella
    Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo da Vinci 32, I 20133 Milano, Italy
    Rev Sci Instrum 84:123112. 2013
    ..Detection performance and microelectronic compactness of this CMOS SPAD array make it the best candidate for ultra-compact time-resolved spectrometers with single-photon sensitivity from 300 nm to 900 nm. ..
  4. ncbi request reprint Sub-Rayleigh imaging via N-photon detection
    Fabrizio Guerrieri
    Dipartimento di Elettronica e Informazione, Politecnico di Milano, 20133 Milano, Italy
    Phys Rev Lett 105:163602. 2010
    ..Experiments show resolution improvement by a factor ∼(N-N(max))(½) beyond the Rayleigh bound, where N(max) is the maximum average detected photon number in the image, in good agreement with theory...