Rainer Waser

Summary

Country: Germany

Publications

  1. ncbi request reprint Nanoionics-based resistive switching memories
    Rainer Waser
    Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, 52056 Aachen, Germany
    Nat Mater 6:833-40. 2007
  2. ncbi request reprint Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells
    Christina Schindler
    , and JARA Fundamentals of Future Information Technology, , 52425, , Germany
    Phys Chem Chem Phys 11:5974-9. 2009
  3. doi request reprint Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches
    Jan van den Hurk
    Institut für Werkstoffe der Elektrotechnik II IWE II and JARA FIT, RWTH Aachen University, Sommerfeldstr 24, D 52074 Aachen, Germany
    Nanotechnology 25:425202. 2014
  4. doi request reprint Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells
    Jan van den Hurk
    Institut für Werkstoffe der Elektrotechnik II IWE II and JARA FIT, RWTH Aachen University, Sommerfeldstr 24, 52074 Aachen, Germany
    Phys Chem Chem Phys 16:18217-25. 2014
  5. doi request reprint Generic relevance of counter charges for cation-based nanoscale resistive switching memories
    Stefan Tappertzhofen
    Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, 52074 Aachen, Germany
    ACS Nano 7:6396-402. 2013
  6. pmc Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architectures
    Jan van den Hurk
    Institut für Werkstoffe der Elektrotechnik II IWE II and JARA FIT, RWTH Aachen University, Sommerfeldstr 24, 52074 Aachen, Germany
    Sci Rep 3:2856. 2013
  7. doi request reprint Understanding the conductive channel evolution in Na:WO(3-x)-based planar devices
    Dashan Shang
    I Physikalisches Institut IA, RWTH Aachen University, 52074 Aachen, Germany
    Nanoscale 7:6023-30. 2015

Collaborators

  • Tao Wang
  • Jan van den Hurk
  • Ilia Valov
  • Dashan Shang
  • Eike Linn
  • Stefan Tappertzhofen
  • Christina Schindler
  • Peining Li
  • Baogen Shen
  • Thomas Taubner
  • Egidio Carria
  • Matthias Wuttig
  • Jirong Sun
  • Joshua Straquadine
  • Peter Walter
  • Hehe Zhang
  • Uwe Breuer
  • Ann Christin Dippel
  • Deok Yong Cho
  • Masakazu Aono
  • Viktor Havel
  • Tohru Tsuruoka
  • Tsuyoshi Hasegawa

Detail Information

Publications7

  1. ncbi request reprint Nanoionics-based resistive switching memories
    Rainer Waser
    Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, 52056 Aachen, Germany
    Nat Mater 6:833-40. 2007
    ..From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues...
  2. ncbi request reprint Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells
    Christina Schindler
    , and JARA Fundamentals of Future Information Technology, , 52425, , Germany
    Phys Chem Chem Phys 11:5974-9. 2009
    ..After forming, resistive switching with a write current of only 1 nA was observed demonstrating the feasibility of the fabrication of memory cells with ultra low power consumption...
  3. doi request reprint Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches
    Jan van den Hurk
    Institut für Werkstoffe der Elektrotechnik II IWE II and JARA FIT, RWTH Aachen University, Sommerfeldstr 24, D 52074 Aachen, Germany
    Nanotechnology 25:425202. 2014
    ..From our analysis we deduced a solution to use the VRS as an inherent selector mechanism without the need for additional selector devices. ..
  4. doi request reprint Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells
    Jan van den Hurk
    Institut für Werkstoffe der Elektrotechnik II IWE II and JARA FIT, RWTH Aachen University, Sommerfeldstr 24, 52074 Aachen, Germany
    Phys Chem Chem Phys 16:18217-25. 2014
    ..Electrical measurements demonstrate the effectiveness and high potential of the diffusion barrier layer in practical applications. ..
  5. doi request reprint Generic relevance of counter charges for cation-based nanoscale resistive switching memories
    Stefan Tappertzhofen
    Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, 52074 Aachen, Germany
    ACS Nano 7:6396-402. 2013
    ..Together with the dependence of the electromotive force on the ambient, these results contribute to the microscopic understanding of the resistive switching phenomena in cation-based ReRAMs. ..
  6. pmc Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architectures
    Jan van den Hurk
    Institut für Werkstoffe der Elektrotechnik II IWE II and JARA FIT, RWTH Aachen University, Sommerfeldstr 24, 52074 Aachen, Germany
    Sci Rep 3:2856. 2013
    ..Furthermore, from these observations we can deduce a simplified write voltage scheme which is applicable for the considered type of memory cell. ..
  7. doi request reprint Understanding the conductive channel evolution in Na:WO(3-x)-based planar devices
    Dashan Shang
    I Physikalisches Institut IA, RWTH Aachen University, 52074 Aachen, Germany
    Nanoscale 7:6023-30. 2015
    ....