O Demichel

Summary

Country: France

Publications

  1. doi request reprint Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method
    O Demichel
    Laboratoire Silicium Nanoelectronique Photonique et Structure, Service de Physique des Materiaux et Microstructures, Institut Nanosciences et Cryogenie, Commissariat a l Energie Atomique, Grenoble, France
    Nano Lett 10:2323-9. 2010
  2. doi request reprint Recombination dynamics of spatially confined electron-hole system in luminescent gold catalyzed silicon nanowires
    O Demichel
    Laboratoire Silicium Nanoelectronique Photonique et Structure, Service de Physique des Materiaux et Microstructures, Institut Nanosciences et Cryogenie, Commissariat a l Energie Atomique, F 38054 Grenoble Cedex, France
    Nano Lett 9:2575-8. 2009

Collaborators

Detail Information

Publications2

  1. doi request reprint Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method
    O Demichel
    Laboratoire Silicium Nanoelectronique Photonique et Structure, Service de Physique des Materiaux et Microstructures, Institut Nanosciences et Cryogenie, Commissariat a l Energie Atomique, Grenoble, France
    Nano Lett 10:2323-9. 2010
    ..These results advance the knowledge of SiNW surface passivation and provide essential guidance to the development of efficient nanowire-based devices...
  2. doi request reprint Recombination dynamics of spatially confined electron-hole system in luminescent gold catalyzed silicon nanowires
    O Demichel
    Laboratoire Silicium Nanoelectronique Photonique et Structure, Service de Physique des Materiaux et Microstructures, Institut Nanosciences et Cryogenie, Commissariat a l Energie Atomique, F 38054 Grenoble Cedex, France
    Nano Lett 9:2575-8. 2009
    ..The comparison of the PL intensity decay time of Au-SiNWs with high crystalline quality and purity silicon layer allows us to conclude that the Au-SiNW electronic properties are highly comparable to those of bulk silicon crystal...