Qing Chen

Summary

Affiliation: Peking University
Country: China

Publications

  1. doi Directly correlating the strain-induced electronic property change to the chirality of individual single-walled and few-walled carbon nanotubes
    Zhiyuan Ning
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P R China
    Nanoscale 7:13116-24. 2015
  2. doi Remarkable influence of slack on the vibration of a single-walled carbon nanotube resonator
    Zhiyuan Ning
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P R China
    Nanoscale 8:8658-65. 2016
  3. doi Negative photoconductivity of InAs nanowires
    Yuxiang Han
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Phys Chem Chem Phys 18:818-26. 2016
  4. doi The intrinsic origin of hysteresis in MoS2 field effect transistors
    Jiapei Shu
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People s Republic of China and Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
    Nanoscale 8:3049-56. 2016
  5. pmc Towards on-chip time-resolved thermal mapping with micro-/nanosensor arrays
    Haixiao Liu
    Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing, 100871, China
    Nanoscale Res Lett 7:484. 2012
  6. doi Fabrication and electric measurements of nanostructures inside transmission electron microscope
    Qing Chen
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Ultramicroscopy 111:948-54. 2011
  7. doi Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires
    Mengqi Fu
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
    Nano Lett 16:2478-84. 2016
  8. doi Room temperature synthesis of K2Mo3O10x3H2O nanowires in minutes
    Weiwei Gong
    Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing, People s Republic of China
    Nanotechnology 20:215603. 2009
  9. ncbi Whole-journey nanomaterial research in an electron microscope: from material synthesis, composition characterization, property measurements to device construction and tests
    ZhiQiang Tang
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Nanotechnology 27:485710. 2016
  10. doi Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage
    Zhiyong Zhang
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
    Nano Lett 8:3696-701. 2008

Collaborators

  • Dmitri Golberg
  • Yan Li
  • Zhiyong Zhang
  • Hong Li
  • Jun Shen
  • Qiang Zhang
  • Xianlong Wei
  • Qiang Sun
  • Yang Liu
  • Yu Zhang
  • Jingyun Wang
  • Jianhui Liao
  • Ying Wang
  • Wei Wang
  • Shengyong Xu
  • Zhongfan Liu
  • Mengqi Fu
  • Xing Li
  • Zhiyuan Ning
  • Yao Guo
  • Gongtao Wu
  • Yuxiang Han
  • ZhiQiang Tang
  • Jiapei Shu
  • Song Gao
  • Dong Pan
  • Jianhua Zhao
  • Hao Zheng
  • Tuanwei Shi
  • Rufan Zhang
  • Haixiao Liu
  • Xiao Zheng
  • Lianmao Peng
  • Qingqing Ji
  • Wenjun Li
  • Xiaoye Huo
  • Lin Gu
  • Dongdong Xiao
  • Fei Wei
  • Weiqiang Sun
  • Tingting Xu
  • Xuemin Qian
  • Weiwei Gong
  • Li Ding
  • Shaobo Cheng
  • Shiqing Deng
  • Tao Yang
  • Jing Zhu
  • Xianghai Ji
  • Xiaoye Wang
  • Weijian Lin
  • Bo Liu
  • Chenguang Qiu
  • Min Kan
  • Jiake Wei
  • Xuedong Bai
  • Linhui Ye
  • Donglin Ma
  • Jianping Shi
  • Jieyun Zheng
  • Chun Chen
  • Kaili Jiang
  • Yiran Liang
  • Yang Wu
  • Yong sheng Hu
  • Geng Chu
  • Fei Luo
  • Liquan Chen
  • Huanhuan Xie
  • Weizhong Qian
  • An Xiang
  • Ke Ran
  • Canbin Ouyang
  • Huibiao Liu
  • Rita Rosentsveig
  • Chaoying Zhang
  • Reshef Tenne
  • Lian Mao Peng
  • Tian Pei
  • Huayong Pan
  • Sheng Wang
  • Rongli Cui
  • Dapeng Wei
  • Leijing Yang
  • Kai Zhang
  • Qingsheng Zeng
  • Xuelei Liang
  • Zhenxing Wang
  • Zhan Wu
  • Jiongwei Xue

Detail Information

Publications30

  1. doi Directly correlating the strain-induced electronic property change to the chirality of individual single-walled and few-walled carbon nanotubes
    Zhiyuan Ning
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P R China
    Nanoscale 7:13116-24. 2015
    ....
  2. doi Remarkable influence of slack on the vibration of a single-walled carbon nanotube resonator
    Zhiyuan Ning
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P R China
    Nanoscale 8:8658-65. 2016
    ..Our results are important to understand and design resonators based on CNT and other nanomaterials...
  3. doi Negative photoconductivity of InAs nanowires
    Yuxiang Han
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Phys Chem Chem Phys 18:818-26. 2016
    ..The other one can be attributed to the photogating effect introduced by the native oxide layer outside the NWs. ..
  4. doi The intrinsic origin of hysteresis in MoS2 field effect transistors
    Jiapei Shu
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People s Republic of China and Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
    Nanoscale 8:3049-56. 2016
    ..The gate voltage sweep range, sweep direction, sweep time and loading history all affect the hysteresis observed in the transfer curves. ..
  5. pmc Towards on-chip time-resolved thermal mapping with micro-/nanosensor arrays
    Haixiao Liu
    Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing, 100871, China
    Nanoscale Res Lett 7:484. 2012
    ..We show that the TFTC array is a powerful tool for research fields such as chip thermal management, lab-on-a-chip, and other novel electrical, optical, or thermal devices...
  6. doi Fabrication and electric measurements of nanostructures inside transmission electron microscope
    Qing Chen
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Ultramicroscopy 111:948-54. 2011
    ..This review highlights in-situ electric measurements and in-situ fabrication and structure modification using manipulation holder inside TEM...
  7. doi Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires
    Mengqi Fu
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
    Nano Lett 16:2478-84. 2016
    ..Our work deepens the understanding of the structure-dependent electrical transport properties of InAs NWs and provides a potential way to tailor the device properties by controlling the crystal phase and orientation of the NWs. ..
  8. doi Room temperature synthesis of K2Mo3O10x3H2O nanowires in minutes
    Weiwei Gong
    Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing, People s Republic of China
    Nanotechnology 20:215603. 2009
    ....
  9. ncbi Whole-journey nanomaterial research in an electron microscope: from material synthesis, composition characterization, property measurements to device construction and tests
    ZhiQiang Tang
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Nanotechnology 27:485710. 2016
    ..The whole-journey research establishes the relationships between synthesis conditions, composition and structures, physical properties and nanodevice performances of tungsten oxide nanowires, and can be applied to other nanomaterials...
  10. doi Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage
    Zhiyong Zhang
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
    Nano Lett 8:3696-701. 2008
    ....
  11. doi Local Coulomb explosion of boron nitride nanotubes under electron beam irradiation
    Xianlong Wei
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    ACS Nano 7:3491-7. 2013
    ..LCE opens up an efficient and versatile way to engineer BNNTs and other dielectric nanostructures with a shorter time and a lower beam density than those required for the knock-on effect-based engineering...
  12. pmc Tunable graphene micro-emitters with fast temporal response and controllable electron emission
    Gongtao Wu
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
    Nat Commun 7:11513. 2016
    ..Graphene micro-emitters offer an opportunity of realizing large-scale addressable micro-emitter arrays for vacuum electronics applications. ..
  13. doi Effect of electrochemical dissolution and deposition order on lithium dendrite formation: a top view investigation
    Wenjun Li
    Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P R China
    Faraday Discuss 176:109-24. 2014
    ..The growth of lithium dendrites can be guided by electron flow when the formed lithium dendrite touches the carbon nanotube...
  14. doi Comparative fracture toughness of multilayer graphenes and boronitrenes
    Xianlong Wei
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P R China
    Nano Lett 15:689-94. 2015
    ..0 ± 3.9 and 5.5 ± 0.7 MPa√m, respectively, taking into account the notch tip blunting effects. ..
  15. doi Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm
    Tuanwei Shi
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Nanotechnology 26:175202. 2015
    ..Based on our results, it is advantageous to use Ni as contact metal for ultrathin NWs. We also observe that the FETs are still working in the diffusive regime even when the channel length is scaled down to 50 nm. ..
  16. doi Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices
    Li Ding
    Department of Electronics, Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China
    Nano Lett 9:4209-14. 2009
    ..639 mum have been achieved. Gate length scaling behavior of the Y-contacted CNT FETs is also investigated, revealing a more favorable energy consumption and faster intrinsic speed scaling than that of the Si-based devices...
  17. doi The fabrication of nanoelectrodes based on a single carbon nanotube
    Jun Shen
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Nanotechnology 20:245307. 2009
    ....
  18. doi Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire
    Yuxiang Han
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
    ACS Appl Mater Interfaces . 2017
    ..PPC is observed under high light intensity. Through removing the native oxide layer and passivating the nanowire with HfO2, we eliminate the NPC effect and realize intrinsic photoelectric response in InAs nanowire...
  19. doi Facile manipulation of individual carbon nanotubes assisted by inorganic nanoparticles
    Rufan Zhang
    Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, China
    Nanoscale 5:6584-8. 2013
    ..Our results demonstrate the extraordinary capability of this manipulation technique for individual CNTs, enabled by decoration with inorganic NPs. ..
  20. doi Patterned close-packed nanoparticle arrays with controllable dimensions and precise locations
    Jianhui Liao
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing, 100871, PR China
    Small 8:991-6. 2012
    ..The morphology and position of the nanoparticle arrays are determined by the relief structures, while the internal order of the arrays is achieved through the self-assembly process and is maintained during the transfer...
  21. pmc Direct Observation of the Layer-by-Layer Growth of ZnO Nanopillar by In situ High Resolution Transmission Electron Microscopy
    Xing Li
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, P R China
    Sci Rep 7:40911. 2017
    ....
  22. doi Almost perfectly symmetric SWCNT-based CMOS devices and scaling
    Zhiyong Zhang
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, China
    ACS Nano 3:3781-7. 2009
    ..s) and holes (3300 cm(2)/V.s)...
  23. pmc Breakdown of Richardson's law in electron emission from individual self-Joule-heated carbon nanotubes
    Xianlong Wei
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P R China
    Sci Rep 4:5102. 2014
    ....
  24. doi New insight in understanding oxygen reduction and evolution in solid-state lithium-oxygen batteries using an in situ environmental scanning electron microscope
    Hao Zheng
    Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P R China
    Nano Lett 14:4245-9. 2014
    ....
  25. ncbi Construction of graphdiyne nanowires with high-conductivity and mobility
    Xuemin Qian
    CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P R China
    Dalton Trans 41:730-3. 2012
    ..1 × 10(2) cm(2) V(-1) s(-1) at room temperature. The results have confirmed that GDNW is indeed a promising and key novel material in electronic and photoelectric fields for both fundamental and potentially practical applications...
  26. doi Unravelling orientation distribution and merging behavior of monolayer MoS2 domains on sapphire
    Qingqing Ji
    Center for Nanochemistry CNC, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Department of Materials Science and Engineering, College of Engineering, Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, and Center for Applied Physics and Technology, Peking University, Beijing 100871, People s Republic of China
    Nano Lett 15:198-205. 2015
    ..These findings are expected to shed light on the controlled MoS2 growth toward predefined domain orientation and large domain size, thus enabling its versatile applications in next-generation nanoelectronics and optoelectronics. ..
  27. doi A nano-stripe based sensor for temperature measurement at the submicrometer and nano scales
    Xiaoye Huo
    Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing, 100871, China
    Small 10:3869-75. 2014
    ..The results confirm the size effect in Seebeck coefficient previously observed in microstripe sensors of the same device configuration. ..
  28. doi Self-healing of bended WS2 nanotubes and its effect on the nanotube's properties
    Tingting Xu
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, PR China
    Nanoscale 4:7825-31. 2012
    ..More importantly, the strength and electrical conductivity of the NTs were also restored to their original level when the structure recovered...
  29. ncbi Controlling electron-beam-induced carbon deposition on carbon nanotubes by Joule heating
    Xian Long Wei
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Nanotechnology 19:355304. 2008
    ..The method can be used to control the deposition rate of EBID in nanowelding and nanofabrication and to eliminate amorphous carbon contamination in in situ study of nanostructures...
  30. doi Phonon-assisted electron emission from individual carbon nanotubes
    Xianlong Wei
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, People s Republic of China
    Nano Lett 11:734-9. 2011
    ..A low working voltage, high emission density, and side emission character make phonon-assisted electron emission primarily promising in electron source applications...