Xw Zhang

Summary

Publications

  1. doi Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition
    Jun Hua Meng
    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P R China
    Nanoscale 7:16046-53. 2015
  2. pmc Magnetic Properties of FePt Nanoparticles Prepared by a Micellar Method
    Y Gao
    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing, 100083, People s Republic of China
    Nanoscale Res Lett 5:1-6. 2009
  3. pmc Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
    Jm Liu
    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P, O, Box 912, 100083, Beijing, People s Republic of China
    Nanoscale Res Lett 5:1340-3. 2010

Collaborators

  • Jun Hua Meng
  • Jm Liu
  • Y Gao
  • Zhi gang Yin
  • Hao Lin Wang
  • Xi Biao Ren
  • Chuan Hong Jin
  • Xin Liu
  • Heng Liu
  • Cm Li
  • Hy Wei
  • J Wang
  • Xl Liu
  • Sy Yang
  • Qs Zhu
  • Zg Wang
  • Ym Fan
  • Xq Xu
  • Nf Chen
  • Jb You
  • Zg Yin
  • S Qu

Detail Information

Publications4

  1. doi Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition
    Jun Hua Meng
    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P R China
    Nanoscale 7:16046-53. 2015
    ..The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures. ..
  2. pmc Magnetic Properties of FePt Nanoparticles Prepared by a Micellar Method
    Y Gao
    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing, 100083, People s Republic of China
    Nanoscale Res Lett 5:1-6. 2009
    ..Additionally, a slight parallel magnetic anisotropy was also observed. The results indicate the micellar method has a high potential in preparing FePt nanoparticle arrays used for ultrahigh density recording media...
  3. pmc Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
    Jm Liu
    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P, O, Box 912, 100083, Beijing, People s Republic of China
    Nanoscale Res Lett 5:1340-3. 2010
    ..30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices...