| Tongbo Wei Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islandsTongbo Wei Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Opt Express 19:1065-71. 2011 Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surfaceBo Sun State Key Laboratory of Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Opt Express 20:18537-44. 2012 Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodesYiyun Zhang Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Opt Express 20:6808-15. 2012
| - Bo Sun
- Yiyun Zhang
- Xiaoyan Yi
- Xiangyang Song
- Guohong Wang
- Jinmin Li
- Haiyang Zheng
- Haizhong Xie
- Jing Li
- Hua Yang
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