Faxian Xiu

Summary

Affiliation: University of California
Country: USA

Publications

  1. pmc Coherent magnetic semiconductor nanodot arrays
    Yong Wang
    Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia Campus, Brisbane QLD 4072, Australia
    Nanoscale Res Lett 6:134. 2011
  2. ncbi request reprint Voltage-controlled ferromagnetic order in MnGe quantum dots
    Faxian Xiu
    Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095 1594, USA
    Nanotechnology 21:375606. 2010
  3. ncbi request reprint Room-temperature electric-field controlled ferromagnetism in Mn0.05Ge0.95 quantum dots
    Faxian Xiu
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
    ACS Nano 4:4948-54. 2010
  4. doi request reprint Synthesis of high-Curie-temperature Fe0.02Ge0.98 quantum dots
    Faxian Xiu
    Department of Electrical Engineering, University of California, Los Angeles, California 92521, USA
    J Am Chem Soc 132:11425-7. 2010
  5. ncbi request reprint Manipulating surface states in topological insulator nanoribbons
    Faxian Xiu
    Department of Electrical Engineering, University of California Los Angeles, CA 90095, USA
    Nat Nanotechnol 6:216-21. 2011
  6. doi request reprint Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film
    Liang He
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
    Nano Lett 12:1486-90. 2012
  7. doi request reprint Revelation of topological surface states in Bi2Se3 thin films by in situ Al passivation
    Murong Lang
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
    ACS Nano 6:295-302. 2012
  8. pmc Evidence of the two surface states of (Bi0.53Sb0.47)2Te3 films grown by van der Waals epitaxy
    Liang He
    1 Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA 2
    Sci Rep 3:3406. 2013
  9. doi request reprint Separation of top and bottom surface conduction in Bi2Te3 thin films
    Xinxin Yu
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA
    Nanotechnology 24:015705. 2013
  10. doi request reprint Manipulating surface-related ferromagnetism in modulation-doped topological insulators
    Xufeng Kou
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, United States
    Nano Lett 13:4587-93. 2013

Collaborators

  • Yong Wang
  • Jin Zou
  • Yi Zhou
  • Augustin J Hong
  • Zhigang Chen
  • Yu Huang
  • Ke Sun
  • Wei Liu
  • Kang L Wang
  • Liang He
  • Murong Lang
  • Xufeng Kou
  • Jianshi Tang
  • Wanjun Jiang
  • Xinxin Yu
  • Yabin Fan
  • Ying Jiang
  • Tianxiao Nie
  • Guan Huang
  • Jiyoung Kim
  • Lih Juann Chen
  • Cho Jen Tsai
  • Chiu Yen Wang
  • Jingwei Bai
  • Minsheng Wang
  • Peng Zhang
  • Zhikun Xing
  • Kin Wong
  • Robert N Schwartz
  • Pramey Upadhyaya
  • Eun Sang Choi
  • Zhiming Liao
  • Nai Chang Yeh
  • Marcus Teague
  • Alexei V Fedorov
  • Yu Lun Chueh
  • Chi On Chui
  • Yongha Hwang
  • Kosmas Galatsis
  • Joo Tae Moon
  • Li Wei Chu
  • Alex Khitun
  • Ming Bao
  • Siyoung Choi
  • Igor Ovchinnikov
  • Rob N Candler
  • Sung Min Kim
  • Emil B Song
  • Kyeong Sik Shin
  • Lei Liao
  • Hong jie Yang
  • Hsing Yu Tuan
  • Xiangfeng Duan
  • Alexandros Shailos
  • Shengyu Chen
  • Caifu Zeng
  • Rui Cheng

Detail Information

Publications18

  1. pmc Coherent magnetic semiconductor nanodot arrays
    Yong Wang
    Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia Campus, Brisbane QLD 4072, Australia
    Nanoscale Res Lett 6:134. 2011
    ..The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation...
  2. ncbi request reprint Voltage-controlled ferromagnetic order in MnGe quantum dots
    Faxian Xiu
    Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095 1594, USA
    Nanotechnology 21:375606. 2010
    ....
  3. ncbi request reprint Room-temperature electric-field controlled ferromagnetism in Mn0.05Ge0.95 quantum dots
    Faxian Xiu
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
    ACS Nano 4:4948-54. 2010
    ..Our results are fundamentally and technologically important toward the realization of room-temperature spin field-effect transistors and nonvolatile spin logic devices...
  4. doi request reprint Synthesis of high-Curie-temperature Fe0.02Ge0.98 quantum dots
    Faxian Xiu
    Department of Electrical Engineering, University of California, Los Angeles, California 92521, USA
    J Am Chem Soc 132:11425-7. 2010
    ..Such extraordinary magnetic properties can potentially resolve the critical problem of power dissipation in today's integrated circuits and lead to the realization of a new class of spintronics devices...
  5. ncbi request reprint Manipulating surface states in topological insulator nanoribbons
    Faxian Xiu
    Department of Electrical Engineering, University of California Los Angeles, CA 90095, USA
    Nat Nanotechnol 6:216-21. 2011
    ..The high surface conduction and ability to manipulate the surface states demonstrated here could lead to new applications in nanoelectronics and spintronics...
  6. doi request reprint Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film
    Liang He
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
    Nano Lett 12:1486-90. 2012
    ..Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states, when the film thickness is pushed to nanometer range...
  7. doi request reprint Revelation of topological surface states in Bi2Se3 thin films by in situ Al passivation
    Murong Lang
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
    ACS Nano 6:295-302. 2012
    ..2% due to ambient n-doping, the SdH oscillations are completely absent, and a large deviation from WAL is observed...
  8. pmc Evidence of the two surface states of (Bi0.53Sb0.47)2Te3 films grown by van der Waals epitaxy
    Liang He
    1 Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA 2
    Sci Rep 3:3406. 2013
    ..The observation of the two surface states may lead to a path towards the implementation of TIs in spintronics. ..
  9. doi request reprint Separation of top and bottom surface conduction in Bi2Te3 thin films
    Xinxin Yu
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA
    Nanotechnology 24:015705. 2013
    ..Our results on the surface control hence pave a way for the realization of QSH effect in topological insulators which requires a selective control of spin transports on the top/bottom surfaces...
  10. doi request reprint Manipulating surface-related ferromagnetism in modulation-doped topological insulators
    Xufeng Kou
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, United States
    Nano Lett 13:4587-93. 2013
    ....
  11. ncbi request reprint Oxide-confined formation of germanium nanowire heterostructures for high-performance transistors
    Jianshi Tang
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
    ACS Nano 5:6008-15. 2011
    ..Our innovative approach provides another freedom to control the growth of nanowire heterostructure and to further achieve high-performance nanowire transistors...
  12. ncbi request reprint Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots
    Faxian Xiu
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
    Nat Mater 9:337-44. 2010
    ..Our results are fundamentally important in the understanding and to the realization of high-efficiency Ge-based spin field-effect transistors...
  13. doi request reprint Metal nanodot memory by self-assembled block copolymer lift-off
    Augustin J Hong
    Department of Electrical Engineering, University of California Los Angeles, CA 90095, USA
    Nano Lett 10:224-9. 2010
    ....
  14. ncbi request reprint Na-Doped p-Type ZnO Microwires
    Wei Liu
    Department of Materials Science and Engineering and Department of Electrical Engineering, University of California, Los Angeles, California 90095, Materials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia, and Department of Electrical Engineering, University of California, Riverside, California 92521
    J Am Chem Soc 132:2498-9. 2010
    ..p-Type doping was confirmed by the electrical transport in single-wire field-effect transistors and low-temperature photoluminescence. The carrier mobility of the microwires was estimated to be approximately 2.1 cm(2) V(-1) S(-1)...
  15. ncbi request reprint A stacked memory device on logic 3D technology for ultra-high-density data storage
    Jiyoung Kim
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA
    Nanotechnology 22:254006. 2011
    ..Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures...
  16. ncbi request reprint Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors
    Jianshi Tang
    Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA
    Nanotechnology 21:505704. 2010
    ..Electrical measurements show a good p-type FET behavior with an on/off ratio over 10(3) and a one order of magnitude improvement in hole mobility from that of SFLS-synthesized Ge nanowire...
  17. pmc Very large magnetoresistance in graphene nanoribbons
    Jingwei Bai
    Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA
    Nat Nanotechnol 5:655-9. 2010
    ..The large observed values of magnetoresistance may be attributed to the reduction of quantum confinement through the formation of cyclotron orbits and the delocalization effect under the perpendicular magnetic field...
  18. ncbi request reprint From nanoelectronics to nano-spintronics
    Kang L Wang
    Device Research Laboratory DRL, Marco Focus Center on Functional Engineered Nano Architectonics FENA, Western Institute of Nanoelectronics WIN, California NanoSystems Institute CNSI, University of California, Los Angeles, CA 90095 1594, USA
    J Nanosci Nanotechnol 11:306-13. 2011
    ..We will also further describe a potential new method of electric field control of metallic ferromagnetism via field effect of the Thomas Fermi surface layer...