Faxian XiuSummaryAffiliation: University of California Country: USA Publications
| Collaborators
|
Detail Information
Publications
Coherent magnetic semiconductor nanodot arraysYong Wang
Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia Campus, Brisbane QLD 4072, Australia
Nanoscale Res Lett 6:134. 2011..The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation...
Manipulating surface states in topological insulator nanoribbonsFaxian Xiu
Department of Electrical Engineering, University of California Los Angeles, CA 90095, USA
Nat Nanotechnol 6:216-21. 2011..The high surface conduction and ability to manipulate the surface states demonstrated here could lead to new applications in nanoelectronics and spintronics...- Room-temperature electric-field controlled ferromagnetism in Mn0.05Ge0.95 quantum dotsFaxian Xiu
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
ACS Nano 4:4948-54. 2010..Our results are fundamentally and technologically important toward the realization of room-temperature spin field-effect transistors and nonvolatile spin logic devices... 
Synthesis of high-Curie-temperature Fe0.02Ge0.98 quantum dotsFaxian Xiu
Department of Electrical Engineering, University of California, Los Angeles, California 92521, USA
J Am Chem Soc 132:11425-7. 2010..Such extraordinary magnetic properties can potentially resolve the critical problem of power dissipation in today's integrated circuits and lead to the realization of a new class of spintronics devices...- Voltage-controlled ferromagnetic order in MnGe quantum dotsFaxian Xiu
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095 1594, USA
Nanotechnology 21:375606. 2010.... - Surface-dominated conduction in a 6 nm thick Bi2Se3 thin filmLiang He
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
Nano Lett 12:1486-90. 2012..Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states, when the film thickness is pushed to nanometer range... - Revelation of topological surface states in Bi2Se3 thin films by in situ Al passivationMurong Lang
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
ACS Nano 6:295-302. 2012..2% due to ambient n-doping, the SdH oscillations are completely absent, and a large deviation from WAL is observed... - Separation of top and bottom surface conduction in Bi2Te3 thin filmsXinxin Yu
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA
Nanotechnology 24:015705. 2013..Our results on the surface control hence pave a way for the realization of QSH effect in topological insulators which requires a selective control of spin transports on the top/bottom surfaces... - Oxide-confined formation of germanium nanowire heterostructures for high-performance transistorsJianshi Tang
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
ACS Nano 5:6008-15. 2011..Our innovative approach provides another freedom to control the growth of nanowire heterostructure and to further achieve high-performance nanowire transistors... - Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dotsFaxian Xiu
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
Nat Mater 9:337-44. 2010..Our results are fundamentally important in the understanding and to the realization of high-efficiency Ge-based spin field-effect transistors... - Na-Doped p-Type ZnO MicrowiresWei Liu
Department of Materials Science and Engineering and Department of Electrical Engineering, University of California, Los Angeles, California 90095, Materials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia, and Department of Electrical Engineering, University of California, Riverside, California 92521
J Am Chem Soc 132:2498-9. 2010..p-Type doping was confirmed by the electrical transport in single-wire field-effect transistors and low-temperature photoluminescence. The carrier mobility of the microwires was estimated to be approximately 2.1 cm(2) V(-1) S(-1)... - Metal nanodot memory by self-assembled block copolymer lift-offAugustin J Hong
Department of Electrical Engineering, University of California Los Angeles, CA 90095, USA
Nano Lett 10:224-9. 2010.... - Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistorsJianshi Tang
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA
Nanotechnology 21:505704. 2010..Electrical measurements show a good p-type FET behavior with an on/off ratio over 10(3) and a one order of magnitude improvement in hole mobility from that of SFLS-synthesized Ge nanowire... - A stacked memory device on logic 3D technology for ultra-high-density data storageJiyoung Kim
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA
Nanotechnology 22:254006. 2011..Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures... - Very large magnetoresistance in graphene nanoribbonsJingwei Bai
Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA
Nat Nanotechnol 5:655-9. 2010..The large observed values of magnetoresistance may be attributed to the reduction of quantum confinement through the formation of cyclotron orbits and the delocalization effect under the perpendicular magnetic field... - From nanoelectronics to nano-spintronicsKang L Wang
Device Research Laboratory DRL, Marco Focus Center on Functional Engineered Nano Architectonics FENA, Western Institute of Nanoelectronics WIN, California NanoSystems Institute CNSI, University of California, Los Angeles, CA 90095 1594, USA
J Nanosci Nanotechnol 11:306-13. 2011..We will also further describe a potential new method of electric field control of metallic ferromagnetism via field effect of the Thomas Fermi surface layer...