Affiliation: University of Arkansas
- Origins of 1/f noise in nanostructure inclusion polymorphous silicon filmsShibin Li
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China UESTC, Chengdu 610054, China
Nanoscale Res Lett 6:281. 2011..The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature...
- InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode ApplicationsZhenhua Li
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
Nanoscale Res Lett 5:1079-84. 2010..8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications...
- Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfacesJiang Wu
Arkansas Institute of Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
Nanoscale 3:1485-8. 2011..Long exciton decay times, over 1 ns, are also measured by time-resolved photoluminescence technique for all samples. Our results demonstrate the potential for QDs on GaAs high index substrates for wideband applications...
- Nanoscale footprints of self-running gallium droplets on GaAs surfaceJiang Wu
Arkansas Institute for Nanoscale Material Science and Engineering, University of Arkansas, Fayetteville, Arkansas, United States of America
PLoS ONE 6:e20765. 2011..The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems...
- On the secondary droplets of self-running gallium droplets on GaAs surfaceJiang Wu
Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
ACS Appl Mater Interfaces 3:1817-20. 2011..The scanning electron microscope also captures nanoscale footprints of secondary droplets different from the main droplets...
- Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxyJiang Wu
Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
Nano Lett 10:1512-6. 2010..Due to the intersublevel transitions from GaAs quantum dot pairs, a broadband photoresponse spectrum is observed from 3 to 8 microm with a full width at half-maximum of approximately 2.0 microm...