Jiang Wu

Summary

Affiliation: University of Arkansas
Country: USA

Publications

  1. pmc Origins of 1/f noise in nanostructure inclusion polymorphous silicon films
    Shibin Li
    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China UESTC, Chengdu 610054, China
    Nanoscale Res Lett 6:281. 2011
  2. pmc InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
    Zhenhua Li
    Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
    Nanoscale Res Lett 5:1079-84. 2010
  3. doi Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces
    Jiang Wu
    Arkansas Institute of Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
    Nanoscale 3:1485-8. 2011
  4. pmc Nanoscale footprints of self-running gallium droplets on GaAs surface
    Jiang Wu
    Arkansas Institute for Nanoscale Material Science and Engineering, University of Arkansas, Fayetteville, Arkansas, United States of America
    PLoS ONE 6:e20765. 2011
  5. ncbi On the secondary droplets of self-running gallium droplets on GaAs surface
    Jiang Wu
    Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
    ACS Appl Mater Interfaces 3:1817-20. 2011
  6. doi Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy
    Jiang Wu
    Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
    Nano Lett 10:1512-6. 2010

Collaborators

  • Zhiming M Wang
  • Shibin Li
  • Zhenhua Li
  • Zhihua Ying
  • Zhiming Wu
  • Yadong Jiang
  • Gregory Salamo
  • Wei Li
  • Shibing Li
  • Shui Qing Yu
  • Omar Manasreh
  • Gregory J Salamo
  • Dongsheng Fan
  • Aqiang Guo

Detail Information

Publications6

  1. pmc Origins of 1/f noise in nanostructure inclusion polymorphous silicon films
    Shibin Li
    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China UESTC, Chengdu 610054, China
    Nanoscale Res Lett 6:281. 2011
    ..The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature...
  2. pmc InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
    Zhenhua Li
    Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
    Nanoscale Res Lett 5:1079-84. 2010
    ..8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications...
  3. doi Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces
    Jiang Wu
    Arkansas Institute of Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
    Nanoscale 3:1485-8. 2011
    ..Long exciton decay times, over 1 ns, are also measured by time-resolved photoluminescence technique for all samples. Our results demonstrate the potential for QDs on GaAs high index substrates for wideband applications...
  4. pmc Nanoscale footprints of self-running gallium droplets on GaAs surface
    Jiang Wu
    Arkansas Institute for Nanoscale Material Science and Engineering, University of Arkansas, Fayetteville, Arkansas, United States of America
    PLoS ONE 6:e20765. 2011
    ..The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems...
  5. ncbi On the secondary droplets of self-running gallium droplets on GaAs surface
    Jiang Wu
    Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
    ACS Appl Mater Interfaces 3:1817-20. 2011
    ..The scanning electron microscope also captures nanoscale footprints of secondary droplets different from the main droplets...
  6. doi Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy
    Jiang Wu
    Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
    Nano Lett 10:1512-6. 2010
    ..Due to the intersublevel transitions from GaAs quantum dot pairs, a broadband photoresponse spectrum is observed from 3 to 8 microm with a full width at half-maximum of approximately 2.0 microm...