Zhiming M Wang

Summary

Affiliation: University of Arkansas
Country: USA

Publications

  1. ncbi request reprint Self-organization of InAs quantum-dot clusters directed by droplet homoepitaxy
    Zhiming M Wang
    Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA
    Small 3:235-8. 2007
  2. pmc Origins of 1/f noise in nanostructure inclusion polymorphous silicon films
    Shibin Li
    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China UESTC, Chengdu 610054, China
    Nanoscale Res Lett 6:281. 2011
  3. pmc Superlattice Growth via MBE and Green's Function Techniques
    Jj Ramsey
    College of Engineering, University of Akron, 302 Buchtel Common, Akron, OH, 44325, USA
    Nanoscale Res Lett 5:1272-8. 2010
  4. pmc Various Quantum- and Nano-Structures by III-V Droplet Epitaxy on GaAs Substrates
    Jh Lee
    Department of Electronic Engineering, Kwangwoon University, Nowon gu Seoul, 139 701, South Korea
    Nanoscale Res Lett 5:308-14. 2009
  5. doi request reprint Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces
    Jiang Wu
    Arkansas Institute of Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
    Nanoscale 3:1485-8. 2011
  6. pmc Nanoscale footprints of self-running gallium droplets on GaAs surface
    Jiang Wu
    Arkansas Institute for Nanoscale Material Science and Engineering, University of Arkansas, Fayetteville, Arkansas, United States of America
    PLoS ONE 6:e20765. 2011
  7. ncbi request reprint Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains
    Xiaoyong Wang
    Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
    Nano Lett 6:1847-51. 2006
  8. doi request reprint Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy
    Jiang Wu
    Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
    Nano Lett 10:1512-6. 2010
  9. ncbi request reprint On the secondary droplets of self-running gallium droplets on GaAs surface
    Jiang Wu
    Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
    ACS Appl Mater Interfaces 3:1817-20. 2011
  10. pmc Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
    Zhiming M Wang
    Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkanssas, Fayetteville, AR, 72701, USA
    Nanoscale Res Lett 5:1320-3. 2010

Collaborators

  • Jiang Wu
  • Gregory J Salamo
  • Shibin Li
  • Alvason Z Li
  • Mourad Benamara
  • Vitaliy G Dorogan
  • Yuriy I Mazur
  • Jj Ramsey
  • Zhenhua Li
  • Jh Lee
  • Xiaoyong Wang
  • Gregory Salamo
  • Zhihua Ying
  • Yadong Jiang
  • Wei Li
  • Zhiming Wu
  • M Omar Manasreh
  • Omar Manasreh
  • Eric A DeCuir
  • Shibing Li
  • Dali Shao
  • Ernian Pan
  • Shui Qing Yu
  • Peter W Chung
  • Dongsheng Fan
  • Aqiang Guo
  • Ny Kim
  • Gj Salamo
  • Sh Park
  • Es Kim
  • Chih Kang Shih
  • Baolai Liang

Detail Information

Publications11

  1. ncbi request reprint Self-organization of InAs quantum-dot clusters directed by droplet homoepitaxy
    Zhiming M Wang
    Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA
    Small 3:235-8. 2007
  2. pmc Origins of 1/f noise in nanostructure inclusion polymorphous silicon films
    Shibin Li
    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China UESTC, Chengdu 610054, China
    Nanoscale Res Lett 6:281. 2011
    ..The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature...
  3. pmc Superlattice Growth via MBE and Green's Function Techniques
    Jj Ramsey
    College of Engineering, University of Akron, 302 Buchtel Common, Akron, OH, 44325, USA
    Nanoscale Res Lett 5:1272-8. 2010
    ..This model is constructed under the assumption that diffusional anisotropy can be neglected, and thus, the results are more in agreement with results from experiments of growth of SiGe QDs than experiments involving QDs of (In,Ga)As...
  4. pmc Various Quantum- and Nano-Structures by III-V Droplet Epitaxy on GaAs Substrates
    Jh Lee
    Department of Electronic Engineering, Kwangwoon University, Nowon gu Seoul, 139 701, South Korea
    Nanoscale Res Lett 5:308-14. 2009
    ..The formation mechanism of various nanostructures can be understood in terms of intermixing, surface diffusion, and surface reconstruction...
  5. doi request reprint Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces
    Jiang Wu
    Arkansas Institute of Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
    Nanoscale 3:1485-8. 2011
    ..Long exciton decay times, over 1 ns, are also measured by time-resolved photoluminescence technique for all samples. Our results demonstrate the potential for QDs on GaAs high index substrates for wideband applications...
  6. pmc Nanoscale footprints of self-running gallium droplets on GaAs surface
    Jiang Wu
    Arkansas Institute for Nanoscale Material Science and Engineering, University of Arkansas, Fayetteville, Arkansas, United States of America
    PLoS ONE 6:e20765. 2011
    ..The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems...
  7. ncbi request reprint Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains
    Xiaoyong Wang
    Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
    Nano Lett 6:1847-51. 2006
    ..Two groups of QDs were found sitting on top of these 1D WWs and the traditional two-dimensional wetting layers, respectively, with size-dependent emission polarization anisotropies of ca. 6-25% because of their elongated shapes...
  8. doi request reprint Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy
    Jiang Wu
    Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
    Nano Lett 10:1512-6. 2010
    ..Due to the intersublevel transitions from GaAs quantum dot pairs, a broadband photoresponse spectrum is observed from 3 to 8 microm with a full width at half-maximum of approximately 2.0 microm...
  9. ncbi request reprint On the secondary droplets of self-running gallium droplets on GaAs surface
    Jiang Wu
    Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
    ACS Appl Mater Interfaces 3:1817-20. 2011
    ..The scanning electron microscope also captures nanoscale footprints of secondary droplets different from the main droplets...
  10. pmc Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
    Zhiming M Wang
    Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkanssas, Fayetteville, AR, 72701, USA
    Nanoscale Res Lett 5:1320-3. 2010
    ..By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved...
  11. pmc InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
    Zhenhua Li
    Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
    Nanoscale Res Lett 5:1079-84. 2010
    ..8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications...