Zhiming M Wang
Affiliation: University of Arkansas
- Nanoscale footprints of self-running gallium droplets on GaAs surfaceJiang Wu
Arkansas Institute for Nanoscale Material Science and Engineering, University of Arkansas, Fayetteville, Arkansas, United States of America
PLoS ONE 6:e20765. 2011..The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems...
- Self-organization of InAs quantum-dot clusters directed by droplet homoepitaxyZhiming M Wang
Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA
Small 3:235-8. 2007
- Origins of 1/f noise in nanostructure inclusion polymorphous silicon filmsShibin Li
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China UESTC, Chengdu 610054, China
Nanoscale Res Lett 6:281. 2011..The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature...
- Superlattice Growth via MBE and Green's Function TechniquesJj Ramsey
College of Engineering, University of Akron, 302 Buchtel Common, Akron, OH, 44325, USA
Nanoscale Res Lett 5:1272-8. 2010..This model is constructed under the assumption that diffusional anisotropy can be neglected, and thus, the results are more in agreement with results from experiments of growth of SiGe QDs than experiments involving QDs of (In,Ga)As...
- Various Quantum- and Nano-Structures by III-V Droplet Epitaxy on GaAs SubstratesJh Lee
Department of Electronic Engineering, Kwangwoon University, Nowon gu Seoul, 139 701, South Korea
Nanoscale Res Lett 5:308-14. 2009..The formation mechanism of various nanostructures can be understood in terms of intermixing, surface diffusion, and surface reconstruction...
- Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfacesJiang Wu
Arkansas Institute of Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
Nanoscale 3:1485-8. 2011..Long exciton decay times, over 1 ns, are also measured by time-resolved photoluminescence technique for all samples. Our results demonstrate the potential for QDs on GaAs high index substrates for wideband applications...
- Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxyJiang Wu
Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
Nano Lett 10:1512-6. 2010..Due to the intersublevel transitions from GaAs quantum dot pairs, a broadband photoresponse spectrum is observed from 3 to 8 microm with a full width at half-maximum of approximately 2.0 microm...
- Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chainsXiaoyong Wang
Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
Nano Lett 6:1847-51. 2006..Two groups of QDs were found sitting on top of these 1D WWs and the traditional two-dimensional wetting layers, respectively, with size-dependent emission polarization anisotropies of ca. 6-25% because of their elongated shapes...
- On the secondary droplets of self-running gallium droplets on GaAs surfaceJiang Wu
Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
ACS Appl Mater Interfaces 3:1817-20. 2011..The scanning electron microscope also captures nanoscale footprints of secondary droplets different from the main droplets...
- Multilayers of InGaAs Nanostructures Grown on GaAs(210) SubstratesZhiming M Wang
Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkanssas, Fayetteville, AR, 72701, USA
Nanoscale Res Lett 5:1320-3. 2010..By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved...
- InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode ApplicationsZhenhua Li
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
Nanoscale Res Lett 5:1079-84. 2010..8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications...