Molly Piels

Summary

Affiliation: University of California
Country: USA

Publications

  1. doi request reprint Nonlinear modeling of waveguide photodetectors
    Molly Piels
    Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
    Opt Express 21:15634-44. 2013
  2. doi request reprint Si/Ge uni-traveling carrier photodetector
    Molly Piels
    Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
    Opt Express 20:7488-95. 2012
  3. doi request reprint Measurement of intermodulation distortion in high-linearity photodiodes
    Anand Ramaswamy
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA
    Opt Express 18:2317-24. 2010
  4. ncbi request reprint High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode
    Zhi Li
    Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA
    Opt Express 19:B385-90. 2011

Collaborators

  • Huapu Pan
  • Zhi Li
  • John E Bowers
  • Anand Ramaswamy
  • Andreas Beling
  • Yang Fu
  • Joe C Campbell
  • Keith J Williams
  • Jonathan Klamkin
  • A Hastings
  • Nobuhiro Nunoya
  • Larry A Coldren
  • Leif A Johansson

Detail Information

Publications4

  1. doi request reprint Nonlinear modeling of waveguide photodetectors
    Molly Piels
    Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
    Opt Express 21:15634-44. 2013
    ..The technique is then used to provide guidance for the future design of linear waveguide-based photodetectors. ..
  2. doi request reprint Si/Ge uni-traveling carrier photodetector
    Molly Piels
    Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
    Opt Express 20:7488-95. 2012
    ..The device has a bandwidth of 20GHz, a large-signal 1dB saturation photocurrent of 20mA at -3V, and a low thermal impedance of 520K/W...
  3. doi request reprint Measurement of intermodulation distortion in high-linearity photodiodes
    Anand Ramaswamy
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA
    Opt Express 18:2317-24. 2010
    ....
  4. ncbi request reprint High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode
    Zhi Li
    Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA
    Opt Express 19:B385-90. 2011
    ..75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias...