Molly Piels

Summary

Affiliation: University of California
Country: USA

Publications

  1. doi Nonlinear modeling of waveguide photodetectors
    Molly Piels
    Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
    Opt Express 21:15634-44. 2013
  2. doi Si/Ge uni-traveling carrier photodetector
    Molly Piels
    Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
    Opt Express 20:7488-95. 2012
  3. doi Measurement of intermodulation distortion in high-linearity photodiodes
    Anand Ramaswamy
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA
    Opt Express 18:2317-24. 2010
  4. ncbi High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode
    Zhi Li
    Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA
    Opt Express 19:B385-90. 2011

Collaborators

  • Huapu Pan
  • Zhi Li
  • John E Bowers
  • Anand Ramaswamy
  • Andreas Beling
  • Joe C Campbell
  • Yang Fu
  • Jonathan Klamkin
  • Nobuhiro Nunoya
  • Keith J Williams
  • Larry A Coldren
  • Leif A Johansson
  • A Hastings

Detail Information

Publications4

  1. doi Nonlinear modeling of waveguide photodetectors
    Molly Piels
    Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
    Opt Express 21:15634-44. 2013
    ..The technique is then used to provide guidance for the future design of linear waveguide-based photodetectors. ..
  2. doi Si/Ge uni-traveling carrier photodetector
    Molly Piels
    Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
    Opt Express 20:7488-95. 2012
    ..The device has a bandwidth of 20GHz, a large-signal 1dB saturation photocurrent of 20mA at -3V, and a low thermal impedance of 520K/W...
  3. doi Measurement of intermodulation distortion in high-linearity photodiodes
    Anand Ramaswamy
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA
    Opt Express 18:2317-24. 2010
    ....
  4. ncbi High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode
    Zhi Li
    Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA
    Opt Express 19:B385-90. 2011
    ..75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias...