Huapu Pan

Summary

Affiliation: University of Virginia
Country: USA

Publications

  1. doi request reprint Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber
    Huapu Pan
    Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA
    Opt Express 17:20221-6. 2009
  2. ncbi request reprint High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode
    Zhi Li
    Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA
    Opt Express 19:B385-90. 2011

Collaborators

  • Molly Piels
  • Zhi Li
  • Andreas Beling
  • John E Bowers
  • Joe C Campbell
  • Yang Fu

Detail Information

Publications2

  1. doi request reprint Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber
    Huapu Pan
    Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA
    Opt Express 17:20221-6. 2009
    ..The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model...
  2. ncbi request reprint High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode
    Zhi Li
    Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA
    Opt Express 19:B385-90. 2011
    ..75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias...