Max G Lagally

Summary

Affiliation: University of Wisconsin
Country: USA

Publications

  1. pmc Nanomembrane-based materials for Group IV semiconductor quantum electronics
    D M Paskiewicz
    1 Department of Materials Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706 USA 2
    Sci Rep 4:4218. 2014
  2. pmc Semiconductor nanomembranes: a platform for new properties via strain engineering
    Francesca Cavallo
    University of Wisconsin Madison, Madison, WI, 53706, USA
    Nanoscale Res Lett 7:628. 2012
  3. pmc Translation and manipulation of silicon nanomembranes using holographic optical tweezers
    Stefan M Oehrlein
    University of Wisconsin, Madison, WI 53706, USA
    Nanoscale Res Lett 6:507. 2011
  4. pmc Influence of surface properties on the electrical conductivity of silicon nanomembranes
    Xiangfu Zhao
    University of Wisconsin Madison, Madison WI 53706, USA
    Nanoscale Res Lett 6:402. 2011
  5. pmc Fabrication of ultrahigh-density nanowires by electrochemical nanolithography
    Feng Chen
    University of Wisconsin Madison, Madison, WI 53706, USA
    Nanoscale Res Lett 6:444. 2011
  6. ncbi request reprint Influence of surface chemical modification on charge transport properties in ultrathin silicon membranes
    Shelley A Scott
    University of Wisconsin Madison, Madison, Wisconsin 53706
    ACS Nano 3:1683-92. 2009
  7. doi request reprint Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes
    Weina Peng
    Department of Physics, University of Wisconsin Madison, 1150 University Avenue, Madison, Wisconsin 53706, USA
    Nat Commun 4:1339. 2013
  8. doi request reprint Neurite guidance and three-dimensional confinement via compliant semiconductor scaffolds
    Francesca Cavallo
    University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    ACS Nano 8:12219-27. 2014
  9. pmc Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
    Jose R Sanchez-Perez
    Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706, USA
    Proc Natl Acad Sci U S A 108:18893-8. 2011
  10. doi request reprint Nanomechanical architecture of semiconductor nanomembranes
    Minghuang Huang
    University of Wisconsin Madison, Madison, WI 53706, USA
    Nanoscale 3:96-120. 2011

Collaborators

  • Francesca Cavallo
  • Yu Huang
  • Feng Liu
  • Mark C Hersam
  • Nathan P Guisinger
  • Yu Zhang
  • Minghuang Huang
  • Minrui Yu
  • Deborah M Paskiewicz
  • Arnold M Kiefer
  • Feng Chen
  • Donald E Savage
  • Shelley A Scott
  • Weina Peng
  • Hongquan Jiang
  • George K Celler
  • Jose R Sanchez-Perez
  • Irena Knezevic
  • Robert M Jacobberger
  • D M Paskiewicz
  • Pornsatit Sookchoo
  • Han Zhou
  • Faisal F Sudradjat
  • Roberto Paiella
  • Frank S Flack
  • Stefan M Oehrlein
  • Xiangfu Zhao
  • Anna M Clausen
  • Mark A Eriksson
  • Bingjun Ding
  • Patrick Desjardins
  • Paul G Evans
  • Michael S Arnold
  • Andrew Mannix
  • Pierre L Levesque
  • Richard Martel
  • Gerald J Brady
  • Brian Kiraly
  • Susmit Singha Roy
  • Kyle M McElhinny
  • Richard Rojas Delgado
  • Matthieu Fortin-DeschĂȘnes
  • P G Evans
  • M V Holt
  • D E Savage
  • Ye Zhu
  • Paul M Voyles
  • Weidong Zhou
  • Jung Hun Seo
  • Zlatan Aksamija
  • Habibe Durmaz
  • Zhenqiang Ma
  • James J Endres
  • Boy Tanto
  • Richard A Soref
  • Ryan J Kershner
  • Yuk Hong Ting
  • Amy E Wendt
  • Rb Jacobson
  • Walter R Buchwald
  • R B Jacobson
  • Cicek Boztug
  • Franz J Himpsel
  • Edwin B Ramayya
  • Ferencz S Denes
  • Chanan Euaruksakul

Detail Information

Publications22

  1. pmc Nanomembrane-based materials for Group IV semiconductor quantum electronics
    D M Paskiewicz
    1 Department of Materials Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706 USA 2
    Sci Rep 4:4218. 2014
    ..Significant structural improvements are found using SiGe nanomembranes. ..
  2. pmc Semiconductor nanomembranes: a platform for new properties via strain engineering
    Francesca Cavallo
    University of Wisconsin Madison, Madison, WI, 53706, USA
    Nanoscale Res Lett 7:628. 2012
    ..Conversely, large-enough externally applied strain can make Ge a direct-band gap semiconductor, giving promise for Group IV element light sources...
  3. pmc Translation and manipulation of silicon nanomembranes using holographic optical tweezers
    Stefan M Oehrlein
    University of Wisconsin, Madison, WI 53706, USA
    Nanoscale Res Lett 6:507. 2011
    ..Using as few as one trap and trapping powers as low as several hundred milliwatts, silicon nanomembranes can be rotated and translated in a solution over large distances...
  4. pmc Influence of surface properties on the electrical conductivity of silicon nanomembranes
    Xiangfu Zhao
    University of Wisconsin Madison, Madison WI 53706, USA
    Nanoscale Res Lett 6:402. 2011
    ..X-ray photoelectron spectroscopy measurements are consistent with the electrical-conductivity results. We pinpoint the likely cause of the differences.PACS: 73.63.-b, 62.23.Kn, 73.40.Ty...
  5. pmc Fabrication of ultrahigh-density nanowires by electrochemical nanolithography
    Feng Chen
    University of Wisconsin Madison, Madison, WI 53706, USA
    Nanoscale Res Lett 6:444. 2011
    ..We demonstrate this method on Si/SiGe multilayer superlattices using electrochemical nanopatterning and plasma etching to obtain high-density Si/SiGe multilayer superlattice nanowires...
  6. ncbi request reprint Influence of surface chemical modification on charge transport properties in ultrathin silicon membranes
    Shelley A Scott
    University of Wisconsin Madison, Madison, Wisconsin 53706
    ACS Nano 3:1683-92. 2009
    ..We explain this behavior in terms of surface-induced band structure changes combined with the effective isolation from bulk properties created by crystal thinness...
  7. doi request reprint Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes
    Weina Peng
    Department of Physics, University of Wisconsin Madison, 1150 University Avenue, Madison, Wisconsin 53706, USA
    Nat Commun 4:1339. 2013
    ....
  8. doi request reprint Neurite guidance and three-dimensional confinement via compliant semiconductor scaffolds
    Francesca Cavallo
    University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    ACS Nano 8:12219-27. 2014
    ....
  9. pmc Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
    Jose R Sanchez-Perez
    Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706, USA
    Proc Natl Acad Sci U S A 108:18893-8. 2011
    ....
  10. doi request reprint Nanomechanical architecture of semiconductor nanomembranes
    Minghuang Huang
    University of Wisconsin Madison, Madison, WI 53706, USA
    Nanoscale 3:96-120. 2011
    ..We also describe several materials properties of nanomechanical architectures. We discuss potential applications of nanomembrane technology to implement simple and hybrid functionalities...
  11. ncbi request reprint Symmetry in strain engineering of nanomembranes: making new strained materials
    Deborah M Paskiewicz
    University of Wisconsin, Madison, Wisconsin 53706, USA
    ACS Nano 5:5532-42. 2011
    ..We are thus able to make uniformly strained materials that cannot be made any other way...
  12. doi request reprint "Soft Si": effective stiffness of supported crystalline nanomembranes
    Francesca Cavallo
    University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    ACS Nano 5:5400-7. 2011
    ....
  13. doi request reprint Strain engineered SiGe multiple-quantum-well nanomembranes for far-infrared intersubband device applications
    Pornsatit Sookchoo
    University of Wisconsin Madison, Madison, Wisconsin 53706, United States
    ACS Nano 7:2326-34. 2013
    ....
  14. ncbi request reprint Quantum confinement, surface roughness, and the conduction band structure of ultrathin silicon membranes
    Feng Chen
    University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    ACS Nano 4:2466-74. 2010
    ..The measured dependence of the sub-band splitting and the shift of their weighted average on degree of confinement is in excellent agreement with theory, for both Si(001) and Si(110)...
  15. pmc Semiconductor nanomembrane tubes: three-dimensional confinement for controlled neurite outgrowth
    Minrui Yu
    Department of Electrical and Computer Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    ACS Nano 5:2447-57. 2011
    ....
  16. doi request reprint Exceptional charge transport properties of graphene on germanium
    Francesca Cavallo
    University of Wisconsin Madison, Madison, Wisconsin 53706, United States
    ACS Nano 8:10237-45. 2014
    ..These values are close to the theoretical limit for doped graphene. Carrier densities in the graphene are as high as 10(14) cm(-2) at 300 K. ..
  17. pmc Fast flexible electronics with strained silicon nanomembranes
    Han Zhou
    Department of Electrical and Computer Engineering, University of Wisconsin Madison, Madison, WI 53706, USA
    Sci Rep 3:1291. 2013
    ..We demonstrate a new speed record of Si-based flexible electronics without using aggressively scaled critical device dimensions...
  18. ncbi request reprint Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering
    Deborah M Paskiewicz
    University of Wisconsin, Madison, Wisconsin 53706, USA
    ACS Nano 5:5814-22. 2011
    ..We confirm the high structural quality of these new materials and demonstrate their use as substrates for technologically relevant epitaxial films by growing strained-Si layers and thick, lattice-matched SiGe alloy layers on them...
  19. ncbi request reprint Si/Ge junctions formed by nanomembrane bonding
    Arnold M Kiefer
    University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    ACS Nano 5:1179-89. 2011
    ..Both the Si and the Ge maintain a high degree of crystallinity. The junction is highly conductive. The nonlinear transport behavior is fit with a tunneling model, and the bonding behavior is explained with nanomembrane mechanics...
  20. doi request reprint Direct oriented growth of armchair graphene nanoribbons on germanium
    Robert M Jacobberger
    Department of Materials Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    Nat Commun 6:8006. 2015
    ..This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits. ..
  21. doi request reprint New strategy for synthesis and functionalization of carbon nanoparticles
    Hongquan Jiang
    Department of Material Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    Langmuir 26:1991-5. 2010
    ..XPS, TG/DTG, FTIR, and fluorescence tests confirm the viability of this new amination process. The nanoparticles are small and relatively uniformly sized. Their dispersibility in aqueous solution is significant...
  22. ncbi request reprint Mechano-electronic superlattices in silicon nanoribbons
    Minghuang Huang
    Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706, USA
    ACS Nano 3:721-7. 2009
    ..We predict that it is possible to observe discrete minibands in Si nanoribbons at room temperature if nanostressors of a different material are grown...