Affiliation: University of California
- Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit DislocationsA Jallipalli
Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA, 90095, USA
Nanoscale Res Lett 4:1458-62. 2009..5%) relaxed with very low density of threading dislocations (105 cm-2), while GaSb deposited using non-IMF growth is compressively strained and has a higher average density of threading dislocations (>109 cm-2)...