Hui Wen Chen

Summary

Affiliation: University of California
Country: USA

Publications

  1. ncbi request reprint High speed hybrid silicon evanescent Mach-Zehnder modulator and switch
    Hui Wen Chen
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA
    Opt Express 16:20571-6. 2008
  2. doi request reprint 25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode
    Hui Wen Chen
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA
    Opt Express 18:1070-5. 2010
  3. ncbi request reprint High speed hybrid silicon evanescent electroabsorption modulator
    Ying hao Kuo
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA
    Opt Express 16:9936-41. 2008
  4. doi request reprint Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp
    Hui Wen Chen
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA
    Opt Express 19:1455-60. 2011
  5. doi request reprint 50 Gb/s hybrid silicon traveling-wave electroabsorption modulator
    Yongbo Tang
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA
    Opt Express 19:5811-6. 2011
  6. ncbi request reprint Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product
    Wissem Sfar Zaoui
    University of California Santa Barbara, ECE Department, Santa Barbara, CA 93106, USA
    Opt Express 17:12641-9. 2009

Collaborators

  • Ying hao Kuo
  • Yongbo Tang
  • Wissem Sfar Zaoui
  • Yimin Kang
  • Alexandre Pauchard
  • Mike Morse
  • John E Bowers
  • Mario J Paniccia
  • Joe C Campbell

Detail Information

Publications6

  1. ncbi request reprint High speed hybrid silicon evanescent Mach-Zehnder modulator and switch
    Hui Wen Chen
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA
    Opt Express 16:20571-6. 2008
    ..The modulator utilizes carrier depletion within AlGaInAs quantum wells to obtain V(pi) L of 2 V-mm and clear open eye at 10 Gb/s. The switch exhibits a power penalty of 0.5 dB for all ports at 10 Gb/s modulation...
  2. doi request reprint 25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode
    Hui Wen Chen
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA
    Opt Express 18:1070-5. 2010
    ..The modulator has voltage-length product of 2.4 V-mm while the switch has switch time less than 35 ps and crosstalk smaller than -12 dB...
  3. ncbi request reprint High speed hybrid silicon evanescent electroabsorption modulator
    Ying hao Kuo
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA
    Opt Express 16:9936-41. 2008
    ..The hybrid silicon evanescent electroabsorption modulator with offset AlGaInAs quantum wells has an extinction ratio over 10 dB and modulation bandwidth of 10 GHz. The modulator has a clean open eye at 10 Gb/s with sub-volt drive...
  4. doi request reprint Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp
    Hui Wen Chen
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA
    Opt Express 19:1455-60. 2011
    ..4 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm and chirp of -0.75 over the entire bias range. As a switch, it has a switching time less than 20 ps...
  5. doi request reprint 50 Gb/s hybrid silicon traveling-wave electroabsorption modulator
    Yongbo Tang
    Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA
    Opt Express 19:5811-6. 2011
    ..8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits...
  6. ncbi request reprint Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product
    Wissem Sfar Zaoui
    University of California Santa Barbara, ECE Department, Santa Barbara, CA 93106, USA
    Opt Express 17:12641-9. 2009
    ....