Gary Shambat

Summary

Affiliation: Stanford University
Country: USA

Publications

  1. doi request reprint Coupled fiber taper extraction of 1.53 microm photoluminescence from erbium doped silicon nitride photonic crystal cavities
    Gary Shambat
    Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
    Opt Express 18:5964-73. 2010
  2. doi request reprint Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator
    Gary Shambat
    Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
    Opt Express 19:7530-6. 2011
  3. doi request reprint Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode
    Gary Shambat
    Department of Electrical Engineering, Stanford University, Stanford, California 94305 USA
    Nat Commun 2:539. 2011
  4. ncbi request reprint Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate
    Szu Lin Cheng
    Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
    Opt Express 17:10019-24. 2009

Detail Information

Publications4

  1. doi request reprint Coupled fiber taper extraction of 1.53 microm photoluminescence from erbium doped silicon nitride photonic crystal cavities
    Gary Shambat
    Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
    Opt Express 18:5964-73. 2010
    ..This material system combined with fiber taper collection is promising for building on-chip optical amplifiers...
  2. doi request reprint Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator
    Gary Shambat
    Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
    Opt Express 19:7530-6. 2011
    ..Speeds of up to 1 GHz are demonstrated with photoluminescence lifetime measurements revealing that the ultimate limit goes well into the tens of GHz...
  3. doi request reprint Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode
    Gary Shambat
    Department of Electrical Engineering, Stanford University, Stanford, California 94305 USA
    Nat Commun 2:539. 2011
    ..The demonstrated device is a major step forward in providing practical low-power and integrable sources for on-chip photonics...
  4. ncbi request reprint Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate
    Szu Lin Cheng
    Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
    Opt Express 17:10019-24. 2009
    ..These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device...