Szu Lin Cheng

Summary

Affiliation: Stanford University
Country: USA

Publications

  1. ncbi request reprint Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate
    Szu Lin Cheng
    Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
    Opt Express 17:10019-24. 2009
  2. doi request reprint Strained germanium thin film membrane on silicon substrate for optoelectronics
    Donguk Nam
    Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
    Opt Express 19:25866-72. 2011

Collaborators

  • Jesse Lu
  • Gary Shambat
  • Donguk Nam
  • Devanand Sukhdeo
  • Mark Brongersma
  • Krishna Balram
  • Arunanshu Roy
  • Ze Yuan
  • Krishna Saraswat
  • Yoshio Nishi
  • Kevin Chih Yao Huang
  • David Miller

Detail Information

Publications2

  1. ncbi request reprint Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate
    Szu Lin Cheng
    Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
    Opt Express 17:10019-24. 2009
    ..These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device...
  2. doi request reprint Strained germanium thin film membrane on silicon substrate for optoelectronics
    Donguk Nam
    Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
    Opt Express 19:25866-72. 2011
    ..We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um...