Szu Lin Cheng

Summary

Affiliation: Stanford University
Country: USA

Publications

  1. ncbi Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate
    Szu Lin Cheng
    Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
    Opt Express 17:10019-24. 2009
  2. ncbi Strained germanium thin film membrane on silicon substrate for optoelectronics
    Donguk Nam
    Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
    Opt Express 19:25866-72. 2011

Collaborators

  • Jesse Lu
  • Gary Shambat
  • Donguk Nam
  • David Miller
  • Mark Brongersma
  • Krishna Balram
  • Yoshio Nishi
  • Krishna Saraswat
  • Arunanshu Roy
  • Kevin Chih Yao Huang
  • Ze Yuan
  • Devanand Sukhdeo

Detail Information

Publications2

  1. ncbi Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate
    Szu Lin Cheng
    Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
    Opt Express 17:10019-24. 2009
    ..These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device...
  2. ncbi Strained germanium thin film membrane on silicon substrate for optoelectronics
    Donguk Nam
    Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
    Opt Express 19:25866-72. 2011
    ..We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um...