- Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrateSzu Lin Cheng
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
Opt Express 17:10019-24. 2009..These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device...
- Strained germanium thin film membrane on silicon substrate for optoelectronicsDonguk Nam
Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Opt Express 19:25866-72. 2011..We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um...