David W Parent

Summary

Affiliation: San Jose State University
Country: USA

Publications

  1. doi request reprint Hafnium transistor design for neural interfacing
    David W Parent
    SJSU, USA
    Conf Proc IEEE Eng Med Biol Soc 2008:3356-9. 2008
  2. doi request reprint Hafnium transistor process design for neural interfacing
    David W Parent
    SJSU
    Conf Proc IEEE Eng Med Biol Soc 2009:5875-8. 2009
  3. doi request reprint High-k dielectric fabrication process to minimize mobile ionic penetration
    David W Parent
    SJSU, USA
    Conf Proc IEEE Eng Med Biol Soc 2010:3507-10. 2010

Collaborators

Detail Information

Publications3

  1. doi request reprint Hafnium transistor design for neural interfacing
    David W Parent
    SJSU, USA
    Conf Proc IEEE Eng Med Biol Soc 2008:3356-9. 2008
    ..An additional benefit is that the MIS capacitor can be employed to test additional performance parameters important to an open gate transistor such as dielectric stability and ionic penetration...
  2. doi request reprint Hafnium transistor process design for neural interfacing
    David W Parent
    SJSU
    Conf Proc IEEE Eng Med Biol Soc 2009:5875-8. 2009
    ..Hafnium oxide films (HfO) were grown and characterized for dielectric constant and fixed oxide charge for various annealing temperatures, two important design variables in threshold voltage design...
  3. doi request reprint High-k dielectric fabrication process to minimize mobile ionic penetration
    David W Parent
    SJSU, USA
    Conf Proc IEEE Eng Med Biol Soc 2010:3507-10. 2010
    ..The relative effective dielectric constant of the hafnium oxide layer and SiO(2) interfacial layer was 10.5, while the relative dielectric constant of the hafnium oxide layer was 18...