- Hafnium transistor design for neural interfacingDavid W Parent
Conf Proc IEEE Eng Med Biol Soc 2008:3356-9. 2008..An additional benefit is that the MIS capacitor can be employed to test additional performance parameters important to an open gate transistor such as dielectric stability and ionic penetration...
- Hafnium transistor process design for neural interfacingDavid W Parent
Conf Proc IEEE Eng Med Biol Soc 2009:5875-8. 2009..Hafnium oxide films (HfO) were grown and characterized for dielectric constant and fixed oxide charge for various annealing temperatures, two important design variables in threshold voltage design...
- High-k dielectric fabrication process to minimize mobile ionic penetrationDavid W Parent
Conf Proc IEEE Eng Med Biol Soc 2010:3507-10. 2010..The relative effective dielectric constant of the hafnium oxide layer and SiO(2) interfacial layer was 10.5, while the relative dielectric constant of the hafnium oxide layer was 18...