Joshua A Robinson

Summary

Affiliation: Pennsylvania State University
Country: USA

Publications

  1. ncbi Raman topography and strain uniformity of large-area epitaxial graphene
    Joshua A Robinson
    Electro Optics Center, Materials Research Institute, and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    Nano Lett 9:964-8. 2009
  2. ncbi Epitaxial graphene transistors: enhancing performance via hydrogen intercalation
    Joshua A Robinson
    Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3875-80. 2011
  3. ncbi Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene
    Matthew J Hollander
    Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3601-7. 2011
  4. ncbi Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition
    Mark A Fanton
    The Electro Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Nano 5:8062-9. 2011

Collaborators

  • Matthew J Hollander
  • Mark A Fanton
  • Michael Labella
  • David W Snyder
  • Conor Puls
  • Kathleen A Trumbull
  • Richard Kasarda
  • Suman Datta
  • Casey Howsare
  • MICHAEL ZHU
  • Zachary R Hughes
  • Kathleen Trumbull
  • Xiaojun Wang
  • Euichul Hwang
  • Randal Cavalero
  • Joseph Stitt
  • Brian E Weiland
  • Ying Liu

Detail Information

Publications4

  1. ncbi Raman topography and strain uniformity of large-area epitaxial graphene
    Joshua A Robinson
    Electro Optics Center, Materials Research Institute, and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    Nano Lett 9:964-8. 2009
    ..We show that graphene strain can vary over a distance shorter than 300 nm and may be uniform only over roughly 1 microm. We show that nearly strain-free graphene is possible even in epitaxial graphene...
  2. ncbi Epitaxial graphene transistors: enhancing performance via hydrogen intercalation
    Joshua A Robinson
    Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3875-80. 2011
    ..Finally, we report a 10× improvement in the extrinsic current gain response of graphene transistors with optimal extrinsic current-gain cutoff frequencies of 24 GHz...
  3. ncbi Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene
    Matthew J Hollander
    Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3601-7. 2011
    ..The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport...
  4. ncbi Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition
    Mark A Fanton
    The Electro Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Nano 5:8062-9. 2011
    ..Field effect transistors fabricated from this material had a typical current density of 200 mA/mm and transconductance of 40 mS/mm indicating that material performance may be comparable to graphene on SiC...