Joshua A Robinson

Summary

Affiliation: Pennsylvania State University
Country: USA

Publications

  1. ncbi request reprint Raman topography and strain uniformity of large-area epitaxial graphene
    Joshua A Robinson
    Electro Optics Center, Materials Research Institute, and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    Nano Lett 9:964-8. 2009
  2. ncbi request reprint Epitaxial graphene transistors: enhancing performance via hydrogen intercalation
    Joshua A Robinson
    Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3875-80. 2011
  3. doi request reprint Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices
    Michael S Bresnehan
    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    ACS Nano 6:5234-41. 2012
  4. ncbi request reprint Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene
    Matthew J Hollander
    Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3601-7. 2011
  5. ncbi request reprint Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition
    Mark A Fanton
    The Electro Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Nano 5:8062-9. 2011

Collaborators

  • Ying Liu
  • Matthew J Hollander
  • David W Snyder
  • Michael Labella
  • Michael S Bresnehan
  • Randal Cavalero
  • Kathleen A Trumbull
  • Mark A Fanton
  • Maxwell Wetherington
  • Joseph Stitt
  • Conor Puls
  • Suman Datta
  • Xiaojun Wang
  • Brian E Weiland
  • Kathleen Trumbull
  • Richard Kasarda
  • Casey Howsare
  • MICHAEL ZHU
  • Zachary R Hughes
  • Euichul Hwang

Detail Information

Publications5

  1. ncbi request reprint Raman topography and strain uniformity of large-area epitaxial graphene
    Joshua A Robinson
    Electro Optics Center, Materials Research Institute, and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    Nano Lett 9:964-8. 2009
    ..We show that graphene strain can vary over a distance shorter than 300 nm and may be uniform only over roughly 1 microm. We show that nearly strain-free graphene is possible even in epitaxial graphene...
  2. ncbi request reprint Epitaxial graphene transistors: enhancing performance via hydrogen intercalation
    Joshua A Robinson
    Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3875-80. 2011
    ..Finally, we report a 10× improvement in the extrinsic current gain response of graphene transistors with optimal extrinsic current-gain cutoff frequencies of 24 GHz...
  3. doi request reprint Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices
    Michael S Bresnehan
    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    ACS Nano 6:5234-41. 2012
    ..Graphene transistors utilizing h-BN gates exhibit peak intrinsic cutoff frequencies >30 GHz (2.4× that of HfO(2)-based devices)...
  4. ncbi request reprint Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene
    Matthew J Hollander
    Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3601-7. 2011
    ..The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport...
  5. ncbi request reprint Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition
    Mark A Fanton
    The Electro Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Nano 5:8062-9. 2011
    ..Field effect transistors fabricated from this material had a typical current density of 200 mA/mm and transconductance of 40 mS/mm indicating that material performance may be comparable to graphene on SiC...