Joshua A Robinson
Affiliation: Pennsylvania State University
- Raman topography and strain uniformity of large-area epitaxial grapheneJoshua A Robinson
Electro Optics Center, Materials Research Institute, and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Nano Lett 9:964-8. 2009..We show that graphene strain can vary over a distance shorter than 300 nm and may be uniform only over roughly 1 microm. We show that nearly strain-free graphene is possible even in epitaxial graphene...
- Epitaxial graphene transistors: enhancing performance via hydrogen intercalationJoshua A Robinson
Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
Nano Lett 11:3875-80. 2011..Finally, we report a 10× improvement in the extrinsic current gain response of graphene transistors with optimal extrinsic current-gain cutoff frequencies of 24 GHz...
- Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devicesMichael S Bresnehan
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
ACS Nano 6:5234-41. 2012..Graphene transistors utilizing h-BN gates exhibit peak intrinsic cutoff frequencies >30 GHz (2.4× that of HfO(2)-based devices)...
- Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial grapheneMatthew J Hollander
Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
Nano Lett 11:3601-7. 2011..The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport...
- Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor depositionMark A Fanton
The Electro Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
ACS Nano 5:8062-9. 2011..Field effect transistors fabricated from this material had a typical current density of 200 mA/mm and transconductance of 40 mS/mm indicating that material performance may be comparable to graphene on SiC...