Joshua A Robinson

Summary

Affiliation: Pennsylvania State University
Country: USA

Publications

  1. doi request reprint Large-scale synthesis and functionalization of hexagonal boron nitride nanosheets
    Ganesh R Bhimanapati
    Center for 2 Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16803, USA
    Nanoscale 6:11671-5. 2014
  2. ncbi request reprint Raman topography and strain uniformity of large-area epitaxial graphene
    Joshua A Robinson
    Electro Optics Center, Materials Research Institute, and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    Nano Lett 9:964-8. 2009
  3. ncbi request reprint Epitaxial graphene transistors: enhancing performance via hydrogen intercalation
    Joshua A Robinson
    Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3875-80. 2011
  4. doi request reprint Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices
    Michael S Bresnehan
    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    ACS Nano 6:5234-41. 2012
  5. doi request reprint Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers
    Michael S Bresnehan
    Department of Materials Science and Engineering, Electro Optics Center, Center for 2 Dimensional and Layered Materials, Materials Research Institute, and Department of Chemical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Appl Mater Interfaces 6:16755-62. 2014
  6. doi request reprint Electrically driven reversible insulator-metal phase transition in 1T-TaS2
    Matthew J Hollander
    Electrical Engineering Department, Materials Science and Engineering Department, and Center for 2 Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 15:1861-6. 2015
  7. ncbi request reprint Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene
    Matthew J Hollander
    Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3601-7. 2011
  8. ncbi request reprint Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition
    Mark A Fanton
    The Electro Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Nano 5:8062-9. 2011

Collaborators

  • Yu Liu
  • Ke Wang
  • Matthew J Hollander
  • Michael S Bresnehan
  • David W Snyder
  • Ganesh R Bhimanapati
  • Michael Labella
  • Suman Datta
  • Randal Cavalero
  • Kathleen A Trumbull
  • Mark A Fanton
  • Li jun Li
  • Wen jian Lu
  • Yu Ping Sun
  • Daniel Kozuch
  • Maxwell Wetherington
  • Kathleen Trumbull
  • Zachary R Hughes
  • Joseph Stitt
  • Richard Kasarda
  • Euichul Hwang
  • Conor Puls
  • Casey Howsare
  • Brian E Weiland
  • Xiaojun Wang
  • MICHAEL ZHU

Detail Information

Publications8

  1. doi request reprint Large-scale synthesis and functionalization of hexagonal boron nitride nanosheets
    Ganesh R Bhimanapati
    Center for 2 Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16803, USA
    Nanoscale 6:11671-5. 2014
    ..The exfoliated hBN nanosheets were crystalline as confirmed from X-ray diffraction and they also exhibited an optically active defect related to sulfur functionalization at 320 nm (3.9 ± 0.1 eV). ..
  2. ncbi request reprint Raman topography and strain uniformity of large-area epitaxial graphene
    Joshua A Robinson
    Electro Optics Center, Materials Research Institute, and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    Nano Lett 9:964-8. 2009
    ..We show that graphene strain can vary over a distance shorter than 300 nm and may be uniform only over roughly 1 microm. We show that nearly strain-free graphene is possible even in epitaxial graphene...
  3. ncbi request reprint Epitaxial graphene transistors: enhancing performance via hydrogen intercalation
    Joshua A Robinson
    Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3875-80. 2011
    ..Finally, we report a 10× improvement in the extrinsic current gain response of graphene transistors with optimal extrinsic current-gain cutoff frequencies of 24 GHz...
  4. doi request reprint Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices
    Michael S Bresnehan
    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
    ACS Nano 6:5234-41. 2012
    ..Graphene transistors utilizing h-BN gates exhibit peak intrinsic cutoff frequencies >30 GHz (2.4× that of HfO(2)-based devices)...
  5. doi request reprint Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers
    Michael S Bresnehan
    Department of Materials Science and Engineering, Electro Optics Center, Center for 2 Dimensional and Layered Materials, Materials Research Institute, and Department of Chemical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Appl Mater Interfaces 6:16755-62. 2014
    ....
  6. doi request reprint Electrically driven reversible insulator-metal phase transition in 1T-TaS2
    Matthew J Hollander
    Electrical Engineering Department, Materials Science and Engineering Department, and Center for 2 Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 15:1861-6. 2015
    ..These results suggest that the transition is facilitated by a carrier driven collapse of the Mott gap in 1T-TaS2, which results in fast (3 ns) switching. ..
  7. ncbi request reprint Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene
    Matthew J Hollander
    Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    Nano Lett 11:3601-7. 2011
    ..The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport...
  8. ncbi request reprint Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition
    Mark A Fanton
    The Electro Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
    ACS Nano 5:8062-9. 2011
    ..Field effect transistors fabricated from this material had a typical current density of 200 mA/mm and transconductance of 40 mS/mm indicating that material performance may be comparable to graphene on SiC...