Xiaochen Sun

Summary

Affiliation: Massachusetts Institute of Technology
Country: USA

Publications

  1. ncbi request reprint Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
    Xiaochen Sun
    Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
    Opt Lett 34:1198-200. 2009
  2. doi request reprint Ge-on-Si laser operating at room temperature
    Jifeng Liu
    MIT Microphotonics Center, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
    Opt Lett 35:679-81. 2010
  3. ncbi request reprint Direct-gap optical gain of Ge on Si at room temperature
    Jifeng Liu
    Department of Materials Science and Engineering, Microphotonics Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
    Opt Lett 34:1738-40. 2009
  4. doi request reprint Cavity-enhanced multispectral photodetector using phase-tuned propagation: theory and design
    Jianfei Wang
    Microphotonics Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
    Opt Lett 35:742-4. 2010

Collaborators

  • Jifeng Liu
  • Lionel C Kimerling
  • Jianfei Wang
  • Jurgen Michel
  • Anu Agarwal
  • Rodolfo Camacho Aguilera
  • Juejun Hu

Detail Information

Publications4

  1. ncbi request reprint Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
    Xiaochen Sun
    Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
    Opt Lett 34:1198-200. 2009
    ..These results indicate a promising future of tensile-strained Ge-on-Si for electrically pumped, monolithically integrated light emitters on Si...
  2. doi request reprint Ge-on-Si laser operating at room temperature
    Jifeng Liu
    MIT Microphotonics Center, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
    Opt Lett 35:679-81. 2010
    ..The emission exhibited a gain spectrum of 1590-1610 nm, line narrowing and polarization evolution from a mixed TE/TM to predominantly TE with increasing gain, and a clear threshold behavior...
  3. ncbi request reprint Direct-gap optical gain of Ge on Si at room temperature
    Jifeng Liu
    Department of Materials Science and Engineering, Microphotonics Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
    Opt Lett 34:1738-40. 2009
    ..This experimental result confirms that the band-engineered Ge on Si is a promising gain medium for monolithic lasers on Si...
  4. doi request reprint Cavity-enhanced multispectral photodetector using phase-tuned propagation: theory and design
    Jianfei Wang
    Microphotonics Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
    Opt Lett 35:742-4. 2010
    ..The intrinsic design versatility and scalability, as well as process compatibility with planar microfabrication, suggest the design's wide application potential for telecommunications, infrared imaging, and biochemical sensing...