Affiliation: Massachusetts Institute of Technology
- Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodesXiaochen Sun
Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
Opt Lett 34:1198-200. 2009..These results indicate a promising future of tensile-strained Ge-on-Si for electrically pumped, monolithically integrated light emitters on Si...