Xiaochen Sun

Summary

Affiliation: Massachusetts Institute of Technology
Country: USA

Publications

  1. ncbi Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
    Xiaochen Sun
    Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
    Opt Lett 34:1198-200. 2009

Detail Information

Publications1

  1. ncbi Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
    Xiaochen Sun
    Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
    Opt Lett 34:1198-200. 2009
    ..These results indicate a promising future of tensile-strained Ge-on-Si for electrically pumped, monolithically integrated light emitters on Si...