Jifeng Liu

Summary

Affiliation: Massachusetts Institute of Technology
Country: USA

Publications

  1. ncbi request reprint Direct-gap optical gain of Ge on Si at room temperature
    Jifeng Liu
    Department of Materials Science and Engineering, Microphotonics Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
    Opt Lett 34:1738-40. 2009
  2. doi request reprint Ge-on-Si laser operating at room temperature
    Jifeng Liu
    MIT Microphotonics Center, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
    Opt Lett 35:679-81. 2010
  3. ncbi request reprint Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
    Xiaochen Sun
    Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
    Opt Lett 34:1198-200. 2009

Collaborators

  • Xiaochen Sun
  • Jurgen Michel
  • Lionel C Kimerling

Detail Information

Publications3

  1. ncbi request reprint Direct-gap optical gain of Ge on Si at room temperature
    Jifeng Liu
    Department of Materials Science and Engineering, Microphotonics Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
    Opt Lett 34:1738-40. 2009
    ..This experimental result confirms that the band-engineered Ge on Si is a promising gain medium for monolithic lasers on Si...
  2. doi request reprint Ge-on-Si laser operating at room temperature
    Jifeng Liu
    MIT Microphotonics Center, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
    Opt Lett 35:679-81. 2010
    ..The emission exhibited a gain spectrum of 1590-1610 nm, line narrowing and polarization evolution from a mixed TE/TM to predominantly TE with increasing gain, and a clear threshold behavior...
  3. ncbi request reprint Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
    Xiaochen Sun
    Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
    Opt Lett 34:1198-200. 2009
    ..These results indicate a promising future of tensile-strained Ge-on-Si for electrically pumped, monolithically integrated light emitters on Si...