M W Geis

Summary

Affiliation: Massachusetts Institute of Technology
Country: USA

Publications

  1. ncbi request reprint Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response
    M W Geis
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 9108, USA
    Opt Express 17:5193-204. 2009
  2. doi request reprint 30 to 50 ns liquid-crystal optical switches
    M W Geis
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 9108, USA
    Opt Express 18:18886-93. 2010
  3. ncbi request reprint CMOS-compatible dual-output silicon modulator for analog signal processing
    S J Spector
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420, USA
    Opt Express 16:11027-31. 2008

Collaborators

Detail Information

Publications3

  1. ncbi request reprint Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response
    M W Geis
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 9108, USA
    Opt Express 17:5193-204. 2009
    ..However, the high bandwidth, high quantum efficiency, low leakage current, and potentially high fabrication yields, make these devices very competitive when compared to other detector technologies...
  2. doi request reprint 30 to 50 ns liquid-crystal optical switches
    M W Geis
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 9108, USA
    Opt Express 18:18886-93. 2010
    ..The minimum transition time at temperatures a few degrees below the nematic-isotropic temperature are 32, 32, and 44 ns and delay times are 44, 25 and 8 ns for 5CB, 5OCB, and PCH5 respectively...
  3. ncbi request reprint CMOS-compatible dual-output silicon modulator for analog signal processing
    S J Spector
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420, USA
    Opt Express 16:11027-31. 2008
    ..cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance...