Guangyu Liu

Summary

Affiliation: Lehigh University
Country: USA

Publications

  1. ncbi Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
    Guangyu Liu
    Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
    Nanoscale Res Lett 6:342. 2011
  2. ncbi Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
    Hongping Zhao
    Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, USA
    Opt Express 19:A991-A1007. 2011

Collaborators

  • Hongping Zhao
  • Jonathan D Poplawsky
  • Volkmar Dierolf
  • Jing Zhang
  • Nelson Tansu

Detail Information

Publications2

  1. ncbi Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
    Guangyu Liu
    Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
    Nanoscale Res Lett 6:342. 2011
    ....
  2. ncbi Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
    Hongping Zhao
    Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, USA
    Opt Express 19:A991-A1007. 2011
    ..The optimization of both radiative efficiency and current injection efficiency in InGaN QWs LEDs are required for achieving high IQE devices emitting in the green spectral regime and longer...