Stuart S P Parkin

Summary

Affiliation: IBM Research
Country: USA

Publications

  1. ncbi Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
    Stuart S P Parkin
    IBM Research Division, IBM Almaden Research Center, IBM Infineon MRAM Development Alliance, 650 Harry Road, San Jose, California 95120, USA
    Nat Mater 3:862-7. 2004
  2. ncbi Suppression of ionic liquid gate-induced metallization of SrTiO3(001) by oxygen
    Mingyang Li
    IBM Almaden Research Center, San Jose, California, United States
    Nano Lett 13:4675-8. 2013
  3. doi Crystal-facet-dependent metallization in electrolyte-gated rutile TiO2 single crystals
    Thomas D Schladt
    IBM Almaden Research Center, San Jose, California 95120, United States
    ACS Nano 7:8074-81. 2013
  4. ncbi Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide
    Justin S Brockman
    1 IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120 6099, USA 2 Department of Applied Physics, Stanford University, 348 Via Pueblo, Stanford, California 94305, USA
    Nat Nanotechnol 9:453-8. 2014
  5. ncbi Discrete Domain Wall Positioning Due to Pinning in Current Driven Motion along Nanowires
    Xin Jiang
    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
    Nano Lett 11:96-100. 2011
  6. ncbi Dynamics of magnetic domain walls under their own inertia
    Luc Thomas
    IBM Almaden Research Center, 650 Harry Road, San Jose, CA, USA
    Science 330:1810-3. 2010
  7. ncbi Chiral spin torque arising from proximity-induced magnetization
    Kwang Su Ryu
    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA
    Nat Commun 5:3910. 2014
  8. doi Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique
    Wei Han
    IBM Almaden Research Center, San Jose, California 95120, USA
    Nat Commun 4:2134. 2013
  9. doi Suppression of metal-insulator transition in VO2 by electric field-induced oxygen vacancy formation
    Jaewoo Jeong
    IBM Almaden Research Center, San Jose, CA 95120, USA
    Science 339:1402-5. 2013
  10. doi Enhanced stochasticity of domain wall motion in magnetic racetracks due to dynamic pinning
    Xin Jiang
    IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120, USA
    Nat Commun 1:25. 2010

Collaborators

  • Xin Jiang
  • Mingyang Li
  • Luc Thomas
  • Mahesh G Samant
  • Thomas D Schladt
  • See Hun Yang
  • Wei Han
  • Jaewoo Jeong
  • Tanja Graf
  • Li Gao
  • Rai Moriya
  • Justin S Brockman
  • Kwang Su Ryu
  • Ivan Knez
  • Charles T Rettner
  • Charles Rettner
  • Brian Hughes
  • Rui Rui Du
  • Lingjie Du
  • Kevin P Roche
  • Gerard Sullivan
  • Nagaphani Aetukuri
  • Susanne Stemmer
  • Adam Kajdos
  • Andrea Fantini
  • Nagaphani B Aetukuri
  • Masamitsu Hayashi
  • Bastiaan Bergman
  • Philip M Rice
  • Teya Topuria

Detail Information

Publications13

  1. ncbi Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
    Stuart S P Parkin
    IBM Research Division, IBM Almaden Research Center, IBM Infineon MRAM Development Alliance, 650 Harry Road, San Jose, California 95120, USA
    Nat Mater 3:862-7. 2004
    ..Such high values of spin polarization and TMR in readily manufactureable and highly thermally stable devices (up to 400 degrees C) will accelerate the development of new families of spintronic devices...
  2. ncbi Suppression of ionic liquid gate-induced metallization of SrTiO3(001) by oxygen
    Mingyang Li
    IBM Almaden Research Center, San Jose, California, United States
    Nano Lett 13:4675-8. 2013
    ..The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced carrier annihilation. ..
  3. doi Crystal-facet-dependent metallization in electrolyte-gated rutile TiO2 single crystals
    Thomas D Schladt
    IBM Almaden Research Center, San Jose, California 95120, United States
    ACS Nano 7:8074-81. 2013
    ..These effects take place at even relatively modest gate voltages. ..
  4. ncbi Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide
    Justin S Brockman
    1 IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120 6099, USA 2 Department of Applied Physics, Stanford University, 348 Via Pueblo, Stanford, California 94305, USA
    Nat Nanotechnol 9:453-8. 2014
    ..We show that these incubation times can be accounted for by purely thermal effects and that intrinsic electronic-switching mechanisms may only be revealed using larger electric fields at even shorter timescales. ..
  5. ncbi Discrete Domain Wall Positioning Due to Pinning in Current Driven Motion along Nanowires
    Xin Jiang
    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
    Nano Lett 11:96-100. 2011
    ..This results from DW relaxation after the end of the current pulse into local energy minima, likely derived from imperfections in the nanowire...
  6. ncbi Dynamics of magnetic domain walls under their own inertia
    Luc Thomas
    IBM Almaden Research Center, 650 Harry Road, San Jose, CA, USA
    Science 330:1810-3. 2010
    ..Thus, independent of its inertia, a domain wall can be accurately positioned using properly timed current pulses...
  7. ncbi Chiral spin torque arising from proximity-induced magnetization
    Kwang Su Ryu
    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA
    Nat Commun 5:3910. 2014
    ..High domain velocities are found where there are large proximity-induced magnetizations in the interfaced metal layers. ..
  8. doi Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique
    Wei Han
    IBM Almaden Research Center, San Jose, California 95120, USA
    Nat Commun 4:2134. 2013
    ..Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material...
  9. doi Suppression of metal-insulator transition in VO2 by electric field-induced oxygen vacancy formation
    Jaewoo Jeong
    IBM Almaden Research Center, San Jose, CA 95120, USA
    Science 339:1402-5. 2013
    ..This mechanism should be taken into account in the interpretation of ionic liquid gating experiments...
  10. doi Enhanced stochasticity of domain wall motion in magnetic racetracks due to dynamic pinning
    Xin Jiang
    IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120, USA
    Nat Commun 1:25. 2010
    ..As a result, the DW periodically releases energy and thereby becomes more susceptible to pinning by local imperfections in the racetrack...
  11. ncbi Observation of edge transport in the disordered regime of topologically insulating InAs/GaSb quantum wells
    Ivan Knez
    IBM Research Almaden, San Jose, California 95120, USA
    Phys Rev Lett 112:026602. 2014
    ..Both quantized and self-averaged transport show resilience to magnetic fields, and are temperature independent for temperatures between 20 mK and 1 K...
  12. ncbi Role of percolation in the conductance of electrolyte-gated SrTiO3
    Mingyang Li
    IBM Almaden Research Center, San Jose, California, USA
    Phys Rev Lett 109:196803. 2012
    ..We postulate that this derives from nonpercolative transport due to inhomogeneous electric fields from imperfectly ordered ions at the electrolyte-oxide interface...
  13. ncbi Increased Tunneling Magnetoresistance Using Normally bcc CoFe Alloy Electrodes Made Amorphous without Glass Forming Additives
    Li Gao
    IBM Research Division, Almaden Research Center, San Jose, California 95120, USA and Department of Applied Physics, Stanford University, Stanford, California 94305, USA
    Phys Rev Lett 102:247205. 2009
    ..Indeed, x-ray emission spectroscopy shows a significant increase in the Fe, but not the Co, 3d density of states at the Fermi energy for thin amorphous CoFe layers...