Shu Jen Han

Summary

Affiliation: IBM Research
Country: USA

Publications

  1. doi request reprint Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory
    Shu Jen Han
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    ACS Nano 6:5220-6. 2012
  2. ncbi request reprint High-frequency graphene voltage amplifier
    Shu Jen Han
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
    Nano Lett 11:3690-3. 2011
  3. doi request reprint Carbon nanotube complementary wrap-gate transistors
    Aaron D Franklin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 13:2490-5. 2013
  4. doi request reprint Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics
    Qing Cao
    IBM T J Watson Research Centre, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 8:180-6. 2013
  5. ncbi request reprint Evaluation of field-effect mobility and contact resistance of transistors that use solution-processed single-walled carbon nanotubes
    Qing Cao
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, United States
    ACS Nano 6:6471-7. 2012
  6. ncbi request reprint Wafer-scale graphene integrated circuit
    Yu Ming Lin
    IBM Thomas J Watson Research Center, Yorktown Heights, NY 10598, USA
    Science 332:1294-7. 2011
  7. doi request reprint Graphene radio frequency receiver integrated circuit
    Shu Jen Han
    IBM T J Watson Research Center, 1101 Kitchawan Rd, Yorktown Heights, New York 10598, USA
    Nat Commun 5:3086. 2014
  8. doi request reprint High-density integration of carbon nanotubes via chemical self-assembly
    Hongsik Park
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 7:787-91. 2012
  9. doi request reprint Efficient and bright organic light-emitting diodes on single-layer graphene electrodes
    Ning Li
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    Nat Commun 4:2294. 2013
  10. ncbi request reprint Variability in Carbon Nanotube Transistors: Improving Device-to-Device Consistency
    Aaron D Franklin
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
    ACS Nano 6:1109-15. 2012

Collaborators

  • George S Tulevski
  • Qing Cao
  • Damon B Farmer
  • Phaedon Avouris
  • Yanqing Wu
  • Aaron D Franklin
  • Wilfried Haensch
  • Ning Li
  • Lynne Gignac
  • Chris M Breslin
  • Jerry Tersoff
  • James B Hannon
  • Hongsik Park
  • Yu Ming Lin
  • Tze Chiang Chen
  • Devendra K Sadana
  • Joshua T Smith
  • Hiroyuki Miyazoe
  • Satoshi Oida
  • Siyuranga O Koswatta
  • Mark S Lundstrom
  • Mathieu Luisier
  • Ali Afzali
  • H S Philip Wong
  • Hong Yu Chen
  • Davood Shahrjerdi
  • Alberto Valdes-Garcia
  • Inanc Meric
  • Alfred Grill
  • Keith A Jenkins
  • Christos Dimitrakopoulos
  • Yanning Sun

Detail Information

Publications13

  1. doi request reprint Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory
    Shu Jen Han
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    ACS Nano 6:5220-6. 2012
    ..In addition to showing intrinsic voltage gain (as high as 34) that is comparable to commercial semiconductor FETs with bandgaps, we also demonstrate high frequency AC voltage gain and S21 power gain from s-parameter measurements...
  2. ncbi request reprint High-frequency graphene voltage amplifier
    Shu Jen Han
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
    Nano Lett 11:3690-3. 2011
    ..The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date...
  3. doi request reprint Carbon nanotube complementary wrap-gate transistors
    Aaron D Franklin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 13:2490-5. 2013
    ....
  4. doi request reprint Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics
    Qing Cao
    IBM T J Watson Research Centre, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 8:180-6. 2013
    ....
  5. ncbi request reprint Evaluation of field-effect mobility and contact resistance of transistors that use solution-processed single-walled carbon nanotubes
    Qing Cao
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, United States
    ACS Nano 6:6471-7. 2012
    ..These results show promise for using solution-processed SWNTs for high-performance nanoelectronic devices...
  6. ncbi request reprint Wafer-scale graphene integrated circuit
    Yu Ming Lin
    IBM Thomas J Watson Research Center, Yorktown Heights, NY 10598, USA
    Science 332:1294-7. 2011
    ..These results open up possibilities of achieving practical graphene technology with more complex functionality and performance...
  7. doi request reprint Graphene radio frequency receiver integrated circuit
    Shu Jen Han
    IBM T J Watson Research Center, 1101 Kitchawan Rd, Yorktown Heights, New York 10598, USA
    Nat Commun 5:3086. 2014
    ..The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal. ..
  8. doi request reprint High-density integration of carbon nanotubes via chemical self-assembly
    Hongsik Park
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 7:787-91. 2012
    ..The ability to characterize such large distributions of nanotube devices is crucial for analysing transistor performance, yield and semiconducting nanotube purity...
  9. doi request reprint Efficient and bright organic light-emitting diodes on single-layer graphene electrodes
    Ning Li
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    Nat Commun 4:2294. 2013
    ..The power efficiency of white organic light-emitting diodes reaches 80 lm W(-1) at 3,000 cd m(-2), comparable to the most efficient lighting technologies...
  10. ncbi request reprint Variability in Carbon Nanotube Transistors: Improving Device-to-Device Consistency
    Aaron D Franklin
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
    ACS Nano 6:1109-15. 2012
    ..These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle...
  11. doi request reprint Single-walled carbon nanotubes for high-performance electronics
    Qing Cao
    IBM T J Watson Research Center, Yorktown Heights, NY 10598, USA
    Nanoscale 5:8852-63. 2013
    ..A concluding discussion provides some perspectives on future challenges and research opportunities. ..
  12. ncbi request reprint Three-terminal graphene negative differential resistance devices
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    ACS Nano 6:2610-6. 2012
    ....
  13. doi request reprint Sub-10 nm carbon nanotube transistor
    Aaron D Franklin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 12:758-62. 2012
    ..The superior low-voltage performance of the sub-10 nm CNT transistor proves the viability of nanotubes for consideration in future aggressively scaled transistor technologies...