Shu Jen Han

Summary

Affiliation: IBM Research
Country: USA

Publications

  1. doi Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory
    Shu Jen Han
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    ACS Nano 6:5220-6. 2012
  2. ncbi High-frequency graphene voltage amplifier
    Shu Jen Han
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
    Nano Lett 11:3690-3. 2011
  3. doi Carbon nanotube complementary wrap-gate transistors
    Aaron D Franklin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 13:2490-5. 2013
  4. doi Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics
    Qing Cao
    IBM T J Watson Research Centre, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 8:180-6. 2013
  5. ncbi Evaluation of field-effect mobility and contact resistance of transistors that use solution-processed single-walled carbon nanotubes
    Qing Cao
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, United States
    ACS Nano 6:6471-7. 2012
  6. ncbi Wafer-scale graphene integrated circuit
    Yu Ming Lin
    IBM Thomas J Watson Research Center, Yorktown Heights, NY 10598, USA
    Science 332:1294-7. 2011
  7. doi Graphene radio frequency receiver integrated circuit
    Shu Jen Han
    IBM T J Watson Research Center, 1101 Kitchawan Rd, Yorktown Heights, New York 10598, USA
    Nat Commun 5:3086. 2014
  8. doi High-density integration of carbon nanotubes via chemical self-assembly
    Hongsik Park
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 7:787-91. 2012
  9. ncbi Surface selective one-step fabrication of carbon nanotube thin films with high density
    Jose M Lobez
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
    ACS Nano 8:4954-60. 2014
  10. doi Efficient and bright organic light-emitting diodes on single-layer graphene electrodes
    Ning Li
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    Nat Commun 4:2294. 2013

Collaborators

  • George S Tulevski
  • Damon B Farmer
  • Qing Cao
  • Phaedon Avouris
  • Yanqing Wu
  • Aaron D Franklin
  • Wilfried Haensch
  • James B Hannon
  • Jose M Lobez
  • Ning Li
  • Ali Afzali
  • Jerry Tersoff
  • Lynne Gignac
  • Chris M Breslin
  • Hongsik Park
  • Yu Ming Lin
  • Satoshi Oida
  • Devendra K Sadana
  • Joshua T Smith
  • Hiroyuki Miyazoe
  • Tze Chiang Chen
  • Siyuranga O Koswatta
  • Mark S Lundstrom
  • Davood Shahrjerdi
  • Mathieu Luisier
  • Hong Yu Chen
  • H S Philip Wong
  • Yanning Sun
  • Inanc Meric
  • Christos Dimitrakopoulos
  • Alfred Grill
  • Keith A Jenkins
  • Alberto Valdes-Garcia

Detail Information

Publications14

  1. doi Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory
    Shu Jen Han
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    ACS Nano 6:5220-6. 2012
    ..In addition to showing intrinsic voltage gain (as high as 34) that is comparable to commercial semiconductor FETs with bandgaps, we also demonstrate high frequency AC voltage gain and S21 power gain from s-parameter measurements...
  2. ncbi High-frequency graphene voltage amplifier
    Shu Jen Han
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
    Nano Lett 11:3690-3. 2011
    ..The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date...
  3. doi Carbon nanotube complementary wrap-gate transistors
    Aaron D Franklin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 13:2490-5. 2013
    ....
  4. doi Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics
    Qing Cao
    IBM T J Watson Research Centre, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 8:180-6. 2013
    ....
  5. ncbi Evaluation of field-effect mobility and contact resistance of transistors that use solution-processed single-walled carbon nanotubes
    Qing Cao
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, United States
    ACS Nano 6:6471-7. 2012
    ..These results show promise for using solution-processed SWNTs for high-performance nanoelectronic devices...
  6. ncbi Wafer-scale graphene integrated circuit
    Yu Ming Lin
    IBM Thomas J Watson Research Center, Yorktown Heights, NY 10598, USA
    Science 332:1294-7. 2011
    ..These results open up possibilities of achieving practical graphene technology with more complex functionality and performance...
  7. doi Graphene radio frequency receiver integrated circuit
    Shu Jen Han
    IBM T J Watson Research Center, 1101 Kitchawan Rd, Yorktown Heights, New York 10598, USA
    Nat Commun 5:3086. 2014
    ..The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal. ..
  8. doi High-density integration of carbon nanotubes via chemical self-assembly
    Hongsik Park
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 7:787-91. 2012
    ..The ability to characterize such large distributions of nanotube devices is crucial for analysing transistor performance, yield and semiconducting nanotube purity...
  9. ncbi Surface selective one-step fabrication of carbon nanotube thin films with high density
    Jose M Lobez
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
    ACS Nano 8:4954-60. 2014
    ..The thin films obtained with this approach are used for thin-film transistor (TFT) fabrication, and their electrical characterization is described. ..
  10. doi Efficient and bright organic light-emitting diodes on single-layer graphene electrodes
    Ning Li
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    Nat Commun 4:2294. 2013
    ..The power efficiency of white organic light-emitting diodes reaches 80 lm W(-1) at 3,000 cd m(-2), comparable to the most efficient lighting technologies...
  11. ncbi Variability in Carbon Nanotube Transistors: Improving Device-to-Device Consistency
    Aaron D Franklin
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
    ACS Nano 6:1109-15. 2012
    ..These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle...
  12. doi Single-walled carbon nanotubes for high-performance electronics
    Qing Cao
    IBM T J Watson Research Center, Yorktown Heights, NY 10598, USA
    Nanoscale 5:8852-63. 2013
    ..A concluding discussion provides some perspectives on future challenges and research opportunities. ..
  13. ncbi Three-terminal graphene negative differential resistance devices
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    ACS Nano 6:2610-6. 2012
    ....
  14. doi Sub-10 nm carbon nanotube transistor
    Aaron D Franklin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 12:758-62. 2012
    ..The superior low-voltage performance of the sub-10 nm CNT transistor proves the viability of nanotubes for consideration in future aggressively scaled transistor technologies...