Damon B Farmer

Summary

Affiliation: IBM Research
Country: USA

Publications

  1. doi request reprint Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors
    Damon B Farmer
    IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 9:4474-8. 2009
  2. doi request reprint State-of-the-art graphene high-frequency electronics
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, United States
    Nano Lett 12:3062-7. 2012
  3. doi request reprint Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography
    Guanxiong Liu
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    ACS Nano 6:6786-92. 2012
  4. doi request reprint Chemical doping and electron-hole conduction asymmetry in graphene devices
    Damon B Farmer
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 9:388-92. 2009
  5. doi request reprint Reducing contact resistance in graphene devices through contact area patterning
    Joshua T Smith
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, United States
    ACS Nano 7:3661-7. 2013
  6. doi request reprint Operation of graphene transistors at gigahertz frequencies
    Yu Ming Lin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598
    Nano Lett 9:422-6. 2009
  7. ncbi request reprint Three-terminal graphene negative differential resistance devices
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    ACS Nano 6:2610-6. 2012
  8. ncbi request reprint High-frequency, scaled graphene transistors on diamond-like carbon
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nature 472:74-8. 2011
  9. doi request reprint Carbon nanotube complementary wrap-gate transistors
    Aaron D Franklin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 13:2490-5. 2013
  10. ncbi request reprint Wafer-scale graphene integrated circuit
    Yu Ming Lin
    IBM Thomas J Watson Research Center, Yorktown Heights, NY 10598, USA
    Science 332:1294-7. 2011

Collaborators

Detail Information

Publications13

  1. doi request reprint Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors
    Damon B Farmer
    IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 9:4474-8. 2009
    ..Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices...
  2. doi request reprint State-of-the-art graphene high-frequency electronics
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, United States
    Nano Lett 12:3062-7. 2012
    ..We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification...
  3. doi request reprint Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography
    Guanxiong Liu
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    ACS Nano 6:6786-92. 2012
    ..Our process combines both top-down and self-assembly steps to fabricate long graphene nanoribbon arrays with low defect counts. These are the narrowest nanoribbon arrays of epitaxial graphene on SiC fabricated to date...
  4. doi request reprint Chemical doping and electron-hole conduction asymmetry in graphene devices
    Damon B Farmer
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 9:388-92. 2009
    ..Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points...
  5. doi request reprint Reducing contact resistance in graphene devices through contact area patterning
    Joshua T Smith
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, United States
    ACS Nano 7:3661-7. 2013
    ..This simple approach provides a reliable and reproducible means of lowering contact resistance in graphene devices to bolster performance. Importantly, this enhancement requires no additional processing steps...
  6. doi request reprint Operation of graphene transistors at gigahertz frequencies
    Yu Ming Lin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598
    Nano Lett 9:422-6. 2009
    ..The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications...
  7. ncbi request reprint Three-terminal graphene negative differential resistance devices
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    ACS Nano 6:2610-6. 2012
    ....
  8. ncbi request reprint High-frequency, scaled graphene transistors on diamond-like carbon
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nature 472:74-8. 2011
    ..f. performance of our graphene devices exhibits little temperature dependence down to 4.3 K, providing a much larger operation window than is available for conventional devices...
  9. doi request reprint Carbon nanotube complementary wrap-gate transistors
    Aaron D Franklin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 13:2490-5. 2013
    ....
  10. ncbi request reprint Wafer-scale graphene integrated circuit
    Yu Ming Lin
    IBM Thomas J Watson Research Center, Yorktown Heights, NY 10598, USA
    Science 332:1294-7. 2011
    ..These results open up possibilities of achieving practical graphene technology with more complex functionality and performance...
  11. doi request reprint Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
    Wenjuan Zhu
    1 IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA 2
    Nat Commun 5:3087. 2014
    ..Continual engineering efforts on improving the sample quality are needed for its potential applications. ..
  12. ncbi request reprint Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature
    Fengnian Xia
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598
    Nano Lett 10:715-8. 2010
    ..2 and 1.3 V nm(-1), respectively. This demonstration reveals the great potential of bilayer graphene in applications such as digital electronics, pseudospintronics, terahertz technology, and infrared nanophotonics...
  13. ncbi request reprint Efficient narrow-band light emission from a single carbon nanotube p-n diode
    Thomas Mueller
    1 IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA 2 These authors contributed equally to this work
    Nat Nanotechnol 5:27-31. 2010
    ..Moreover, the electroluminescent spectra are significantly narrower ( approximately 35 meV) than in previous studies, allowing the identification of emission from free and localized excitons...