Phaedon Avouris

Summary

Affiliation: IBM Research
Country: USA

Publications

  1. doi request reprint Carbon-based electronics
    Phaedon Avouris
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 2:605-15. 2007
  2. ncbi request reprint Charge transfer induced polarity switching in carbon nanotube transistors
    Christian Klinke
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 5:555-8. 2005
  3. ncbi request reprint Self-assembly of 1-D organic semiconductor nanostructures
    Thuc Quyen Nguyen
    Department of Chemistry and Biochemistry, University of California, Santa Barbara, CA 93106, USA
    Phys Chem Chem Phys 9:1515-32. 2007
  4. ncbi request reprint Imaging of the Schottky barriers and charge depletion in carbon nanotube transistors
    Marcus Freitag
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    Nano Lett 7:2037-42. 2007
  5. doi request reprint Chemical doping and electron-hole conduction asymmetry in graphene devices
    Damon B Farmer
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 9:388-92. 2009
  6. doi request reprint State-of-the-art graphene high-frequency electronics
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, United States
    Nano Lett 12:3062-7. 2012
  7. doi request reprint Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography
    Guanxiong Liu
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    ACS Nano 6:6786-92. 2012
  8. doi request reprint Phonon populations and electrical power dissipation in carbon nanotube transistors
    Mathias Steiner
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 4:320-4. 2009
  9. doi request reprint Operation of graphene transistors at gigahertz frequencies
    Yu Ming Lin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598
    Nano Lett 9:422-6. 2009
  10. doi request reprint Quantum behavior of graphene transistors near the scaling limit
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 12:1417-23. 2012

Collaborators

Detail Information

Publications39

  1. doi request reprint Carbon-based electronics
    Phaedon Avouris
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 2:605-15. 2007
    ..Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material...
  2. ncbi request reprint Charge transfer induced polarity switching in carbon nanotube transistors
    Christian Klinke
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 5:555-8. 2005
    ..We also demonstrated the flexibility of modulating the threshold voltage (Vth) of a CNTFET by engineering various charge-accepting and -donating groups in the same molecule...
  3. ncbi request reprint Self-assembly of 1-D organic semiconductor nanostructures
    Thuc Quyen Nguyen
    Department of Chemistry and Biochemistry, University of California, Santa Barbara, CA 93106, USA
    Phys Chem Chem Phys 9:1515-32. 2007
    ..The 1-D stacks and their aggregates can be easily transferred by solution casting, thus allowing a simple preparation of molecular nanostructures on different surfaces...
  4. ncbi request reprint Imaging of the Schottky barriers and charge depletion in carbon nanotube transistors
    Marcus Freitag
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
    Nano Lett 7:2037-42. 2007
    ..Internal photoemission from the metal contact to the carbon nanotube and thermally assisted tunneling through the Schottky barrier are observed in addition to the photocurrent that is generated inside the carbon nanotube...
  5. doi request reprint Chemical doping and electron-hole conduction asymmetry in graphene devices
    Damon B Farmer
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 9:388-92. 2009
    ..Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points...
  6. doi request reprint State-of-the-art graphene high-frequency electronics
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, United States
    Nano Lett 12:3062-7. 2012
    ..We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification...
  7. doi request reprint Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography
    Guanxiong Liu
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    ACS Nano 6:6786-92. 2012
    ..Our process combines both top-down and self-assembly steps to fabricate long graphene nanoribbon arrays with low defect counts. These are the narrowest nanoribbon arrays of epitaxial graphene on SiC fabricated to date...
  8. doi request reprint Phonon populations and electrical power dissipation in carbon nanotube transistors
    Mathias Steiner
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 4:320-4. 2009
    ..Most importantly, inclusion of scattering by substrate polar phonons is needed to fully account for the observed electronic transport behaviour...
  9. doi request reprint Operation of graphene transistors at gigahertz frequencies
    Yu Ming Lin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598
    Nano Lett 9:422-6. 2009
    ..The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications...
  10. doi request reprint Quantum behavior of graphene transistors near the scaling limit
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 12:1417-23. 2012
    ....
  11. doi request reprint The polarized carbon nanotube thin film LED
    Megumi Kinoshita
    IBM TJ Watson Research Center, Yorktown Heights, NY 10598, USA
    Opt Express 18:25738-45. 2010
    ..The device emits infrared light that is polarized along the long axes of the carbon nanotubes that form the aligned film...
  12. doi request reprint The origins and limits of metal-graphene junction resistance
    Fengnian Xia
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 6:179-84. 2011
    ..As the temperature increases, this carrier transport becomes less ballistic, resulting in a considerable reduction in efficiency...
  13. doi request reprint The effects of substrate phonon mode scattering on transport in carbon nanotubes
    Vasili Perebeinos
    IBM Research Division, T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 9:312-6. 2009
    ..We predict additional experimental signatures of the SPP mechanism in dependence of the mobility on density, temperature, tube diameter, and CNT-substrate separation...
  14. doi request reprint Infrared spectroscopy of wafer-scale graphene
    Hugen Yan
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, United States
    ACS Nano 5:9854-60. 2011
    ....
  15. doi request reprint Controllable p-n junction formation in monolayer graphene using electrostatic substrate engineering
    Hsin Ying Chiu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, United States
    Nano Lett 10:4634-9. 2010
    ..The approach is based on the electronic modification not of the graphene but of the substrate and produces a well-behaved, sharp junction whose position and height can be controlled...
  16. doi request reprint Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors
    Damon B Farmer
    IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 9:4474-8. 2009
    ..Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices...
  17. doi request reprint A microcavity-controlled, current-driven, on-chip nanotube emitter at infrared wavelengths
    Fengnian Xia
    Department of Nanometer Scale Science and Technology, IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 3:609-13. 2008
    ..The maximum enhancement of the radiative rate is estimated to be 4. We also show that both the optically and electrically excited luminescence of single-walled nanotubes involve the same E11 excitonic transition...
  18. ncbi request reprint Electrically excited infrared emission from InN nanowire transistors
    Jia Chen
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA chenjia us ibm com
    Nano Lett 7:2276-80. 2007
    ....
  19. ncbi request reprint Mobility in semiconducting carbon nanotubes at finite carrier density
    Vasili Perebeinos
    IBM Research Division, T J Watson Research Center, Yorktown Heights, New York 10598, USA vperebe us ibm cim
    Nano Lett 6:205-8. 2006
    ..At a critical density, rho(c) approximately 0.35-0.5 electrons/nm, the drift velocity saturates at around one-third of the Fermi velocity. Above rho(c), the velocity increases with field strength with no apparent saturation...
  20. doi request reprint Increased responsivity of suspended graphene photodetectors
    Marcus Freitag
    IBM TJ Watson Research Center, Yorktown Heights, New York 10598, United States
    Nano Lett 13:1644-8. 2013
    ..Our work documents this mechanism of energy exchange between graphene and its environment, and it points to the importance of dielectric engineering for future improved graphene photodetectors...
  21. ncbi request reprint Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes
    Yu Ming Lin
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 6:930-6. 2006
    ..These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation phenomenon...
  22. doi request reprint Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays
    Michael Engel
    IBM T J Watson Research Center, Yorktown Heights, NY 10598, USA
    ACS Nano 2:2445-52. 2008
    ..Moreover, they deliver strong photocurrents and are also both photo- and electroluminescent...
  23. ncbi request reprint Tunable infrared plasmonic devices using graphene/insulator stacks
    Hugen Yan
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nat Nanotechnol 7:330-4. 2012
    ..5% of electromagnetic radiation at frequencies below 1.2 THz. This work could lead to the development of transparent mid- and far-infrared photonic devices such as detectors, modulators and three-dimensional metamaterial systems...
  24. doi request reprint Structure and electronic transport in graphene wrinkles
    Wenjuan Zhu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, United States
    Nano Lett 12:3431-6. 2012
    ..These results highlight the coupling between morphology and electronic properties, which has important practical implications for large-scale high-speed graphene electronics...
  25. ncbi request reprint Three-terminal graphene negative differential resistance devices
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    ACS Nano 6:2610-6. 2012
    ....
  26. ncbi request reprint The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors
    Zhihong Chen
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 5:1497-502. 2005
    ..Our study permits identification of the desired combination of tube diameter and type of metal that provides the optimum performance of a CNFET...
  27. ncbi request reprint High-frequency, scaled graphene transistors on diamond-like carbon
    Yanqing Wu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nature 472:74-8. 2011
    ..f. performance of our graphene devices exhibits little temperature dependence down to 4.3 K, providing a much larger operation window than is available for conventional devices...
  28. doi request reprint Photocurrent in graphene harnessed by tunable intrinsic plasmons
    Marcus Freitag
    IBM Research Division, IBM TJ Watson Research Center, Yorktown Heights, New York, New York 10598, USA
    Nat Commun 4:1951. 2013
    ..Our work provides a path to light-sensitive and frequency-selective photodetectors based on graphene's plasmonic excitations...
  29. ncbi request reprint Efficient narrow-band light emission from a single carbon nanotube p-n diode
    Thomas Mueller
    1 IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA 2 These authors contributed equally to this work
    Nat Nanotechnol 5:27-31. 2010
    ..Moreover, the electroluminescent spectra are significantly narrower ( approximately 35 meV) than in previous studies, allowing the identification of emission from free and localized excitons...
  30. doi request reprint Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
    Wenjuan Zhu
    1 IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA 2
    Nat Commun 5:3087. 2014
    ..Continual engineering efforts on improving the sample quality are needed for its potential applications. ..
  31. doi request reprint Infrared spectroscopy of tunable Dirac terahertz magneto-plasmons in graphene
    Hugen Yan
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, United States
    Nano Lett 12:3766-71. 2012
    ..Our work not only opens an avenue for the investigation of the properties of Dirac magnetoplasmons but also supports the great potential of graphene for tunable terahertz magneto-optical devices...
  32. ncbi request reprint Wafer-scale graphene integrated circuit
    Yu Ming Lin
    IBM Thomas J Watson Research Center, Yorktown Heights, NY 10598, USA
    Science 332:1294-7. 2011
    ..These results open up possibilities of achieving practical graphene technology with more complex functionality and performance...
  33. ncbi request reprint Radiative lifetime of excitons in carbon nanotubes
    Vasili Perebeinos
    IBM Research Division, T J Watson Research Center, Yorktown Heights, NY 10598, USA
    Nano Lett 5:2495-9. 2005
    ..We calculate the diameter-dependent energy splittings between singlet and triplet excitons of different symmetries and the resulting dependence of radiative lifetime on temperature and tube diameter...
  34. ncbi request reprint Electrically excited, localized infrared emission from single carbon nanotubes
    Marcus Freitag
    IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 6:1425-33. 2006
    ..Random defects due to local charging are also observed...
  35. ncbi request reprint Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature
    Fengnian Xia
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598
    Nano Lett 10:715-8. 2010
    ..2 and 1.3 V nm(-1), respectively. This demonstration reveals the great potential of bilayer graphene in applications such as digital electronics, pseudospintronics, terahertz technology, and infrared nanophotonics...
  36. ncbi request reprint Photocurrent imaging and efficient photon detection in a graphene transistor
    Fengnian Xia
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 9:1039-44. 2009
    ..When light is focused on the p-n junctions, an impressive external responsivity of 0.001 A/W is achieved, given that only a single layer of atoms are involved in photon detection...
  37. ncbi request reprint Raman and photocurrent imaging of electrical stress-induced p-n junctions in graphene
    Gayathri Rao
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    ACS Nano 5:5848-54. 2011
    ..The spatial location of the identified potential steps coincides with the position where a photocurrent is generated, confirming the creation of p-n junctions...
  38. ncbi request reprint Silicon nitride gate dielectrics and band gap engineering in graphene layers
    Wenjuan Zhu
    IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nano Lett 10:3572-6. 2010
    ..Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band gap or band overlap in the different layers...
  39. doi request reprint Computational study of exciton generation in suspended carbon nanotube transistors
    Siyuranga O Koswatta
    Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906, USA
    Nano Lett 8:1596-601. 2008
    ....