Solomon Assefa

Summary

Affiliation: IBM Research
Country: USA

Publications

  1. ncbi request reprint Silicon-nitride surface passivation of submicrometer silicon waveguides for low-power optical switches
    Joris Van Campenhout
    IBM Research, T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Lett 34:1534-6. 2009
  2. doi request reprint CMOS-integrated high-speed MSM germanium waveguide photodetector
    Solomon Assefa
    IBM TJ Watson Research Center, Yorktown Heights, NY 10536, USA
    Opt Express 18:4986-99. 2010
  3. ncbi request reprint High-order dispersion in photonic crystal waveguides
    Solomon Assefa
    IBM TJ Watson Research Center, Yorktown Heights, NY 10536, USA
    Opt Express 15:17562-9. 2007
  4. doi request reprint Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer
    Mackenzie A Van Camp
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA
    Opt Express 20:28009-16. 2012
  5. doi request reprint High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier
    Huapu Pan
    IBM Thomas J Watson Research Center, Yorktown Heights, NY 10598, USA
    Opt Express 20:18145-55. 2012
  6. doi request reprint Integrated NiSi waveguide heaters for CMOS-compatible silicon thermo-optic devices
    Joris Van Campenhout
    IBM Research, T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Lett 35:1013-5. 2010
  7. doi request reprint Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks
    Joris Van Campenhout
    IBM T J Watson Research Center, Yorktown Heights, NY 10598, USA
    Opt Express 17:24020-9. 2009
  8. doi request reprint Non-blocking 4x4 electro-optic silicon switch for on-chip photonic networks
    Min Yang
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Express 19:47-54. 2011
  9. doi request reprint Drive-noise-tolerant broadband silicon electro-optic switch
    Joris Van Campenhout
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Express 19:11568-77. 2011
  10. ncbi request reprint Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
    Solomon Assefa
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nature 464:80-4. 2010

Collaborators

  • Fengnian Xia
  • Huapu Pan
  • Ying Zhang
  • Xiaoping Liu
  • Joris Van Campenhout
  • William M J Green
  • Yurii A Vlasov
  • Mackenzie A Van Camp
  • Min Yang
  • Steven M Shank
  • Tymon Barwicz
  • Philip M Rice
  • Douglas M Gill
  • Teya Topuria
  • Jeffrey A Kash
  • Clint L Schow
  • Benjamin G Lee
  • Fuad E Doany
  • Christopher V Jahnes
  • Richard M Osgood

Detail Information

Publications10

  1. ncbi request reprint Silicon-nitride surface passivation of submicrometer silicon waveguides for low-power optical switches
    Joris Van Campenhout
    IBM Research, T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Lett 34:1534-6. 2009
    ..Carrier lifetimes of up to 70 ns were obtained in waveguides passivated with a 45-nm-thick Si(3)N(4) coating. Such surface passivation is essential for low-power operation of optical switches based on carrier injection...
  2. doi request reprint CMOS-integrated high-speed MSM germanium waveguide photodetector
    Solomon Assefa
    IBM TJ Watson Research Center, Yorktown Heights, NY 10536, USA
    Opt Express 18:4986-99. 2010
    ..Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal...
  3. ncbi request reprint High-order dispersion in photonic crystal waveguides
    Solomon Assefa
    IBM TJ Watson Research Center, Yorktown Heights, NY 10536, USA
    Opt Express 15:17562-9. 2007
    ..The results emphasize the importance of taking into consideration the effect of TOD and FOD on pulse broadening in the slow-light regime...
  4. doi request reprint Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer
    Mackenzie A Van Camp
    IBM T J Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA
    Opt Express 20:28009-16. 2012
    ....
  5. doi request reprint High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier
    Huapu Pan
    IBM Thomas J Watson Research Center, Yorktown Heights, NY 10598, USA
    Opt Express 20:18145-55. 2012
    ..4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm...
  6. doi request reprint Integrated NiSi waveguide heaters for CMOS-compatible silicon thermo-optic devices
    Joris Van Campenhout
    IBM Research, T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Lett 35:1013-5. 2010
    ..The time constant of the thermo-optic response was less than 2.8 mus. Simulations suggest that a further reduction in the power consumption P(pi) is feasible...
  7. doi request reprint Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks
    Joris Van Campenhout
    IBM T J Watson Research Center, Yorktown Heights, NY 10598, USA
    Opt Express 17:24020-9. 2009
    ..The utilization of standard CMOS metallization results in a low drive voltage (approximately 1 V) and a record-low V(pi)L (approximately 0.06 V x mm). The wide optical bandwidth is maintained for temperature variations up to 30 K...
  8. doi request reprint Non-blocking 4x4 electro-optic silicon switch for on-chip photonic networks
    Min Yang
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Express 19:47-54. 2011
    ..High-speed 40 Gbps data transmission experiments verify optical data integrity for all input-output channels...
  9. doi request reprint Drive-noise-tolerant broadband silicon electro-optic switch
    Joris Van Campenhout
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Opt Express 19:11568-77. 2011
    ..45 dB) than that of the single-stage switch. The noise-tolerant, low-crosstalk switch can thus play a key role within CMOS-integrated reconfigurable optical networks operating under noisy on-chip conditions...
  10. ncbi request reprint Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
    Solomon Assefa
    IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA
    Nature 464:80-4. 2010
    ..Monolithic integration of such a device into computer chips might enable applications beyond computer optical interconnects-in telecommunications, secure quantum key distribution, and subthreshold ultralow-power transistors...