Z Y Zhang

Summary

Affiliation: University of Sheffield
Country: UK

Publications

  1. ncbi 1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser
    Z Y Zhang
    EPSRC National Centre for III V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom
    Sci Rep 2:477. 2012
  2. ncbi A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap
    Z Y Zhang
    Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
    Nanotechnology 20:055204. 2009
  3. ncbi Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes
    Z Y Zhang
    Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, UK
    Opt Express 18:7055-63. 2010
  4. ncbi Quantum dot selective area intermixing for broadband light sources
    K J Zhou
    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nano Science and Technology, Broad Lane, Sheffield, UK
    Opt Express 20:26950-7. 2012

Collaborators

  • Q Wang
  • K J Zhou
  • Z H Lu
  • H Y Liu
  • Q Jiang
  • K Kennedy
  • S J Matcher
  • S M Chen
  • R A Hogg

Detail Information

Publications4

  1. ncbi 1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser
    Z Y Zhang
    EPSRC National Centre for III V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom
    Sci Rep 2:477. 2012
    ..With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices...
  2. ncbi A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap
    Z Y Zhang
    Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
    Nanotechnology 20:055204. 2009
    ....
  3. ncbi Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes
    Z Y Zhang
    Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, UK
    Opt Express 18:7055-63. 2010
    ..A selective area intermixed QD-SLED is demonstrated, and with optimized differential intermixing, such structures should allow ultra-broadband sources to be realized...
  4. ncbi Quantum dot selective area intermixing for broadband light sources
    K J Zhou
    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nano Science and Technology, Broad Lane, Sheffield, UK
    Opt Express 20:26950-7. 2012
    ..This corresponds to an axial resolution of 2.4μm. Such a small predicted axial resolution is highly desirable in optical coherence tomography system and other coherence-based systems applications...