Efthymios Rouvalis

Summary

Affiliation: University College London
Country: UK

Publications

  1. ncbi request reprint High-speed photodiodes for InP-based photonic integrated circuits
    E Rouvalis
    Department of Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE, UK
    Opt Express 20:9172-7. 2012
  2. doi request reprint Optoelectronic detection of millimetre-wave signals with travelling-wave uni-travelling carrier photodiodes
    Efthymios Rouvalis
    Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, United Kingdom
    Opt Express 19:2079-84. 2011
  3. doi request reprint InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy
    Michele Natrella
    Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, UK
    Opt Express 20:19279-88. 2012
  4. doi request reprint Traveling-wave Uni-Traveling Carrier photodiodes for continuous wave THz generation
    Efthymios Rouvalis
    UCL Electronic and Electrical Engineering, Torrington Place, London WC1E 7JE, UK
    Opt Express 18:11105-10. 2010

Collaborators

  • Michele Natrella
  • Alwyn J Seeds
  • Cyril C Renaud
  • Huiyun Liu
  • Chin Pang Liu

Detail Information

Publications4

  1. ncbi request reprint High-speed photodiodes for InP-based photonic integrated circuits
    E Rouvalis
    Department of Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE, UK
    Opt Express 20:9172-7. 2012
    ..The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz)...
  2. doi request reprint Optoelectronic detection of millimetre-wave signals with travelling-wave uni-travelling carrier photodiodes
    Efthymios Rouvalis
    Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, United Kingdom
    Opt Express 19:2079-84. 2011
    ..A wide dynamic range of more than 42 dB was measured, limited by the maximum available millimetre-wave power...
  3. doi request reprint InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy
    Michele Natrella
    Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, UK
    Opt Express 20:19279-88. 2012
    ....
  4. doi request reprint Traveling-wave Uni-Traveling Carrier photodiodes for continuous wave THz generation
    Efthymios Rouvalis
    UCL Electronic and Electrical Engineering, Torrington Place, London WC1E 7JE, UK
    Opt Express 18:11105-10. 2010
    ..Record levels of Terahertz figure of merit (PTHz/Popt2 in W(-1)) were achieved ranging from 1 W(-1) at 110 GHz to 0.0024 W(-1) at 914 GHz...