L Lever

Summary

Affiliation: University of Leeds
Country: UK

Publications

  1. ncbi Adiabatic mode coupling between SiGe photonic devices and SOI waveguides
    L Lever
    Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK
    Opt Express 20:29500-6. 2012
  2. ncbi Terahertz ambipolar dual-wavelength quantum cascade laser
    L Lever
    Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
    Opt Express 17:19926-32. 2009
  3. ncbi Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon
    L Lever
    Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
    Opt Lett 36:4158-60. 2011

Collaborators

Detail Information

Publications3

  1. ncbi Adiabatic mode coupling between SiGe photonic devices and SOI waveguides
    L Lever
    Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK
    Opt Express 20:29500-6. 2012
    ..We identify optimised taper profiles, which, for 1-μm-wide waveguides, allow the length of an adiabatic taper to be reduced from 250 μm for a simple linear profile to 40 μm for the optimised structure...
  2. ncbi Terahertz ambipolar dual-wavelength quantum cascade laser
    L Lever
    Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
    Opt Express 17:19926-32. 2009
    ..3 THz; in reverse bias, it emits at 4 THz. The corresponding threshold current densities are 490 A/cm(2) and 330 A/cm(2), respectively, with maximum operating temperatures of 98K and 120 K...
  3. ncbi Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon
    L Lever
    Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
    Opt Lett 36:4158-60. 2011
    ..We grew 9 nm-thick Ge quantum wells on a relaxed Si0.22Ge0.78 buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range 1290-1315 nm...