Lianping Hou

Summary

Affiliation: University of Glasgow
Country: UK

Publications

  1. doi request reprint 160 GHz harmonic mode-locked AlGaInAs 1.55 μm strained quantum-well compound-cavity laser
    Lianping Hou
    School of Engineering, University of Glasgow, Glasgow G12 8LT, UK
    Opt Lett 35:3991-3. 2010
  2. doi request reprint Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers
    Lianping Hou
    School of Engineering, University of Glasgow, Glasgow, UK
    Opt Lett 36:966-8. 2011
  3. doi request reprint Narrow linewidth laterally coupled 1.55 μm AlGaInAs/InP distributed feedback lasers integrated with a curved tapered semiconductor optical amplifier
    Lianping Hou
    School of Engineering, University of Glasgow, Glasgow, UK
    Opt Lett 37:4525-7. 2012
  4. doi request reprint High frequency optoelectronic oscillators based on the optical feedback of semiconductor mode-locked laser diodes
    Mohsin Haji
    School of Engineering, University of Glasgow, Glasgow, G12 8LT, UK
    Opt Express 20:3268-74. 2012
  5. ncbi request reprint 490 fs pulse generation from a passive C-band AlGaInAs/InP quantum well mode-locked laser
    Lianping Hou
    School of Engineering, University of Glasgow, Glasgow, G12 8LT UK
    Opt Lett 37:773-5. 2012
  6. doi request reprint Mode locking at terahertz frequencies using a distributed Bragg reflector laser with a sampled grating
    Lianping Hou
    School of Engineering, University of Glasgow, Glasgow, UK
    Opt Lett 38:1113-5. 2013
  7. doi request reprint CWDM source based on AlGaInAs/InP monolithically integrated DFB laser array
    Lianping Hou
    School of Engineering, University of Glasgow, Glasgow, G12 8LT, United Kingdom
    Opt Lett 36:4188-90. 2011

Collaborators

  • Mohsin Haji
  • John H Marsh
  • John M Arnold
  • Jehan Akbar
  • Anthony E Kelly
  • Charles N Ironside

Detail Information

Publications7

  1. doi request reprint 160 GHz harmonic mode-locked AlGaInAs 1.55 μm strained quantum-well compound-cavity laser
    Lianping Hou
    School of Engineering, University of Glasgow, Glasgow G12 8LT, UK
    Opt Lett 35:3991-3. 2010
    ..55 μm AlGaInAs strained quantum well material. Gaussian pulses were generated at a 161.8 GHz repetition rate with a pulse duration of 1.67 ps and a time-bandwidth product of 0.81...
  2. doi request reprint Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers
    Lianping Hou
    School of Engineering, University of Glasgow, Glasgow, UK
    Opt Lett 36:966-8. 2011
    ..55 μm laser with a low divergence angle (12.7°×26.3°), timing jitter of 1.2 ps (10 kHz-100 MHz), and a radio frequency linewidth of 25 kHz...
  3. doi request reprint Narrow linewidth laterally coupled 1.55 μm AlGaInAs/InP distributed feedback lasers integrated with a curved tapered semiconductor optical amplifier
    Lianping Hou
    School of Engineering, University of Glasgow, Glasgow, UK
    Opt Lett 37:4525-7. 2012
    ....
  4. doi request reprint High frequency optoelectronic oscillators based on the optical feedback of semiconductor mode-locked laser diodes
    Mohsin Haji
    School of Engineering, University of Glasgow, Glasgow, G12 8LT, UK
    Opt Express 20:3268-74. 2012
    ....
  5. ncbi request reprint 490 fs pulse generation from a passive C-band AlGaInAs/InP quantum well mode-locked laser
    Lianping Hou
    School of Engineering, University of Glasgow, Glasgow, G12 8LT UK
    Opt Lett 37:773-5. 2012
    ..The mode-locking range is relatively large and the ultranarrow pulse width is very stable over a broad range of driving conditions...
  6. doi request reprint Mode locking at terahertz frequencies using a distributed Bragg reflector laser with a sampled grating
    Lianping Hou
    School of Engineering, University of Glasgow, Glasgow, UK
    Opt Lett 38:1113-5. 2013
    ..Being low cost and compact sources of THz radiation, these lasers will open up many applications, including systems for high-speed optical communication and THz imaging...
  7. doi request reprint CWDM source based on AlGaInAs/InP monolithically integrated DFB laser array
    Lianping Hou
    School of Engineering, University of Glasgow, Glasgow, G12 8LT, United Kingdom
    Opt Lett 36:4188-90. 2011
    ..The epitaxial structure was designed to produce a far-field pattern as small as 21.2°×25.1°, producing a coupling efficiency with an angled-end single-mode fiber at twice that of a conventional device design...