F Y Gardes

Summary

Affiliation: University of Surrey
Country: UK

Publications

  1. doi High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode
    F Y Gardes
    Advanced Technology Institute, University of Surrey Guildford, Surrey, UK
    Opt Express 17:21986-91. 2009
  2. doi 40 Gb/s silicon photonics modulator for TE and TM polarisations
    F Y Gardes
    Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
    Opt Express 19:11804-14. 2011
  3. doi High contrast 40Gbit/s optical modulation in silicon
    D J Thomson
    Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
    Opt Express 19:11507-16. 2011
  4. doi High speed silicon optical modulator with self aligned fabrication process
    D J Thomson
    Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
    Opt Express 18:19064-9. 2010
  5. doi Wavelength division (de)multiplexing based on dispersive self-imaging
    Y Hu
    Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
    Opt Lett 36:4488-90. 2011

Collaborators

  • A Brimont
  • D J Thomson
  • Y Hu
  • G T Reed
  • J M Fedeli
  • G Mashanovich
  • G Z Mashanovich
  • P Grosse
  • E D Finlayson
  • M Fournier
  • R M Jenkins
  • F Milesi

Detail Information

Publications5

  1. doi High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode
    F Y Gardes
    Advanced Technology Institute, University of Surrey Guildford, Surrey, UK
    Opt Express 17:21986-91. 2009
    ..The device exhibits an electrical small signal bandwidth of 19 GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications...
  2. doi 40 Gb/s silicon photonics modulator for TE and TM polarisations
    F Y Gardes
    Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
    Opt Express 19:11804-14. 2011
    ..5 dB for TE and TM polarisations is demonstrated. This technology is not only compatible with conventional complementary MOS (CMOS) processing, but is also intended to simplify and improve the reliability of, the fabrication process...
  3. doi High contrast 40Gbit/s optical modulation in silicon
    D J Thomson
    Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
    Opt Express 19:11507-16. 2011
    ..5dB respectively. The efficiency and optical loss of the phase shifter is 2.7V.cm and 4dB/mm (or 4.5dB/mm including waveguide loss) respectively...
  4. doi High speed silicon optical modulator with self aligned fabrication process
    D J Thomson
    Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
    Opt Express 18:19064-9. 2010
    ..Experimental results are presented from an initial fabrication run, which has demonstrated a 6 dB modulation depth at 10 Gbit/s from a 3.5 m long device...
  5. doi Wavelength division (de)multiplexing based on dispersive self-imaging
    Y Hu
    Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
    Opt Lett 36:4488-90. 2011
    ..0 dB. The potential for higher channel counts and smaller channel wavelength spacing was also predicted. This type of WDM is easy to design and fabricate. The underlying concept is applicable to all planar waveguide platforms...