F Y Gardes

Summary

Affiliation: University of Surrey
Country: UK

Publications

  1. ncbi High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode
    F Y Gardes
    Advanced Technology Institute, University of Surrey Guildford, Surrey, UK
    Opt Express 17:21986-91. 2009
  2. ncbi 40 Gb/s silicon photonics modulator for TE and TM polarisations
    F Y Gardes
    Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
    Opt Express 19:11804-14. 2011
  3. ncbi High contrast 40Gbit/s optical modulation in silicon
    D J Thomson
    Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
    Opt Express 19:11507-16. 2011
  4. ncbi High speed silicon optical modulator with self aligned fabrication process
    D J Thomson
    Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
    Opt Express 18:19064-9. 2010
  5. ncbi Wavelength division (de)multiplexing based on dispersive self-imaging
    Y Hu
    Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
    Opt Lett 36:4488-90. 2011

Collaborators

  • A Brimont
  • D J Thomson
  • Y Hu
  • G T Reed
  • J M Fedeli
  • G Z Mashanovich
  • G Mashanovich
  • R M Jenkins
  • M Fournier
  • P Grosse
  • E D Finlayson
  • F Milesi

Detail Information

Publications5

  1. ncbi High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode
    F Y Gardes
    Advanced Technology Institute, University of Surrey Guildford, Surrey, UK
    Opt Express 17:21986-91. 2009
    ..The device exhibits an electrical small signal bandwidth of 19 GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications...
  2. ncbi 40 Gb/s silicon photonics modulator for TE and TM polarisations
    F Y Gardes
    Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
    Opt Express 19:11804-14. 2011
    ..5 dB for TE and TM polarisations is demonstrated. This technology is not only compatible with conventional complementary MOS (CMOS) processing, but is also intended to simplify and improve the reliability of, the fabrication process...
  3. ncbi High contrast 40Gbit/s optical modulation in silicon
    D J Thomson
    Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
    Opt Express 19:11507-16. 2011
    ..5dB respectively. The efficiency and optical loss of the phase shifter is 2.7V.cm and 4dB/mm (or 4.5dB/mm including waveguide loss) respectively...
  4. ncbi High speed silicon optical modulator with self aligned fabrication process
    D J Thomson
    Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
    Opt Express 18:19064-9. 2010
    ..Experimental results are presented from an initial fabrication run, which has demonstrated a 6 dB modulation depth at 10 Gbit/s from a 3.5 m long device...
  5. ncbi Wavelength division (de)multiplexing based on dispersive self-imaging
    Y Hu
    Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
    Opt Lett 36:4488-90. 2011
    ..0 dB. The potential for higher channel counts and smaller channel wavelength spacing was also predicted. This type of WDM is easy to design and fabricate. The underlying concept is applicable to all planar waveguide platforms...