Faten Adel Ismail Chaqmaqchee

Summary

Affiliation: University of Essex
Country: UK

Publications

  1. pmc GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation
    Faten Adel Ismail Chaqmaqchee
    School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK
    Nanoscale Res Lett 6:104. 2011
  2. pmc Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications
    Faten Adel Ismael Chaqmaqchee
    School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK
    Nanoscale Res Lett 7:526. 2012
  3. pmc Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation
    Faten Adel Ismael Chaqmaqchee
    School of Computer Science and Electronic Engineering, University of Essex, Colchester, CO43SQ, UK
    Nanoscale Res Lett 7:525. 2012

Detail Information

Publications3

  1. pmc GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation
    Faten Adel Ismail Chaqmaqchee
    School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK
    Nanoscale Res Lett 6:104. 2011
    ..Cavity resonance and gain peak curves have been calculated at different temperatures. Good agreement between experimental and theoretical results has been obtained...
  2. pmc Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications
    Faten Adel Ismael Chaqmaqchee
    School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK
    Nanoscale Res Lett 7:526. 2012
    ..The highest gain is obtained for the 1.3-μm wavelength when an electric field in excess of 2 kV/cm is applied along the layers of the device...
  3. pmc Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation
    Faten Adel Ismael Chaqmaqchee
    School of Computer Science and Electronic Engineering, University of Essex, Colchester, CO43SQ, UK
    Nanoscale Res Lett 7:525. 2012
    ..The device is characterised through I-V-L and by spectral photoluminescence, electroluminescence and electro-photoluminescence measurements. An amplification of about 25 dB is observed at applied voltages of around V = 88 V...