Naci Balkan

Summary

Affiliation: University of Essex
Country: UK

Publications

  1. pmc Overshoot mechanism in transient excitation of THz and Gunn oscillations in wide-bandgap semiconductors
    Ernesto Momox
    School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ, UK
    Nanoscale Res Lett 7:647. 2012
  2. pmc The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys
    Omer Donmez
    Science Faculty, Department of Physics, Istanbul University, Vezneciler, Istanbul 34134, Turkey
    Nanoscale Res Lett 7:490. 2012
  3. pmc Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications
    Faten Adel Ismael Chaqmaqchee
    School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK
    Nanoscale Res Lett 7:526. 2012
  4. pmc Dilute nitride and GaAs n-i-p-i solar cells
    Simone Mazzucato
    School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK
    Nanoscale Res Lett 7:631. 2012
  5. pmc Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation
    Faten Adel Ismael Chaqmaqchee
    School of Computer Science and Electronic Engineering, University of Essex, Colchester, CO43SQ, UK
    Nanoscale Res Lett 7:525. 2012
  6. pmc Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures
    Hagir M Khalil
    School of Computer Science and Electronic Engineering, University of Essex, Colchester, CO4 3SQ, UK
    Nanoscale Res Lett 7:539. 2012
  7. pmc Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity
    Naci Balkan
    Department of Computer Science and Electronic Engineering, University of Essex, Colchester, CO4 3SQ, UK
    Nanoscale Res Lett 7:574. 2012
  8. pmc Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells
    Hagir Mohammed Khalil
    School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ, Colchester, UK
    Nanoscale Res Lett 6:191. 2011
  9. pmc GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation
    Faten Adel Ismail Chaqmaqchee
    School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK
    Nanoscale Res Lett 6:104. 2011

Collaborators

  • Faten Adel Ismael Chaqmaqchee
  • Simone Mazzucato
  • Omer Donmez
  • Ernesto Momox
  • Hagir M Khalil
  • Mustafa Gunes
  • Yun Sun
  • Faten Adel Ismail Chaqmaqchee
  • Hagir Mohammed Khalil
  • Richard Ketlhwaafetse
  • Joel Salmi
  • Mircea Guina
  • Cetin M Arikan
  • Russell Gwilliam
  • Andy Smith
  • Ben Royall
  • Nick Zakhleniuk
  • Janne Puustinen
  • Ayşe Erol
  • William J Schaff
  • Jose Maria Ulloa Herrero
  • Benjamin Royall
  • Andreas Amann
  • Markku Sopanen
  • Mark Hopkinson
  • Murat Oduncuoglu
  • Maxime Hugues

Detail Information

Publications9

  1. pmc Overshoot mechanism in transient excitation of THz and Gunn oscillations in wide-bandgap semiconductors
    Ernesto Momox
    School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ, UK
    Nanoscale Res Lett 7:647. 2012
    ..3 to 0.7 THz. In spite of the fact that the known criterion of a Gunn domain mode n0L > (n0L)0 was satisfied, no Gunn domains were observed. The explanation of this phenomenon is given...
  2. pmc The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys
    Omer Donmez
    Science Faculty, Department of Physics, Istanbul University, Vezneciler, Istanbul 34134, Turkey
    Nanoscale Res Lett 7:490. 2012
    ....
  3. pmc Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications
    Faten Adel Ismael Chaqmaqchee
    School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK
    Nanoscale Res Lett 7:526. 2012
    ..The highest gain is obtained for the 1.3-μm wavelength when an electric field in excess of 2 kV/cm is applied along the layers of the device...
  4. pmc Dilute nitride and GaAs n-i-p-i solar cells
    Simone Mazzucato
    School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK
    Nanoscale Res Lett 7:631. 2012
    ..Performance of the devices is discussed with interest in the n-i-p-i structure as a possible design for the GaInP/GaAs/GaInNAs tandem solar cell...
  5. pmc Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation
    Faten Adel Ismael Chaqmaqchee
    School of Computer Science and Electronic Engineering, University of Essex, Colchester, CO43SQ, UK
    Nanoscale Res Lett 7:525. 2012
    ..The device is characterised through I-V-L and by spectral photoluminescence, electroluminescence and electro-photoluminescence measurements. An amplification of about 25 dB is observed at applied voltages of around V = 88 V...
  6. pmc Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures
    Hagir M Khalil
    School of Computer Science and Electronic Engineering, University of Essex, Colchester, CO4 3SQ, UK
    Nanoscale Res Lett 7:539. 2012
    ..At high temperature, thermal escape from the wells becomes much more dominant and the steps smear out...
  7. pmc Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity
    Naci Balkan
    Department of Computer Science and Electronic Engineering, University of Essex, Colchester, CO4 3SQ, UK
    Nanoscale Res Lett 7:574. 2012
    ..Furthermore, Hall measurements in the Mg-doped material also indicate an activated behaviour with an acceptor binding energy of 108 ± 20 meV...
  8. pmc Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells
    Hagir Mohammed Khalil
    School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ, Colchester, UK
    Nanoscale Res Lett 6:191. 2011
    ..Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range...
  9. pmc GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation
    Faten Adel Ismail Chaqmaqchee
    School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK
    Nanoscale Res Lett 6:104. 2011
    ..Cavity resonance and gain peak curves have been calculated at different temperatures. Good agreement between experimental and theoretical results has been obtained...