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High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limitAndrew R J Marshall
Physics Department, Lancaster University, Lancaster, LA1 4YB, UK
Opt Express 19:23341-9. 2011..This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs...
