- Silicon-Germanium multi-quantum well photodetectors in the near infraredEfe Onaran
Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800, Turkey
Opt Express 20:7608-15. 2012..Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ~10 mA/cm² and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage...