Mongi Bouaicha

Summary

Affiliation: Centre de Biotechnologie de Sfax
Country: Tunisie

Publications

  1. pmc Effect of etching time on morphological, optical, and electronic properties of silicon nanowires
    Nesma Nafie
    Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l Energie, Technopole de Borj Cedria, BP 95, Hammam Lif, Tunis, 2050, Tunisia
    Nanoscale Res Lett 7:393. 2012
  2. pmc Structural, morphological, and optical properties of TiO2 thin films synthesized by the electro phoretic deposition technique
    Najla Ghrairi
    Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l Energie, Technopole de Borj Cedria, BP 95, Hammam Lif, Tunis, 2050, Tunisia
    Nanoscale Res Lett 7:357. 2012
  3. pmc The dual role of silver during silicon etching in HF solution
    Manel Abouda-Lachiheb
    Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l Energie, Technopole de Borj Cedria, BP 95, Hammam Lif, Tunis, 2050, Tunisia
    Nanoscale Res Lett 7:455. 2012

Collaborators

  • Nesma Nafie
  • Manel Abouda-Lachiheb
  • Najla Ghrairi
  • Manel Abouda Lachiheb

Detail Information

Publications3

  1. pmc Effect of etching time on morphological, optical, and electronic properties of silicon nanowires
    Nesma Nafie
    Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l Energie, Technopole de Borj Cedria, BP 95, Hammam Lif, Tunis, 2050, Tunisia
    Nanoscale Res Lett 7:393. 2012
    ..The latter technique was used to determine the effective diffusion length in SiNWs films. From these investigations, we deduce that the homogeneity of the SiNWs film plays a key role on the electronic properties...
  2. pmc Structural, morphological, and optical properties of TiO2 thin films synthesized by the electro phoretic deposition technique
    Najla Ghrairi
    Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l Energie, Technopole de Borj Cedria, BP 95, Hammam Lif, Tunis, 2050, Tunisia
    Nanoscale Res Lett 7:357. 2012
    ..5 illumination of the formed DSC, we obtain an open circuit voltage Voc = 628 mV and a short circuit current Isc = 22.6 μA, where the surface of the formed cell is 3.14 cm2...
  3. pmc The dual role of silver during silicon etching in HF solution
    Manel Abouda-Lachiheb
    Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l Energie, Technopole de Borj Cedria, BP 95, Hammam Lif, Tunis, 2050, Tunisia
    Nanoscale Res Lett 7:455. 2012
    ..Through our investigations, we tracked the silver particles that indicated which mechanism is involved. Characterizations of the prepared samples were made using a scanning electron microscope...